DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
DTC114ECA / DTC114ESA / DTC114EM NPN Digital Transistors (Built-in Resistors) 01-Mar-2012 Rev.C Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. Only the on/off conditions need to be set for operation, making device design easy. EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Limits (DTC1114E□) Parameter Symbol M E UA CA SA Unit Collector-Base Voltage V CC 50 V Input voltage V IN -10~40 V IO 50 Output current IC(MAX) 100 mA Power dissipation P D 100 150 200 300 mW Junction & Storage temperature T J, TSTG 150, -55~150 °C DTC114EE (SOT-523) Addreviated symbol：24 DTC114EUA (SOT-323) Addreviated symbol：24 DTC114EM (SOT-723) Addreviated symbol：24 DTC114ECA (SOT-23) Addreviated symbol：24 DTC114ESA (TO-92S)
DTC114ECA / DTC114ESA / DTC114EM NPN Digital Transistors (Built-in Resistors) 01-Mar-2012 Rev.C Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Test Conditions VI(off) 0.5 - - V CC=5V, IO=100μA Input voltage VI(on) - - 3 V VO=0.3V, IO=10mA Output voltage V O(on) - - 0.3 V I O/II=10mA/0.5mA Input current I I - - 0.88 mA V I=5V Output current I O(off) - - 0.5 μA V CC=50V, VI=0 DC current gain G I 30 - - V O=5V, IO=5mA Input resistance R 1 7 10 13 K Ω Resistance ratio R 2/R1 0.8 1 1.2 Transition frequency f T - 250 - MHz VO=10V, IO=5mA, f=100MHz CHARACTERISTIC CURVES
DTC114ECA / DTC114ESA / DTC114EM NPN Digital Transistors (Built-in Resistors) 01-Mar-2012 Rev.C Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES