DTC114E_11 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD DTC114E NPN SILICON TRANSISTOR w w w . u n i s o n i c . c o m . t w 1 of 3 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R206-047.H NPN DIGITAL TRANSISTOR (BUILT- IN BIAS RESISTORS) „ FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow negative input. „ EQUIVALENT CIRCUIT „ ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 DTC114EL-AE3-R DTC114EG-AE3-R SOT-23 G I O Tape Reel DTC114EL-AL3-R DTC114EG-AL3-R SOT-323 G I O Tape Reel DTC114EL-AN3-R DTC114EG-AN3-R SOT-523 G I O Tape Reel DTC114EL-T92-B DTC114EG-T92-B TO-92 G O I Tape Box DTC114EL-T92-K DTC114EG-T92-K TO-92 G O I Bulk DTC114EL-T92-R DTC114EG-T92-R TO-92 G O I Tape Reel DTC114EL-T9S-K DTC114EG-T9S-K TO-92SP G O I Bulk „ MARKING (FOR SOT-23/SOT-323/SOT-523 PACKAGE)

DTC114E NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2 of 3 www.unisonic.com.tw Q W - R 2 0 6 - 0 4 7 , H „ ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER SYMBOL RATINGS UNIT Supply Voltage V CC 50 V Input Voltage V IN -10 ~ +40 V Output Current I OUT 100 mA Power Dissipation SOT-23/SOT-323 PD 200 mW SOT-523 150 TO-92 625 TO-92SP 550 Junction Temperature T J +150 °C Storage Temperature T STG -55 ~ +150 °C Note: Absolute maximum ratings are those values be yond which the device coul d be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (TA=25°C, unless others specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Input Voltage VIN(OFF) V CC =5V, IOUT =100μA 0.5 V VIN(ON) V OUT =0.3V, IOUT =10mA 3 V Output Voltage V OUT(ON) I OUT/IIN =10mA/0.5mA 0.1 0.3 V Input Current I IN V IN=5V 0.88 mA Output Current I OUT(OFF) V CC =50V, VIN =0V 0.5 μA DC Current Gain h FE V OUT =5V, IOUT =5mA 30 Input Resistance R 1 7 10 13 K Ω Resistor Ratio R 2/R1 0.8 1 1.2 Transition Frequency f T V CE =10V, IE =−5mA, f=100MHz (Note) 250 MHz Note: Transition frequency of the device

DTC114E NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 3 of 3 www.unisonic.com.tw Q W - R 2 0 6 - 0 4 7 , H „ TYPICAL CHARACTERISTICS 100 0.5 0.2 0.1 0.5 2 5 10 20 50 100 1 TA= - 40°C 25°C 100°C VOUT=0.3V 0.1 Input Voltage vs. Output Current (ON Characteristics) 500 200 100 VOUT=5V Output Current, IOUT(mA) DC Current Gain vs. Output Current Output Current, IOUT(mA) 10m 500μ 200μ 100μ VCC=5V Output Current vs. Input Voltage (OFF characteristics) Input Voltage, VI(OFF) (V) 1000 500 200 100 lOUT/lIN=20 Output Voltage vs. Output Current Output Current, IOUT(mA) Input Voltage :VI(ON) V Output Current, IOUT(A) DC Current Gain, hFE Output Voltage, VOUT(ON) (mV) 2 5 10 20 50 100 1 0.2 0.5 2 5 10 20 50 100 1 0.1 0.2 50μ 10μ 20μ TA= 100°C 25°C -40°C 0.2 0.5 0.1 TA= 100°C 25°C -40°C TA= 100°C 25°C -40°C UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.