DTC114E FS | Alldatasheet

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NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.

  • Simplifies Circuit Design
  • Reduces Board Space and Component Count Bias Resistor Transistor SEMICO NDUCTOR TECH NICAL DATA DTC114E Absolute maximum ratings(Ta=25℃) Parameter Symbol Unit Supply voltage VCC V 0 5 Input voltage VIN V 0 4 ~ 0 1 - IO 0 5 Output current IC(MAX) 0 0 1 mA Power dissipation Pd 300 mW Junction temperature Tj 0 5 1 ℃ Storage temperature 0 5 1 ~ 5 5 - g t s T℃ Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions V (off) V 5 . 0 CC=5V ,IO=100µA Input voltage V (on) 3 V VO=0.3V ,IO=10 mA Output voltage VO(on) 0.3 V IO/II=10mA/0.5mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 µA VCC=50V, VI=0 DC current gain GI 30 VO=5V ,IO=5mA Input resistance R1 7 10 13 K Ω Resistance ratio R2/R1 2 . 1 1 8 . 0 Transition frequency fT 250 MHz V O=10V ,IO=5mA,f=100MHz Value IN GND OUT GND OUT IN 3 2010. 7. 22 1/2Revision No : 0 1 2 3 TO-92M DIM MILLIMETERS A B C D E F G

3.25 MAX

4.20 MAX

0.48 MAX

1.52 0.1 1.27 15.30 0.20 0.76

0.51 MAX

H J AF G D E E H J C K 0.25 K B 1. EMITTER(GND) 2. COLLECTOR(Output) 3. BASE(Input)

  1. 7. 22 2/2Revision No : 0 SEMICO NDUCTOR TECH NICAL DATA DTC114E