DTB201 FS | Alldatasheet

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Digital transistors (built-in resistors) 2011. 09. 06 1/3 SEMICONDUCTOR TECHNIC AL DATA DTB201 Revision No : 0 Equivalent circuit• IN GND (+) OUT GND (+) OUT SOT-23 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping K6 4.7 4.7 3000/Tape & Reel 10000/Tape & Reel We declare that the material of product compliance with RoHS requirements. Inverter, Interface, Driver Features •

  • Applications DTB201 DTB201 K6 4.7 4.7 Absolute maximum ratings (T a=25C) Limits Parameter Symbol Unit 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external in put resistors (see equivalent circuit). 2) The bias resisto rs consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy . VCC − 50 −500 200 150 −55 to +150 V VIN V mA mW IC PD Tj Tstg C C Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature − 30 to +10 Electrical characteristics(T a=25°C) Parameter Symbol VI(off) VI(on) VO(on) II IO(off) GI R2/R1 fT Min. − 3 3.29 0.8 − 0.1 4.7 200 − 0.5 − 0.3 − 1.8 − 0.5 6.11 1.2 V V CC=−5V, IO=−100µA VO=−0.3V, IO=−20mA IO/II=−50mA/−2 5mA VI=−5V VCC=−50V, VI=0V VO=−5V, IO=−50mA VCE=−10V, IE=50mA, f=100MHz V mA µA kΩ − − MHz Typ. Max. Unit Conditions Input voltage Output voltage Input current Output current Input resistance DC current gain Resistance ratio Transition frequency Characteristics of built-in tranasistor
  1. 09. 06 2/3 DTB201 Revision No : 0 Electrical characteristic curves INPUT VOLTAGE : VI (on) (V) OUTPUT CURRENT : IO (A) -100m -200m -500m -10 -20 -50 -100 VO= −0.3V -1m -0.5m -2m -5m -10m -20m -50m -100m -200m -500m Ta= −40 C 25 C 100 C Fig.1 Input voltage vs. output current INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : Io (A) -10m -1µ -2m -5m -1m -200µ -500µ -100µ -20µ -50µ -10µ -2µ -5µ VCC= −5V Fig.2 Output current vs. input voltage (OFF characteristics) Ta=100 C 25 C −40 C OUTPUT CURRENT : IO (A) DC CURRENT GAIN : GI 100 200 500 1k VO= −5V -1m -0.5m -2m -5m -10m -20m -50m -100m -200m -500m Ta=100 C 25 C −40 C Fig.3 DC current gain vs. output current OUTPUT CURRENT : IO (A) OUTPUT VOLTAGE : VO (on) (V) -1m -2m -5m -10m -20m -50m -100m -200m -500m -1m -0.5m -2m -5m -10m -20m -50m -100m -200m -500m lO/lI=20 Ta=100 C 25 C −40 C Fig.4 Output voltage vs. output current

NOTES: 1. DIMENSIONING AND T OLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. PIN 1 BASE

2 EMITTER

3 COLLECTOR

L A C B S H GV 1 2 mm inches 0 037 0 95 0 037 0 95 0 079 2 0 0 035 0 9 0 031 0 8 INCHES MILLIMETERSDIM A B C D G H J K L S V MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MIN 2.80 1.20 0.89 0.37 1.78 0.013 0.085 0.35 0.89 2.10 0.45 MAX 3.04 1.40 1.11 0.50 2.04 0.100 0.177 0.69 1.02 2.64 0.60 2011. 09. 06 3/3 DTB201 Revision No : 0