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x Epitaxial Planar Die Construction x Untrl Small Surface Mount Package x Built-In Biasing Resistors Absolute maximum ratings @ 25к Symbol Parameter Min Typ Max Unit IC Collector current --- VIN Input voltage -40 --- Pd Power dissipation --- 150 --- mW Tj Junction temperature --- 150 --- ć Tstg Storage temperature -55 --- 150 ć Electrical Characteristics @ 25к Symbol Parameter Min Typ Max Unit II Input current (V I=-5V) ---- --- -0.88 mA IO(off) Output current (V CC=-50V, VI=0) --- ----- 0.5 ­A GI DC current gain (VO=-5V, IO=-5mA) 30 --- --- R1 Input resistance 7 10 13 K¡ R2/R1 Resistance ratio 0.8 1.0 0.2 fT Transition frequency (V2=-10V, I2=5mA, f=100MHz) --- 250 --- MHz 10 V VCC --- VSupply Voltage -50 --- mA-50 -100 VI(on) Input voltage (VCC=-5V, IO=-100­A) VO(on) Output voltage (IO=-10mA,Ii=-0.5mA) --- --- -0.3 V Marking:14

  • Epoxy meets UL 94 V-0 flammability rating
  • Moisure Sensitivity Level 1 SOT-523 DTA114EE 2012-0 WILLAS ELECTRONIC CORP. PNP Digital Transistor Dimensions in inches and (millimeters) .043(1.10) .035(0.90) .069(1.75) .057(1.45) .004(0.10)MIN. .008(0.20) .004(0.10) .035(0.90) .014(0.35) .004(0.10)MAX. .067(1.70) .059(1.50) .035(0.90) .028(0.70) .014(0.35) .010(0.25)

-0.1 -1 -10 -100 -0.1 -10 -100 -0.01 -0.1 -10 -0.1 -1 -10 -100 100 1000 0 25 50 75 100 125 150 100 150 200 250 300 350 400 048 1 2 1 6 2 0 -1 -10 -100 -10 -100 -1000 ON Characteristics Ta=25℃ Ta=100℃ VO=-0.3V -3-0.3 -30 OUTPUT CURRENT IO (mA) INPUT VOLTAGE VI(ON) (V) Typical Characteristics OFF Characteristics Ta=100℃ Ta=25℃ -0.3 -0.03 VCC=-5V OUTPUT CURRENT IO (mA) INPUT VOLTAGE VI(OFF) (V) -0.3 -30 Ta=25℃ Ta=100℃ VO=-5V 300 -3-0.3 -30 GI —— IO OUTPUT CURRENT IO (mA) DC CURRENT GAIN GI DTA114EE PD —— Ta POWER DISSIPATION PD (mW) AMBIENT TEMPERATURE Ta ( )℃ f=1MHz Ta=25℃ CO —— VR OUTPUT CAPACITANCE CO (pF) REVERSE BIAS VOLTAGE VR (V) -300 -30 -30-3 VO(ON) —— IO Ta=25℃ Ta=100℃ IO/II=20 OUTPUT VOLTAGE VO(ON) (mV) OUTPUT CURRENT IO (mA) 2012-0 WILLAS ELECTRONIC CORP. DTA114EE PNP Digital Transistor