DTA114E ONSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
Semiconductor Components Industries, LLC, 2000 May, 2000 – Rev. 0
1 Publication Order Number:
/C0068/C0084/C0065/C0049/C0049/C0052/C0069 /C0083/C0069/C0082/C0073/C0069/C0083 Preferred Devices /C0066/C0105/C0097/C0115 /C0082/C0101/C0115/C0105/C0115/C0116/C0111/C0114 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO–92 package which is designed for through hole applications. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Collector Current IC 100 mAdc Total Power Dissipation @ T A = 25°C (1.) Derate above 25°C PD 350 2.81 mW mW/ °C THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Ambient (surface mounted) R θJA 357 °C/W Operating and Storage Temperature Range TJ, Tstg –55 to +150 Maximum Temperature for Soldering Purposes, Time in Solder Bath TL 260 Sec DEVICE MARKING AND RESISTOR VALUES Device Marking R1 (K) R2 (K) Shipping DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z 4.7 1.0 2.2 4.7 4.7 1.0 2.2 4.7 5000/Box 1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint. http://onsemi.com CASE 29 TO–92 (TO–226) STYLE 1 Preferred devices are recommended choices for future use and best overall value. PNP SILICON BIAS RESISTOR TRANSISTOR 2 3 COLLECTOR BASE EMITTER
http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Base Cutoff Current (VCB = 50 V, IE = 0) ICBO — — 100 nAdc Collector–Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO — — 500 nAdc Emitter–Base Cutoff Current DTA114E (VEB = 6.0 V, IC = 0) DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z IEBO — 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 mAdc Collector–Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 — — Vdc Collector–Emitter Breakdown Voltage (2.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 — — Vdc ON CHARACTERISTICS (2.) DC Current Gain DTA114E (VCE = 10 V, IC = 5.0 mA) DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z hFE 35 160 160 3.0 8.0 100 140 140 250 250 5.0 140 Collector–Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) DTA144E/DTA114Y (IC = 10 mA, IE = 0.3 mA) DTB113E/DTA143E (IC = 10 mA, IB = 5 mA) DTA123E (IC = 10 mA, IB = 1 mA) DTA114T/DTA143T/ (IC = 10 mA, IB = 1 mA) DTA143Z/DTA124E VCE(sat) — — 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ ) DTA114E DTA124E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z CC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ ) DTA144E VOL 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 Vdc 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
http://onsemi.com ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ ) DTA114T DTA113T DTA144E DTA114Y DTA143Z CC = 5.0 V, VB = 0.05 V, RL = 1.0 kΩ ) DTB113E (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ ) DTA114T DTA143T DTA123E DTA143E VOH 4.9 — — Vdc Input Resistor DTA114E DTA124E DTA144E DTA114Y DTA114T DTA143T DTB113E DTA123E DTA143E DTA143Z R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 4.7 1.0 2.2 4.7 4.7 28.6 61.1 6.1 1.3 2.9 6.1 6.1 kΩ Resistor Ratio DTA114E/DTA124E/DTA144E DTA114Y DTA114T/DTA143T DTB113E/DTA123E/DTA143E DTA143Z R 1/R2 0.8 0.17 0.8 0.055 1.0 0.21 1.0 0.1 1.2 0.25 1.2 0.185
http://onsemi.com PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR STYLE 6: PIN 1. GATE 2. SOURCE & SUBSTRATE 3. DRAIN STYLE 11: PIN 1. ANODE 2. CATHODE & ANODE 3. CATHODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 7: PIN 1. SOURCE 2. DRAIN 3. GATE STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2 STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 8: PIN 1. DRAIN 2. GATE 3. SOURCE & SUBSTRATE STYLE 13: PIN 1. ANODE 1 2. GATE 3. CATHODE 2 STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 9: PIN 1. BASE 1 2. EMITTER 3. BASE 2 STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 5: PIN 1. DRAIN 2. SOURCE 3. GATE STYLE 10: PIN 1. CATHODE 2. GATE 3. ANODE STYLE 15: PIN 1. ANODE 1 2. CATHODE 3. ANODE 2 R A P J L B K G H SECTION X–X CV D N N XX SEATING PLANE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 N 0.080 0.105 2.04 2.66 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION CENTRAL/SOUTH AMERICA: Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST) Email: ONlit–spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support Phone : 303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001–800–4422–3781 Email: ONlit–asia@hibbertco.com JAPAN : ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone : 81–3–5740–2745 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. DTA114E/D Thermal Clad is a trademark of the Bergquist Company NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada N. American Technical Support: 800–282–9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor – European Support German Phone : (+1) 303–308–7140 (M–F 1:00pm to 5:00pm Munich Time) Email: ONlit–german@hibbertco.com French Phone : (+1) 303–308–7141 (M–F 1:00pm to 5:00pm Toulouse Time) Email: ONlit–french@hibbertco.com English Phone: (+1) 303–308–7142 (M–F 12:00pm to 5:00pm UK Time) Email: ONlit@hibbertco.com EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781 *Available from Germany, France, Italy, England, Ireland