DTA114E FS | Alldatasheet
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Technical content
Absolute maximum ratings(Ta=25℃) ValueParameter Symbol Unit Supply voltage VCC V 0 5 - Input voltage VIN V 0 1 ~ 0 4 - IO 0 5 - Output current IC(MAX) 0 0 1 - mA Power dissipation W m 0 0 3 d P Junction temperature 0 5 1 j T ℃ Storage temperature 0 5 1 ~ 5 5 - g t s T ℃ Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ Max. Unit Conditions VI(off) V 5 . 0 - CC=-5V ,IO=-100µA Input voltage VI(on) -3 V VO=-0.3V ,IO=-10 mA Output voltage VO(on) -0.3 V IO/II=-10mA/-0.5mA Input current II -0.88 mA VI=-5V Output current IO(off) -0.5 µA VCC=-50V, VI=0 DC current gain GI
30 VO=-5V ,IO=-5mA
Input resistance R1 7 10 13 K Ω Resistance ratio R2/R1 2 . 1 1 8 . 0 Transition frequency fT 250 MHz V CE=-10V ,IE=5mA,f=100MHz PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
- Simplifies Circuit Design
- Reduces Board Space and Component Count Bias Resistor Transistor SEMICO NDUCTOR TECH NICAL DATA DTA114E 1 2 3 TO-92M DIM MILLIMETERS A B C D E F G
3.25 MAX
4.20 MAX
0.48 MAX
1.52 0.1 1.27 15.30 0.20 0.76
0.51 MAX
H J AF G D E E H J C K 0.25 K B 1. EMITTER(GND) 2. COLLECTOR(Output) 3. BASE(Input) IN GND OUT GND OUT IN 3 2014. 10. 06 1/2Revision No : 1 50 80 VCC =-5V ,IO=-10㎃ Switching Time Rise Time (tr) Storage Time (tstg) Fall Time (tf) Vo=-5V Vin=-5V RL=1㏀) uS uS uS 0.06 1.1 0.24
- 10. 06 2/2Revision No : 1