DT452AP

DT452AP DIODES | Alldatasheet

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Maximum Ratings 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS -20 V Drain Current Note 1a Continuous Pulsed ID -5.0 -15 A Maximum Power Dissipation Note 1a Note 1b Note 1c Pd 3.0 1.3 1.1 W Operating and Storage Temperature Range Tj,T STG -65 to +150 °C /c183High Cell Density DMOS Technology /c183Low On-State Resistance /c183High Power and Current Capability /c183Fast Switching Speed /c183High Transient Tolerance Characteristic Symbol Value Unit Thermal Resistance, Junction-to-Ambient Note 1 R/c81JA 42 °C/W Thermal Resistance, Junction-to-Case R/c81JC 12 °C/W Notes: 1. R /c81JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R/c81JC is guaranteed by design while R/c81CA is determined by the user’s board design. 1a. With 1 in2 oz 2 oz. copper mounting pad R/c81JA = 42°C/W. 1b. With 0.066 in2 oz 2 oz. copper mounting pad R/c81JA = 95°C/W. 1c. With 0.0123 in2 oz 2 oz. copper mounting pad R/c81JA = 110°C/W. D G D S A B C D G HJ K L M N P R S E Mechanical Data /c183SOT-223 Plastic Case /c183Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above SOT-223 Dim Min Max A 6.30 6.71 B 2.90 3.10 C 6.71 7.29 D 3.30 3.71 E 2.22 2.35 G 0.92 1.00 H 1.10 1.30 J 1.55 1.80 K 0.025 0.102 L 0.66 0.79 M 4.55 4.70 N — 10° P 10° 16° R 0.254 0.356 S 10° 16° All Dimensions in mm

DS11611 Rev. C-4 2 of 4 DT452AP Electrical Characteristics25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current Tj = 55°C IDSS —— -1.0 -10 µA VDS = -24V, VGS = 0V Gate-Body Leakage, Forward IGSSF — — 100 nA VGS = 20V, VDS = 0V Gate-Body Leakage, Reverse IGSSR — — -100 nA VGS = -20V, VDS = 0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Tj = 125°C VGS(th) VGS(th) -1.0 -0.7 -1.6 -1.2 -2.8 -2.2 V V DS =V GS, ID = -250µA Static Drain-Source On-Resistance Tj = 125°C RDS (ON) RDS (ON) RDS (ON) 0.052 0.075 0.085 0.065 0.13 0.10 /c87 V GS = -10V, ID = -5.0A VGS = -10V, ID = -5.0A VGS = -4.5V, ID = -4.3A On-State Drain Current ID(ON) -15 -5.0 —— A VGS = -10V, VDS = -5 .0V VGS = -4.5V, VDS = -5 .0V Forward Transconductance gFS — 7.0 — m VDS = -10V, ID = -5.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS — 690 — pF VDS = -15V, VGS = 0V f = 1.0MHzOutput Capacitance COSS — 430 — pF Reverse Transfer Capacitance CRSS — 160 — pF SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time tD(ON) — 9.0 20 ns VDD = -10V, ID = -1.0A VGEN = -10V, RGEN = 6.0/c87 Turn-On Rise Time tr —2 03 0n s Turn-Off Delay Time tD(OFF) —4 05 0n s Turn-Off Fall Time tf —1 94 0n s Total Gate Charge Qg —2 23 0 n C VDS = -10V. ID = -5.0A. VGS = -10VGate-Source Charge Qgs — 3.2 — nC Gate-Drain Charge Qgd — 5.2 — nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode Forward Current I S — — -2.5 A Drain-Source Diode Forward Voltage VSD — -0.85 -1.2 V VGS = 0V, IS = -2.5A (Note 2) Notes: 2. Pulse Test: Pulse width l 300 µs, duty cycle l 2.0%.

DS11611 Rev. C-4 3 of 4 DT452AP -10 -15 -20 0 -1 -2 -3 -4 I ,DRAIN-SOURCE CURRENT (A) D V , DRAIN-SOURCE VOLTAGE (V) Fig. 1, On-Re gion Characteristics DS V = -10 VGS -6.0 -4.5 -4.0 -3.0 -3.5 -5.0 -1 -2 -3 -4 -5 - 6 I ,DRAIN CURRENT (A) D V , GATE TO SOURCE VOLTAGE (V) Fig.4 , Transfer Characteristics GS V = -10 VDS T = -55 Cj 125 C 25 C 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 R ,NORMALIZED DRAIN-SOURCE ON-RESIST ANCE DS(ON) T , JUNCTION TEMPERATURE ( C) Fig. 3, On-Resistance vs Junction Temperature j I = -5.0A V = -10 V D GS 0.5 1.0 1.5 2.0 2.5 3.0 NORMALIZED DRAIN-S OURCE ON-RESIST ANCE DS(ON) I , DRAIN CURRENT (A) Fig. 2, On-Resistance vs Gate Voltage & Drain Curren t D -4 -8 -12 -16 -20 V = -3.5 VGS -4.0 -4.5 -5.0 -6.0 -10.0

DS11611 Rev. C-4 4 of 4 DT452AP 0.01 0.1 1.0 0.1 1.0 10 50 ,DRAIN CURRENT (A) D -V , DRAIN-SOURCE VOLTAGE (V) Fig. 5, Maximum Safe Operatin g Area DS 100 s R Limit DS(ON) V = -10 V Single Pulse R = See Note 1c T = 25 C GS QJA A s ms 100 ms s dc 0.001 0.01 0.1 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESIST ANCE t , SQUARE WAVE PULSE DURATION (seconds) Fig. 6, Typical Normalized Transient Thermal Impedance Curves 1000 3000 Single Pulse 0.01 0.05 0.1 0.2 0.02 D = 0.5 P(pk) T - T = P b R (t) Duty Cycle, D = t /t J A PK QJA R (t) = r(t) b R R = See Note 1c QJA QJA QJA Remark: Thermal characterization performed under conditions described in note 1c. Transient thermal response will change depending on the circuit board design.