DT451AN DIODES | Alldatasheet

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Maximum Ratings 25°C unless otherwise specified Notes: 1. R /c81JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R/c81JC is guaranteed by design while R/c81CA is determined by the user’s board design. 1a. With 1 in2 oz 2 oz. copper mounting pad R/c81JA = 42°C/W. 1b. With 0.0066 in2 oz 2 oz. copper mounting pad R/c81JA = 95°C/W. 1c. With 0.0123 in2 oz 2 oz. copper mounting pad R/c81JA = 110°C/W. Characteristic Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current Continuous Pulsed ID ±7.2 ±25 A Maximum Power Dissipation Note 1a Note 1b Note 1c Pd 3.0 1.3 1.1 W Operating and Storage Temperature Range Tj,T STG -65 to +150 °C /c183High Cell Density DMOS Technology /c183Low On-State Resistance /c183High Power and Current Capability /c183Fast Switching Speed /c183High Transient Tolerance D G D S A B C D G HJ K L M N P R S E Mechanical Data Characteristic Symbol Value Unit Thermal Resistance, Junction-to-Ambient Note 1 R/c81JA 42 °C/W Thermal Resistance, Junction-to-Case R/c81JC 12 °C/W /c183SOT-223 Plastic Case /c183Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above SOT-223 Dim Min Max A 6.30 6.71 B 2.90 3.10 C 6.71 7.29 D 3.30 3.71 E 2.22 2.35 G 0.92 1.00 H 1.10 1.30 J 1.55 1.80 K 0.025 0.102 L 0.66 0.79 M 4.55 4.70 N — 10° P 10° 16° R 0.254 0.356 S 10° 16° All Dimensions in mm

DS11606 Rev. C-4 2 of 4 DS451AN Electrical Characteristics25°C unless otherwise specified Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%. Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current Tj = 55°C IDSS —— 1.0 10 µA VDS = 24V, VGS = 0V Gate-Body Leakage, Forward IGSSF — — 100 nA VGS = 20V, VDS = 0V Gate-Body Leakage, Reverse IGSSR — — -100 nA VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Tj = 125°C VGS(th) -1.0 -0.7 1.6 1.2 3.0

2.2 V V D S=V

GS, ID = 250µA Static Drain-Source On-Resistance Tj = 125°C RDS (ON) — 0.030 0.042 0.042 0.058 0.035 0.070 0.055 0.100 /c87 V GS = 10V, ID = 7.2A VGS = 4.5V, ID = 6.0A On-State Drain Current ID(ON) 25 15 —— A V GS = 10V, VDS = 5.0V VGS = 4.5V, VDS = 5.0V Forward Transconductance gFS —1 1— m VDS = 10V, ID = 7.2A DYNAMIC CHACTERISTICS Input Capacitance CISS — 720 — pF VDS = 15V, VGS = 0V f = 1.0MHzOutput Capacitance COSS — 370 — pF Reverse Transfer Capacitance CRSS — 250 — pF SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time tD(ON) —1 22 0n s VDD = 10V, ID = 1.0A VGEN = 10V, RGEN = 6.0/c87 Turn-On Rise Time tr —1 33 0n s Turn-Off Delay Time tD(OFF) —2 95 0n s Turn-Off Fall Time tf —1 02 0n s Total Gate Charge Qg —1 93 0 n C VDS = 10V, ID = 3.0A. VGS = 10VGate-Source Charge Qgs — 2.3 — nC Gate-Drain Charge Qgd — 5.5 — nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode Forward Current I S — — 2.3 A Drain-Source Diode Forward Voltage VSD — 0.9 1.3 V VGS = 0V, IS = 7.2A (Note 2) Reverse Recovery Time trr — — 100 ns VGS = 0V, IF = 1.25A dIp/dt = 100A/µS

DS11606 Rev. C-4 3 of 4 DS451AN I ,DRAIN-S ORCE CURRENT (A) D V , DRAIN-SOURCE VOLTAGE (V) Fig. 1, On-Region Characteristics DS V = 10VGS 6.0 5.0 4.5 4.0 3.5 3.0 1234 5 6 I ,DRAIN CURRENT (A) D V , GATE TO SOURCE VOLTAGE (V) Fig. 4, Transfer Characteristics GS V = 10VDS T = -55 CJ 25 C 125 C 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 NORMALIZED DRAIN-S OURCE ON-RESIST ANCE DS(ON) T , JUNCTION TEMPERATURE ( C) Fig. 3, On-Resistance vs Temperature j I = 7.2AD V = 10VGS 0.5 1.0 1.5 2.0 2.5 NORMALIZED DRAIN-S OURCE ON-RESIST ANCE DS(ON) I , DRAIN CURRENT (A) Fig. 2, On-Resistance vs Gate Voltage and Drain Curren t D 3.0 51 0 1 5 2 0 2 5 V = 3.0VGS 3.5 4.0 4.5 5.0 6.0

DS11606 Rev. C-4 4 of 4 DS451AN 0.01 0.1 0.1 1 10 50 I ,DRAIN CURRENT (A) D VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 5, Maximum Safe Operatin g Area R LIMIT DS(ON) V = 10VGS SINGLE PULSE R = 42 CQJA T = 25 CA 100 s 1ms 10ms 100ms 10s dc 0.001 0.01 0.1 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESIST ANCE t , SQUARE WAVE PULSE DURATION (seconds) Fig. 6, Typical Normalized Transient Thermal Impedance Curves 1000 3000 Single Pulse 0.01 0.05 0.1 0.2 0.02 D = 0.5 P(pk) T - T = P b R (t) Duty Cycle, D = t /t J A PK QJA R (t) = r(t) b R R = See Note 1c QJA QJA QJA