DT410EL

DT410EL DIODES | Alldatasheet

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/c183SOT-223 Plastic Case /c183Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above Thermal Characteristics Maximum Ratings 25°C unless otherwise specified Notes: 1. R /c81JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R /c81JC is guaranteed by design while R/c81CA is determined by the user’s board design. 1a. With 1 in2 oz 2 oz. copper mounting pad R/c81JA = 42°C/W. 1b. With 0.0066 in2 oz 2 oz. copper mounting pad R/c81JA = 95°C/W. 1c. With 0.0123 in2 oz 2 oz. copper mounting pad R/c81JA = 110°C/W. Characteristic Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Drain Current Note 1a Continuous Pulsed ID ±2.1 ±10 A Maximum Power Dissipation Note 1a Note 1b Note 1c Pd 3.0 1.3 1.1 W Operating and Storage Temperature Range Tj,T STG -65 to +150 °C /c183High Cell Density DMOS Technology /c183Low On-State Resistance /c183High Power and Current Capability /c183Fast Switching Speed /c183High Transient Tolerance Characteristic Symbol Value Unit Thermal Resistance, Junction-to-Ambient Note 1 R/c81JA 42 °C/W Thermal Resistance, Junction-to-Case R/c81JC 12 °C/W D G D S A B C D G HJ K L M N P R S E Mechanical Data SOT-223 Dim Min Max A 6.30 6.71 B 2.90 3.10 C 6.71 7.29 D 3.30 3.71 E 2.22 2.35 G 0.92 1.00 H 1.10 1.30 J 1.55 1.80 K 0.025 0.102 L 0.66 0.79 M 4.55 4.70 N — 10° P 10° 16° R 0.254 0.356 S 10° 16° All Dimensions in mm

DS11601 Rev.C-4 2 of 4 DT410EL Electrical Characteristics25°C unless otherwise specified Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%. Characteristic Symbol Min Typ Max Unit Test Condition DRAIN-SOURCE AVALANCHE RATINGS (Note 2) Single Pulse Drain-Source Avalanche Energy W DSS — — 15 mJ VDD = 50V, ID = 10A Maximum Drain-Source Avalanche Current I AR — — 10 A OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 100 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current Tj =55°C IDSS 1.0 10 µA VDS = 80V, V GS = 0V Gate-Body Leakage, Forward IGSSF — — 100 nA VGS = 20V, VDS = 0V Gate-Body Leakage, Reverse IGSSR — — -100 nA VGS = -20V, VDS = 0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Tj = 125°C VGS(th) 1.0 0.65 1.5 1.1 2.0

1.5 V V

DS =V GS, ID = 250µA Static Drain-Source On-Resistance Tj = 125°C RDS (ON) — 0.2 0.37 0.25 0.50 /c87 V GS = 5.0V, ID = 2.1A On-State Drain Current ID(ON) 10 — — A VGS = 5.0V, VDS = 5.0V Forward Transconductance gFS — 6.0 — m VGS = 10V, ID = 2.1A DYNAMIC CHARACTERISTICS Input Capacitance CISS — 528 — pF VDS = 25V, VGS = 0V f = 1.0MHzOutput Capacitance COSS —8 5—p F Reverse Transfer Capacitance CRSS —2 0—p F SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time tD(ON) — 9.0 20 ns VDD = 50V, ID = 2.1A VGEN = 5.0V, RGEN = 25/c87 Turn-On Rise Time tr — 72 120 ns Turn-Off Delay Time tD(OFF) —4 98 0n s Turn-Off Fall Time tf —4 78 0n s Total Gate Charge Qg —1 01 6 n C VDS = 80V, ID = 2.1A. VGS = 5.0VGate-Source Charge Qgs — 1.5 — nC Gate-Drain Charge Qgd — 5.6 — nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode Forward Current I S — — 2.3 A Drain-Source Diode Forward Voltage VSD — — 1.3 V VGS = 0V, IS = 2.3A (Note 2) Reverse Recovery Time trr — — 150 ns VGS = 0V, IF = 2.3A, dlF / dt = 100A / µs

DS11601 Rev.C-4 3 of 4 DT410EL 01 2 3 45 6 I ,DRAIN-SOURCE CURRENT (A) D V , DRAIN-SOURCE VOLTAGE (V) Fig. 1, On-Re gion Characteristics DS V = 10VGS 6.0 5.0 4.0 3.5 3.0 2.5 12345 I ,DRAIN CURRENT (A) D V , GATE TO SOURCE VOLTAGE (V) Fig. 4, Transfer Characteristics GS V = 10VDS T = -55 CJ 125 0.5 1.0 1.5 2.0 2.5 -50 05 0 100 150 175 NORMALIZED DRAIN-S OURCE ON-RESIST ANCE DS(ON) T , JUNCTION TEMPERATURE ( C) Fig. 3, On-Resistance vs Temperature j I = 2.1AD V= 5 VGS 0.5 1.0 1.5 2.0 02468 1 0 NORMALIZED DRAIN-S OURCE 0N-RESIST ANCE DS(ON) I , DRAIN CURRENT (A) Fig. 2, On-Resistance vs Gate Voltage and Drain Curren t D V = 3.0VGS 3.5 4.0 5.0 6.0

DS11601 Rev.C-4 4 of 4 DT410EL 0.1 0.1 1 10 100 I ,DRAIN CURRENT (A) D V , DRAIN-SOURCE VOLTAGE (V) Fig. 5, Maximum Safe Operating Area DS R LIMIT DS(ON) s 100 s 1ms 10ms 10s dc V = 10VGS SINGLE PULSE R = 42 CQJA T = 25 CA 0.001 0.01 0.1 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESIST ANCE t , SQUARE WAVE PULSE DURATION (seconds) Fig. 6, Typical Normalized Transient Thermal Impedance Curves 1000 3000 Single Pulse 0.01 0.05 0.1 0.2 0.02 D = 0.5 P(pk) T - T = P b R (t) Duty Cycle,D=t / t J A PK QJA R (t) = r(t) b R R = See Note 1c QJA QJA QJA Remark: Thermal characterization performed under conditions described in note 1c. Transient thermal response will change depending on the circuit board design.