DT3055

DT3055 DIODES | Alldatasheet

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Maximum Ratings 25°C unless otherwise specified Notes: 1. R /c81JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R/c81JC is guaranteed by design while R/c81CA is determined by the user’s board design. 1a. With 1 in2 oz 2 oz. copper mounting pad R/c81JA = 42°C/W. 1b. With 0.0066 in2 oz 2 oz. copper mounting pad R/c81JA = 95°C/W. 1c. With 0.0123 in2 oz 2 oz. copper mounting pad R/c81JA = 110°C/W. Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage - Continuous VGSS ±20 V Drain Current Note 1a Continuous Pulsed ID ±4 ±25 A Maximum Power Dissipation Note 1a Note 1b Note 1c Pd 3.0 1.3 1.1 W Operating and Storage Temperature Range Tj,T STG -65 to +150 °C /c183High Cell Density DMOS Technology /c183Low On-State Resistance /c183High Power and Current Capability /c183Fast Switching Speed /c183High Transient Tolerance Characteristic Symbol Value Unit Thermal Resistance, Junction-to-Ambient Note 1 R/c81JA 42 °C/W Thermal Resistance, Junction-to-Case R/c81JC 12 °C/W D G D S A B C D G HJ K L M N P R S E Mechanical Data /c183SOT-223 Plastic Case /c183Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above SOT-223 Dim Min Max A 6.30 6.71 B 2.90 3.10 C 6.71 7.29 D 3.30 3.71 E 2.22 2.35 G 0.92 1.00 H 1.10 1.30 J 1.55 1.80 K 0.025 0.102 L 0.66 0.79 M 4.55 4.70 N — 10° P 10° 16° R 0.254 0.356 S 10° 16° All Dimensions in mm

DS11604 Rev. C-4 2 of 4 DT3055 Electrical Characteristics25°C unless otherwise specified Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%. Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current Tj =125°C IDSS — 100 µA V DS = 48V, VGS = 0V Gate-Body Leakage, Forward IGSSF — — 100 nA VGS = 20V, VDS = 0V Gate-Body Leakage, Reverse IGSSR — — -100 nA VGS = -20V, VDS = 0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Tj = 100°C VGS(th) 2.0 1.5 2.9 2.3 4.0

3.0 V V

DS =V GS, ID = 250µA Static Drain-Source On-Resistance Tj = 125°C RDS (ON) 0.075 0.13 0.10 0.22 /c87 V GS = 10V, ID = 4.0A On-State Drain Current ID(ON) 15 — — A VGS = 10V. VDS = 10V Forward Transconductance gFS — 3.5 — m VDS = 15V, ID = 4.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS — 350 — pF VDS = 30V, VGS = 0V f = 1.0MHzOutput Capacitance COSS — 135 — pF Reverse Transfer Capacitance CRSS —4 0—p F SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time tD(ON) —1 82 5n s VDD = 25V, ID = 1.2A VGS = 10V, RGEN = 50/c87 Turn-On Rise Time tr —2 55 0n s Turn-Off Delay Time tD(OFF) —4 36 5n s Turn-Off Fall Time tf —3 46 0n s Total Gate Charge Qg —1 01 5 n C VDS = 40V. ID = 4.0A. VGS = 10VGate-Source Charge Qgs — 2.0 4.0 nC Gate-Drain Charge Qgd — 6.0 10 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode Forward Current I S — — 2.5 A Source-Drain Diode Forward Voltage VSD — — 1.2 V VGS = 0V, IS = 4.0A (Note 2)

DS11604 Rev. C-4 3 of 4 DT3055 0123 4 I ,DRAIN-SOURCE CURRENT D V , DRAIN-SOURCE VOLTAGE (V) Fig. 1, On-Re gion Characteristics DS V = 10VGS 8.0 7.0 6.0 5.5 5.0 4.5 2468 I ,DRAIN CURRENT (A) D V , GATE TO SOURCE VOLTAGE (V) Fig. 4, On-Resistance vs Gate Volta ge & Temperature GS V = 10VDS T = -55 CJ 125 C 25 C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 NORMALIZED DRAIN-S OURCE ON-RESIST ANCE DS(ON) T , JUNCTION TEMPERATURE ( C) Fig. 3, On-Resistance Variation vs Temperature j I= 4 AD V = 10VGS 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 1 21 62 0 NORMALIZED DRAIN-S OURCE ON-RESIST ANCE DS(ON) I , DRAIN CURRENT (A) Fig. 2, On-Resistance vs Gate Voltage and Drain Curren t D V = 5.0VGS 5.5 6.0 7.0 8.0

DS11604 Rev. C-4 4 of 4 DT3055 0.01 -.1 0.1 1 10 100 I ,DRAIN CURRENT (A) D V , DRAIN-SOURCE VOLTAGE (V) Fig. 5, Maximum Safe Operating Area DS R LIMIT DS(ON) 100 s 100ms 10s dc 0.001 0.01 0.1 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESIST ANCE t , SQUARE WAVE PULSE DURATION (seconds) Fig. 6, Typical Normalized Transient Thermal Impedance Curves 1000 3000 Single Pulse 0.01 0.05 0.1 0.2 0.02 D = 0.5 P(pk) T - T = P b R (t) Duty Cycle,D=t / t J A PK QJA R (t) = r(t) b R R = See Note 1c QJA QJA QJA Remark: Thermal characterization performed under conditions described in note 1c. Transient thermal response will change depending on the circuit board design.