DT2955

DT2955 DIODES | Alldatasheet

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Maximum Ratings 25°C unless otherwise specified Characteristic Symbol Value Unit Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V Drain Current Note 1a Continuous Pulsed ID -2.5 -15 A Maximum Power Dissipation Note 1a Note 1b Note 1c Pd 3.0 1.3 1.1 W Operating and Storage Temperature Range Tj,T STG -65 to +150 °C /c183High Cell Density DMOS Technology /c183Low On-State Resistance /c183High Power and Current Capability /c183Fast Switching Speed /c183High Transient Tolerance Characteristic Symbol Value Unit Thermal Resistance, Junction-to-Ambient Note 1 R/c81JA 42 °C/W Thermal Resistance, Junction-to-Case R/c81JC 12 °C/W Notes: 1. R /c81JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R/c81JC is guaranteed by design while R/c81CA is determined by the user’s board design. 1a. With 1 in2 oz 2 oz. copper mounting pad R/c81JA = 42°C/W. 1b. With 0.0066 in2 oz 2 oz. copper mounting pad R/c81JA = 95°C/W. 1c. With 0.0123 in2 oz 2 oz. copper mounting pad R/c81JA = 110°C/W. D G D S A B C D G HJ K L M N P R S E Mechanical Data /c183SOT-223 Plastic Case /c183Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above SOT-223 Dim Min Max A 6.30 6.71 B 2.90 3.10 C 6.71 7.29 D 3.30 3.71 E 2.22 2.35 G 0.92 1.00 H 1.10 1.30 J 1.55 1.80 K 0.025 0.102 L 0.66 0.79 M 4.55 4.70 N — 10° P 10° 16° R 0.254 0.356 S 10° 16° All Dimensions in mm

DS11610 Rev. C-4 2 of 4 DT2955 Electrical Characteristics25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS -60 — — V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current Tj = 125°C IDSS —— -10 -100 µA VDS = -60V, VGS = 0V Gate-Body Leakage, Forward IGSSF — — 100 nA VGS = 20V, VDS = 0V Gate-Body Leakage, Reverse IGSSR — — -100 nA VGS = -20V, VDS = 0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Tj = 125°C VGS(th) -2.0 -0.8 -2.4 -2.0 -4.0 -2.6 V V DS =V GS, ID = -250µA Static Drain-Source On-Resistance Tj = 125°C RDS (ON) — 0.21 0.3 0.36 0.30 0.45 0.50 /c87 V GS = -10V, ID = -2.5A VGS = -10V, ID = -2.5A VGS = -4.5V, ID = -2.0A On-State Drain Current ID(ON) -12 — — A VGS = -10V, VDS = -5.0V Forward Transconductance gFS — 3.5 — m VDS = -10V, ID = -2.5A DYNAMIC CHACTERISTICS Input Capacitance Ciss — 570 — pF VDS = -25V, VGS = 0V f = 1.0MHzOutput Capacitance Coss — 140 — pF Reverse Transfer Capacitance Crss —4 0—p F SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time tD(ON) — 8.0 15 ns VDD = -30V, ID = -1.0A VGEN = -10V, RGEN = 6.0/c87 Turn-On Rise Time tr —2 04 0n s Turn-Off Delay Time tD(OFF) —2 04 0n s Turn-Off Fall Time tf — 5.0 20 ns Total Gate Charge Qg —1 62 5 n C VDS = -30V. ID = -2.5A. VGS = -10VGate-Source Charge Qgs — 2.0 5.0 nC Gate-Drain Charge Qgd — 4.0 8.0 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode Forward Current I S — — -2.3 A Drain-Source Diode Forward Voltage VSD — — -1.3 V VGS = 0V, IS = -2.5A (Note 2) Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%.

DS11610 Rev. C-4 3 of 4 DT2955 I ,DRAIN-SOURCE CURRENT (A) D V , DRAIN-SOURCE VOLTAGE (V) Fig. 1, On-Re gion Characteristics DS V = -10VGS -8.0 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -7.0 -2 -3 -4 -5 -6 -7 I ,DRAIN CURRENT (A) D V , GATE TO SOURCE VOLTAGE (V) Fig. 4, Drain Current vs Gate Volta ge & Temperature GS T = -55 CJ 25 C

125 CV = -10VDS

0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 NORMALIZED DRAIN-S OURCE ON-RESIST ANCE DS(ON) T , JUNCTION TEMPERATURE ( C) Fig. 3, On-Resistance vs Temperature j I = -2.5A V = -10V D GS 0.5 1.0 1.5 2.0 2.5 3.0 0 -3 -6 -9 -12 -15 NORMALIZED DRAIN-S OURCE ON-RESIST ANCE DS(ON) I , DRAIN CURRENT (A) Fig. 2, On-Resistance vs Gate Voltage and Drain Curren t D V = -4.0VGS -4.5 -5.0 -5.5 -6.0 -7.0 -8.0 -10

DS11610 Rev. C-4 4 of 4 DT2955 0.01 0.1 0.1 1.0 10 100 ,DRAIN CURRENT (A) D -V , DRAIN-SOURCE VOLTAGE (V) Fig. 5, Maximum Safe Operating Area DS R LIMIT DS(ON) 100 s 1ms 10ms 100ms 10s dc V = -10V SINGLE PULSE R = 42 C T = 25 C GS qJA A 0.001 0.01 0.1 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESIST ANCE t , SQUARE WAVE PULSE DURATION (seconds) Fig. 6, Typical Normalized Transient Thermal Impedance Curves 1000 3000 Single Pulse 0.01 0.05 0.1 0.2 0.02 D = 0.5 P(pk) T - T = P b R (t) Duty Cycle,D=t / t J A PK QJA R (t) = r(t) b R R = See Note 1c QJA QJA QJA Remark: Thermal characterization performed under conditions described in note 1c. Transient thermal response will change depending on the circuit board design.