DT014L

DT014L DIODES | Alldatasheet

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Maximum Ratings 25°C unless otherwise specified D G D S A B C D G HJ K L M N P R S E Mechanical Data /c183SOT-223 Plastic Case /c183Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above SOT-223 Dim Min Max A 6.30 6.71 B 2.90 3.10 C 6.71 7.29 D 3.30 3.71 E 2.22 2.35 G 0.92 1.00 H 1.10 1.30 J 1.55 1.80 K 0.025 0.102 L 0.66 0.79 M 4.55 4.70 N — 10° P 10° 16° R 0.254 0.356 S 10° 16° All Dimensions in mm

DS11603 Rev. C-4 2 of 4 DT014L Electrical Characteristics25°C unless otherwise specified Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%. Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current Tj =55°C IDSS —— 25 250 µA VDS = 60V, VGS = 0V Gate-Body Leakage, Forward IGSSF — — 100 nA VGS = 20V, VDS = 0V Gate-Body Leakage, Reverse IGSSR — — -100 nA VGS = -20V, VDS = 0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Tj = 125°C VGS(th) 1.0 0.8 1.5 1.2 3.0

2.0 V V

DS =V GS, ID = 250µA Static Drain-Source On-Resistance Tj = 125°C RDS (ON) — 0.17 0.25 0.12 0.2 0.36 0.16 /c87 V GS = 4.5V, ID = 2.6A VGS = 4.5V, ID = 2.6A VGS = 10V, ID = 3.4A On-State Drain Current ID(ON) 5.0 10 —— A VGS = 4.5, VDS = 5.0V VGS = 10V, VDS = 5.0V Forward Transconductance gFS — 4.0 — m VGS = 5.0V, ID = 2.6A DYNAMIC CHARACTERISTICS Input Capacitance CISS — 214 — pF VDS = 30V, VGS = 0V f = 1.0MHzOutput Capacitance COSS —7 0—p F Reverse Transfer Capacitance CRSS —2 7—p F SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time tD(ON) — 6.0 12 ns VDD = 30V, ID = 3.0A VGEN = 10V, RGEN = 12/c87 Turn-On Rise Time tr —1 42 5n s Turn-Off Delay Time tD(OFF) —1 52 8n s Turn-Off Fall Time tf —1 01 8n s Total Gate Charge Qg — 3.6 5.0 nC VDS = 10V, ID = 2.6A. VGS = 4.5VGate-Source Charge Qgs — 0.8 — nC Gate-Drain Charge Qgd — 1.4 — nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode Forward Current I S — — 2.3 A Drain-Source Diode Forward Voltage (Note 2) V SD — 0.85 1.3 V VGS = 0V, IS = 2.3A Reverse Recovery Time trr — — 140 ns VGS = 0V, IF = 2.3A, dlF / dt = 100 A/µs

DS11603 Rev. C-4 3 of 4 DT014L 012345 I ,DRAIN-SOURCE CURRENT (A) D V DRAIN-SOURCE VOLTAGE (V) Fig. 1, On-Re gion Characteristics DS, V = 10VGS 6.0 5.0 4.5 4.0 3.5 3.0 2.5 012 345 6 V= 5 VDS T = -55 CJ 125 I ,DRAIN CURRENT (A) D V , GATE TO SOURCE VOLTAGE (V) Fig. 4, Transfer Characteristics GS 0.5 0.75 1.0 1.25 1.5 1.75 -50 -25 0 25 50 75 100 125 150 NORMALIZED DRAIN-S OURCE ON-RESIST ANCE DS(ON) T , JUNCTION TEMPERATURE ( C) Fig. 3, On-Resistance vs Temperature j I = 2.6AD V = 10VGS 0.5 0.75 1.0 1.25 1.50 1.75 2.0 02 4 6 8 1 0 NORMALIZED DRAIN-S OURCE ON-RESIST ANCE DS(ON) I , DRAIN CURRENT (A) Fig. 2, On-Resistance vs Gate Voltage and Drain Curren t D V = 3.0VGS 3.5 4.0 4.5 6.0 5.0

DS11603 Rev. C-4 4 of 4 DT014L 0.01 0.1 0.1 1 10 100 I ,DRAIN CURRENT (A) D V , DRAIN-SOURCE VOLTAGE (V) Fig. 5, Maximum Safe Operating Area DS R LIMIT DS(ON) V = 4.5 VGS SINGLE PULSE R = See Note 1cqJA T = 25 CA s 100 s ms 100 ms sdc 0.001 0.01 0.1 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESIST ANCE t , SQUARE WAVE PULSE DURATION (seconds) Fig. 6, Typical Normalized Transient Thermal Impedance Curves 1000 3000 Single Pulse 0.01 0.05 0.1 0.2 0.02 D = 0.5 P(pk) T - T = P b R (t) Duty Cycle,D=t / t J A PK QJA R (t) = r(t) b R R = See Note 1c QJA QJA QJA Remark: Thermal characterization performed under conditions described in note 1c. Transient thermal response will change depending on the circuit board design.