DT014

DT014 DIODES | Alldatasheet

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Maximum Ratings 25°C unless otherwise specified D G D S A B C D G HJ K L M N P R S E Mechanical Data SOT-223 Dim Min Max A 6.30 6.71 B 2.90 3.10 C 6.71 7.29 D 3.30 3.71 E 2.22 2.35 G 0.92 1.00 H 1.10 1.30 J 1.55 1.80 K 0.025 0.102 L 0.66 0.79 M 4.55 4.70 N — 10° P 10° 16° R 0.254 0.356 S 10° 16° All Dimensions in mm

DS11602 Rev.C-4 2 of 4 DT014 Electrical Characteristics25°C unless otherwise specified Notes: 2. Pulse Test: Pulse width l 300µs, duty cycle l 2.0%. Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current Tj =125°C IDSS 250 µA VDS = 60V, V GS = 0V VDS = 48V, VGS = 0V Gate-Body Leakage, Forward IGSSF — — 100 nA VGS = 20V, VDS = 0V Gate-Body Leakage, Reverse IGSSR — — -100 nA VGS = -20V, VDS = 0V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(th) 2.0 3.0 4.0 V VDS =V GS, ID = 250µA Static Drain-Source On-Resistance RDS (ON) — 0.18 0.2 /c87 VGS = 10V, ID = 1.6A Forward Transconductance gFS — 2.0 — m VDS = 25V, ID = 1.6A DYNAMIC CHARACTERISTICS Input Capacitance CISS — 155 — pF VDS = 25V, VGS = 0V f = 1.0MHzOutput Capacitance COSS —6 0—p F Reverse Transfer Capacitance CRSS —1 5—p F SWITCHING CHARACTERISTICS (Note 2) Turn-On Delay Time tD(ON) —1 02 0n s VDD = 30V, ID = 10A VGEN = 10V, RGEN = 24/c87 Turn-On Rise Time tr — 64 100 ns Turn-Off Delay Time tD(OFF) —1 02 0n s Turn-Off Fall Time tf —1 02 0n s Total Gate Charge Qg — 5.0 11 nC VDS = 48V. ID = 10A. VGS = 10VGate-Source Charge Qgs — 1.2 3.1 nC Gate-Drain Charge Qgd — 2.0 5.8 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Max Continuous Drain-Source Diode Forward Current I S — — 2.7 A Max Pulsed Drain-Source Diode Forward Current I SM — — 22 A Drain-Source Diode Forward Voltage (Note 2) V SD — 0.95 1.6 V VGS = 0V, IS = 2.7A Reverse Recovery Time trr — — 140 ns VGS = 0V, IF = 10A dlF / dt = 100A/µs

DS11602 Rev.C-4 3 of 4 DT014 012 3 4 I ,DRAIN-SOURCE CURRENT (A) D V , DRAIN-SOURCE VOLTAGE (V) Fig. 1, On-Re gion Characteristics DS V = 10VGS 8.0 7.0 6.0 5.5 5.0 4.5 6.5 24 68 1 0 I ,DRAIN CURRENT (A) D V , GATE TO SOURCE VOLTAGE (V) Fig. 4, Transfer Characteristics GS V = 10VDS T = -55 CJ 125 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 NORMALIZED DRAIN-S OURCE ON-RESIST ANCE DS(ON) T , JUNCTION TEMPERATURE ( C) Fig. 3, On-Resistance vs Temperature j I = 1.6AD V = 10VGS 0.5 1.0 1.5 2.0 2.5 02 46 8 10 NORMALIZED DRAIN-S OURCE ON-RESIST ANCE DS(ON) I , DRAIN CURRENT (A) Fig. 2, On-Resistance vs Gate Voltage & Drain Curren t D V = 5.5VGS 6.0 6.5 7.0 8.0

DS11602 Rev.C-4 4 of 4 DT014 0.01 0.1 1.0 0.1 1.0 10 100 I ,DRAIN CURRENT (A) D V , DRAIN-SOURCE VOLTAGE (V) Fig. 5, Maximum Safe Operating Area DS R LIMIT DS(ON) 100 s1ms 10ms 100ms 10s 0.001 0.01 0.1 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESIST ANCE t , SQUARE WAVE PULSE DURATION (seconds) Fig. 6, Typical Normalized Transient Thermal Impedance Curves 1000 3000 Single Pulse 0.01 0.05 0.1 0.2 0.02 D = 0.5 P(pk) T - T = P b R (t) Duty Cycle, D = t /t J A PK QJA R (t) = r(t) b R R = See Note 1c QJA QJA QJA Remark: Thermal characterization performed under conditions described in note 1c. Transient thermal response will change depending on the circuit board design.