DST3904DJ

DST3904DJ COMPLEMENTARY NPN/PNP SURFACE MOUNT TRANSISTOR SOT-963

Document overview

• Manufacturer or author: Diodes Incorporated
• PDF pages: 6

Technical content

Features

• V CEO = 40V
• I C = 200mA
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• “Green” Device (Note 2)
• Ultra Small Package Mechanical Data
• Case: SOT-963
• Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
• Weight: 0.0027 grams (approximate)

Ordering Information

DST3904DJ-7 SOT-963 10,000/Tape & Reel Notes: 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com Marking Information Device Schematic Top View SOT-963 T8 = Product Type Marking Code

Document number: DS32038 Rev. 2 - 2 2 of 6 www.diodes.com April 2010 © Diodes Incorporated DST3904DJ NEW PRODUCT Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V Collector Current - Continuous (Note 3) IC 200 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) PD 300 mW Thermal Resistance, Junction to Ambient (Note 3) RθJA 417 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 3. Device mounted on FR-4 PCB with minimum recommended pad layout. Fig. 1 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 370°C/W θ θ JA JA P(pk) D = 0.7 D = 0.5 D = 0.3 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.1 0.00001 0.001 0.1 10 1,000 Fig. 2 Single Pulse Maximum Power Dissipation t , PULSE DURATION TIME (s)1 100 1,000P(pk), PEAK TRANSIENT POWER (W) 0.1 Single Pulse T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 370°C/W θ θ JA JA 0.1 0.2 0.3 0.4 0 20 40 60 80 100 120 140 160 T , AMBIENT TEMPERATURE ( C)A ° Fig. 3 Power Dissipation vs. Ambient Temperature P , POWER DISSIPATION (W)D Note 3

Document number: DS32038 Rev. 2 - 2 3 of 6 www.diodes.com April 2010 © Diodes Incorporated DST3904DJ NEW PRODUCT Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO 60 ⎯ V IC = 10μA, IE = 0 Collector-Emitter Breakdown Voltage (Note 4) V(BR)CEO 40 ⎯ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ⎯ V IE = 10μA, IC = 0 Collector Cutoff Current ICEX ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V Base Cutoff Current IBL ⎯ 50 nA VCE = 30V, VEB(OFF) = 3.0V ON CHARACTERISTICS (Note 4) DC Current Gain hFE 100 300 I C = 100µA, VCE = 1.0V IC = 1.0mA, VCE = 1.0V IC = 10mA, VCE = 1.0V IC = 50mA, VCE = 1.0V IC = 100mA, VCE = 1.0V Collector-Emitter Saturation Voltage VCE(SAT) ⎯ 0.20 0.30 V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA Base-Emitter Saturation Voltage VBE(SAT) 0.65 0.85

0.95 V I

C = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 4.0 pF VCB = 5.0V, f = 1.0MHz, IE = 0 Input Capacitance Cibo ⎯ 8.5 pF VEB = 0.5V, f = 1.0MHz, IC = 0 Input Impedance hie 1.0 10 kΩ VCE = 10V, IC = 1.0mA, f = 1.0kHz Voltage Feedback Ratio hre 0.5 8.0 x 10 Small Signal Current Gain hfe 100 400 ⎯ Output Admittance hoe 1.0 40 μS Current Gain-Bandwidth Product fT 300 ⎯ MHz VCE = 20V, IC = 10mA, f = 100MHz SWITCHING CHARACTERISTICS Delay Time td ⎯ 35 ns VCC = 3.0V, IC = 10mA, VBE(off) = - 0.5V, IB1 = 1.0mA Rise Time tr ⎯ 35 ns Storage Time ts ⎯ 200 ns VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA Fall Time tf ⎯ 50 ns Notes: 4. Measured under pulsed condit ions. Pulse width = 300µs. Duty cycle ≤2% 0.02 0.04 0.06 0.08 0.10 0.12 0.14 01 2 3 45 V , COLLECTOR-EMITTER VOLTAGE (V) CE Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage I, COLLECTOR CURRENT (A)C I = 2 m AB I = 0.2mAB I = 0.4mAB I = 0.6mAB I = 0.8mAB I = 1.6mAB I = 1.4mAB I = 1.2mAB I = 1.8mAB I = 1 m AB 0.1 1 10 100 1,000 I , COLLECTOR CURRENT (mA)C Fig. 5 Typical DC Current Gain vs. Collector Current 100 200 300 400 h, D C CURRENT GAIN FE T = -55°CA T = 2 5 ° CA T = 150°CA T = 125°CA T = 85°CA V = 5 VCE

Document number: DS32038 Rev. 2 - 2 4 of 6 www.diodes.com April 2010 © Diodes Incorporated DST3904DJ NEW PRODUCT 0.1 1 10 100 1,000 I , COLLECTOR CURRENT (mA)C Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.01 0.1 V, COLLECTOR-EMITTER SATURATION CE(SAT) VOLTAGE (V) T = -55°CA I/ I = 1 0CB T = 25°CA T = 125°CA T = 150°CA T = 85°CA 0.01 0.1 V, COLLECTOR-EMITTER SATURATION CE(SAT) VOLTAGE (V) 0.1 1 10 100 1,000 I , COLLECTOR CURRENT (mA)C Fig. 7 Typical Collector-Emitter Saturation Voltage vs. Collector Current I/ I = 2 0CB T = -55°CA T = 25°CA T = 150°CA T = 85°CA T = 125°CA 0.1 1 10 100 1,000 I , COLLECTOR CURRENT (mA)C Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 V , BASE-EMI TTER TURN-ON VOLTAGE (V)BE(ON) V = 5 VCE T = 8 5 ° CA T = 2 5 ° CA T = -55°CA T = 125°CA T = 150°CA 0.1 1 10 100 1,000 I , COLLECTOR CURRENT (mA)C Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current 0.2 0.4 0.6 0.8 1.0 1.2 V , BASE-EMI TTER SATURATION VOLTAGE (V)BE(SAT) T = 8 5 ° CA T = 2 5 ° CA T = -55°CA T = 125°CA T = 150°CA Gain = 10 Fig. 10 Safe Operation Area (NPN) 0.1 1 10 100 V , COLLECTOR EMITTER CURRENT (V)CE 0.001 0.01 0.1 I, COLLECTOR CURRENT (A)C DC P = 100msW P = 10msW P = 1 m sW P = 100µsW T = 25°C Single, Non-Repetitive Pulse A

Document number: DS32038 Rev. 2 - 2 5 of 6 www.diodes.com April 2010 © Diodes Incorporated DST3904DJ NEW PRODUCT Package Outline Dimensions Suggest Pad Layout SOT-963 Dim Min Max Typ A 0.40 0.50 0.45 A1 0 0.05 - C 0.120 0.180 0.150 D 0.95 1.05 1.00 E 0.95 1.05 1.00 E1 0.75 0.85 0.80 L 0.05 0.15 0.10 b 0.10 0.20 0.15 e 0.35 Typ e1 0.70 Typ All Dimensions in mm Dimensions Value (in mm) C 0.350 X 0.200 Y 0.200 Y1 1.100 L c E D e b (6 places) A Y (6X) CC X (6X)

Document number: DS32038 Rev. 2 - 2 6 of 6 www.diodes.com April 2010 © Diodes Incorporated DST3904DJ NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com