DSS5320T DIODES | Alldatasheet

Document overview

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  • PDF pages: 5

Technical content

Features

  • Epitaxial Planar Die Construction
  • Ideal for Medium Power Amplification and Switching
  • “Lead Free”, RoHS Compliant (Note 1)
  • Halogen and Antimony Free. "Green" Device (Note 2)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SOT-23
  • Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish — Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.008 grams (approximate) Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DSS5320T-7 ZP4 7 8mm 3,000 Notes: 1. No purposefully added lead. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information Date Code Key Year 2009 2010 2011 2012 2013 2014 2015 2016 Code W X Y Z A B C D Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D ZP4 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) ZP4 YM Top View Device Symbol Pin-Out Top SOT-23 E B C EB C

Document number: DS31620 Rev. 2 - 2 2 of 5 www.diodes.com October 2010 © Diodes Incorporated DSS5320T Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -5 A Repetitive Peak Pulse Current (Note 4) ICRP -3 A Continuous Collector Current IC -2 A Base Current IB -0.5 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) @ TA = 25°C PD 600 mW Thermal Resistance, Junction to Ambient Air (Note 4) @ TA = 25°C RθJA 209 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 4. Operated under pulsed conditions: pulse width ≤100ms, duty cycle ≤ 0.25. 5. Device mounted on 15mm x 15mm x1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 0.2 0.4 0.6 0.8 05 0 1 0 0 1 5 0 2 0 0 T , AMBIENT TEMPERATURE ( C)A ° Fig. 1 Power Dissipation vs. Ambient Temperature P , POWER DISSIPATION (W)D R° C / WθJA = 209 0.1 1 10 100 V , COLLECTOR EMITTER VOLTAGE (V) Fig. 2 Safe Operating Area CE 0.001 0.01 0.1 100 I, COLLECTOR CURRENT (A)C

Document number: DS31620 Rev. 2 - 2 3 of 5 www.diodes.com October 2010 © Diodes Incorporated DSS5320T Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Cutoff Current ICBO ⎯ ⎯ -100 nA VCB = -20V, IE = 0 ⎯ ⎯ -50 μA VCB = -20V, IE = 0, TA = 150°C Emitter-Base Cutoff Current IEBO ⎯ ⎯ -100 nA VEB = -5V, IC = 0 Collector-Base Breakdown Voltage BVCBO -20 ⎯ ⎯ V IC = -100μA Collector-Emitter Breakdown Voltage (Note 6) BVCEO -20 ⎯ ⎯ V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -5 ⎯ ⎯ V IE = -100μA DC Current Gain (Note 5) hFE 220 ⎯ ⎯ VCE = -2V, IC = -0.1A 200 ⎯ ⎯ VCE = -2V, IC = -1A 150 ⎯ ⎯ VCE = -2V, IC = -2A 100 ⎯ ⎯ VCE = -2V, IC = -3A Collector-Emitter Saturation Voltage (Note 6) VCE(sat) ⎯ ⎯ -70 mV IC = -0.5A, IB = -50mA Equivalent On-Resistance RCE(sat) ⎯ ⎯ 105 mΩ IE = -2A, IB = -200mA Base-Emitter Saturation Voltage VBE(sat) ⎯ ⎯ -1.1 V IC = -2A, IB = -100mA ⎯ ⎯ -1.2 V IC = -3A, IB = -300mA Base-Emitter Turn-on Voltage VBE(on) ⎯ ⎯ -1.2 V VCE = -2V, IC = -1A Transition Frequency fT 100 180 ⎯ MHz VCE = -5V, IC = -100mA, f = 100MHz Output Capacitance Cob ⎯ 25 50 pF VCB = -10V, f = 1MHz Turn-On Time ton ⎯ 67 ⎯ ns VCC = -10V, IC = -1A, IB1 = -IB2 = -50mA Delay Time td ⎯ 23 ⎯ ns Rise Time tr ⎯ 44 ⎯ ns Turn-Off Time toff ⎯ 224 ⎯ ns Storage Time ts ⎯ 184 ⎯ ns Fall Time tf ⎯ 40 ⎯ ns Notes: 6. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 01 2 3 45 V , COLLECTOR-EMITTER VOLTAGE (V)CE Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage I = 5 m AB I, COLLECTOR CURRENT (A)C I = 4 m AB I = 3 m AB I = 2 m AB I = 1 m AB 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)C Fig. 4 Typical DC Current Gain vs. Collector Current 100 200 300 400 500 600 700 800 900 1,000h, D C CURRENT GAIN FE T = -55°CA V = - 2 VCE T = 25°CA T = 85°CA T = 1 2 5 ° CA T = 150°CA

Document number: DS31620 Rev. 2 - 2 4 of 5 www.diodes.com October 2010 © Diodes Incorporated DSS5320T 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)C Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.001 0.1 V, COLLECTOR-EMITTER SATURATION CE(SAT) VOLTAGE (V) 0.01 I/ I = 1 0CB T = -55°CA T = 25°CA T = 8 5 ° CA T = 125°CA T = 150°CA 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)C Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.001 0.1 V, COLLECTOR-EMITTER SATURATION CE(SAT) VOLTAGE (V) 0.01 I/ I = 2 0CB T = -55°CA T = 25°CA T = 85°CA T = 125°CA T = 150°CA 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)C Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.2 0.4 0.6 0.8 1.0 1.2 V , BASE-EMI TTER TURN-ON VOLTAGE (V)BE(ON) T = -55°CA V = - 2 VCE T = 25°CA T = 150°CA T = 125°CA T = 85°CA 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)C Fig. 8 Typical Base-Emitter Saturation Voltage vs. Collector Current 0.2 0.4 0.6 0.8 1.0 1.2V , BASE-EMI TTER SATURATION VOLTAGE (V)BE(SAT) T = -55°CA I = 1 0CB/I T = 2 5 ° CA T = 150°CA T = 125°CA T = 8 5 ° CA Package Outline Dimensions SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 α 0° 8° - All Dimensions in mm A M J L D F B C H K G

Document number: DS31620 Rev. 2 - 2 5 of 5 www.diodes.com October 2010 © Diodes Incorporated DSS5320T Suggested Pad Layout Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to ma ke modifications, enhancements, im provements, corrections or other changes without further notice to this doc ument and any product described herein. Diodes Incorporated does not assume any liabi lity arising out of the application or use of this document or any produc t described herein; neither does Diodes Incorporated convey any lic ense under its patent or trademark rights, nor the rights of others. Any Customer or user of this docum ent or products described herein i n such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customer s shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, dam ages, expenses, and attorney fee s arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicati on. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical co mponents in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or system s are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support devic e or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible fo r all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, lif e support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Di odes Incorporated products in such safety- critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com X E Y CZ