DSS5220T
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 7
Technical content
Features
BVCEO > -20V IC = -2A Continuous Collector Current ICM = -3A Peak Pulse Current Low Saturation Voltage VCE(sat) < -150mV @ -1A RCE(sat) = 113mΩ for a Low Equivalent On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ An Automotive-Compliant Part is Available Under Separate Datasheet (DSS5220TQ) Mechanical Data Package: SOT23 Package Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL - STD-202, Method 208 Weight: 0.008 grams (Approximate) Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity Per Reel DSS5220T-7 Standard ZP3 7 8 3,000 DSS5220T-13 Standard ZP3 13 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2016 …… 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code D …… I J K L M N O P R S Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT23 Top View Pin-Out Top View Device Symbol C E B C E B ZP3 = Product Type Marking Code (See Table Above) YM = Date Code Marking Y = Year (ex: J = 2022) M = Month (ex: 9 = September) ZP3
Document number: DS39392 Rev. 3 - 2 2 of 7 www.diodes.com January 2022 © Diodes Incorporated DSS5220T Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -7 V Peak Pulse Collector Current ICM -3 A Continuous Collector Current IC -2 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 600 mW (Note 6) 1.2 W Thermal Resistance, Junction to Ambient Air (Note 5) RθJA 209 °C/W (Note 6) 104 Thermal Resistance, Junction to Leads (Note 7) RθJL 75 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Notes: 5. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as note 5, except mounted on 25mm x 25mm 1oz copper. 7. Thermal resistance from junction to solder-point (at the end of collector lead). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Document number: DS39392 Rev. 3 - 2 4 of 7 www.diodes.com January 2022 © Diodes Incorporated DSS5220T Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO -20 V IC = -100µA Collector-Emitter Breakdown Voltage (Note 9) BVCEO -20 V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 V IE = -100µA Collector-Base Cutoff Current ICBO -100 nA VCB = -20V, IE = 0 -50 µA VCB = -20V, IE = 0, TJ = +150°C Emitter-Base Cutoff Current IEBO -100 nA VEB = -6V, IC = 0 ON CHARACTERISTICS (Note 9) DC Current Gain hFE 225 VCE = -2V, IC = -100mA 225 VCE = -2V, IC = -500mA 200 VCE = -2V, IC = -1A 150 VCE = -2V, IC = -2A Collector-Emitter Saturation Voltage VCE(sat) -80 mV IC = -500mA, IB = -50mA Equivalent On-Resistance RCE(sat) 113 m IC = -2A, IB = -200mA Base-Emitter Saturation Voltage VBE(sat) -1.1 V IC = -2A, IB = -100mA Base-Emitter Turn-on Voltage VBE(on) -1.2 V VCE = -2V, IC = -1A SMALL SIGNAL CHARACTERISTICS Transition Frequency fT 100 MHz VCE = -5V, IC = -100mA, f = 100MHz Collector-Base Capacitance Ccbo 50 pF VCB = -10V, f = 1MHz Turn-On Time ton 190 ns VCC = -10V, IC = -100mA, IB1 = -IB2 = -10mA Delay Time td 108 ns Rise Time tr 82 ns Turn-Off Time toff 205 ns Storage Time ts 156 ns Fall Time tf 49 ns Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Document number: DS39392 Rev. 3 - 2 5 of 7 www.diodes.com January 2022 © Diodes Incorporated DSS5220T Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Document number: DS39392 Rev. 3 - 2 6 of 7 www.diodes.com January 2022 © Diodes Incorporated DSS5220T Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -- All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 J K1 K GAUGE PLANE 0.25 H L M All 7° A C B D GF a X Y Y1 C
Document number: DS39392 Rev. 3 - 2 7 of 7 www.diodes.com January 2022 © Diodes Incorporated DSS5220T IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTIC ULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operati on of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engi neering customers and users who design with Diodes products. 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