DSS4240T

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 8

Technical content

Features

  • BVCEO > 40V
  • IC = 2A High Continuous Collector Current
  • ICM = 3A Peak Pulse Current
  • Low Saturation Voltage 180mV Max @ IC = 1A
  • RCE(SAT) = 60mΩ at 0.5A for a Low Equivalent On-Resistance
  • 730mW Power Dissipation
  • Complimentary PNP Type: DSS5240T
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ Mechanical Data
  • Package: SOT23
  • Package Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish — Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208
  • Weight: 0.008 grams (Approximate) Ordering Information (Note 4) Orderable Part Number Package Marking Reel Size (inches) Tape Width (mm) Packing Qty. Carier DSS4240T-7 SOT23 ZN2 7 8 3000 Reel DSS4240T-13 SOT23 ZN2 13 8 10,000 Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Marking Information Date Code Key Year 2008 - 2025 2026 2027 2028 2029 2030 2031 2032 2033 2034 Code V - M N P R S T U V W X Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D SOT23 Device Symbol Top View Pin Configuration Top View ZN2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: M = 2025) M = Month (ex: 9 = September) ZN2 YM C E B C E B THE DSS4240T IS NOT RECOMMENDED FOR NEW DESIGNS. PLEASE USE THE ZXTN4240F.

Document number: DS31623 Rev. 7 - 3 2 of 8 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. DSS4240T Absolute Maximum Ratings (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 5 V Peak Pulse Collector Current ICM 3 A Continuous Collector Current IC 2 A Peak Base Current IBM 0.3 A Thermal Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 730 mW Power Dissipation (Note 6) PD 600 mW Thermal Resistance, Junction to Ambient Air (Note 5) RJA 171 ° C/W Thermal Resistance, Junction to Ambient Air (Note 6) RJA 209 ° C/W Thermal Resistance, Junction to Lead (Note 7) RJL 75 ° C/W Thermal Resistance, Junction to Case (Note 8) RJC 51 ° C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 9) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge — Human Body Model ESD HBM 4000 V 3A Electrostatic Discharge — Machine Model ESD MM 400 V C Electrostatic Discharge — Charged Device Model ESD CDM 1,000 V IV Notes: 5. For a device mounted with the collector lead on 15mm × 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted on minimum recommended pad layout. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Thermal resistance from junction to the top of the case. 9. Refer to JEDEC specification JESD22-A114, JESD22-A115 and JESD22-C101.

Document number: DS31623 Rev. 7 - 3 3 of 8 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. DSS4240T Thermal Characteristics and Derating Information 100m 1 1010m 100m 15mm x 15mm 1oz Copper Single Pulse Tamb=25° C VCE(sat) Limited 100µ s 1ms 10ms 100ms DC Safe Operating Area -IC Collector Current (A) -VCE Collector-Emitter Voltage (V) 0 20 40 60 80 100 120 140 1600.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 15mm x 15mm 1oz Copper Derating Curve Temperature (° C) Max Power Dissipation (W) 100µ 1m 10m 100m 1 10 100 1k0 120

160 Tamb=25° C

Transient Thermal Impedance D=0.5 D=0.2 D=0.1 Single Pulse D=0.05 Thermal Resistance (° C/W)Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k 100 Single Pulse Tamb=25° C 15mm x 15mm 1oz Copper Pulse Power Dissipation Pulse Width (s) Maximum Power (W) 25oC (oC) 100μs 25oC 25oC 100μ 100μ

Document number: DS31623 Rev. 7 - 3 4 of 8 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. DSS4240T Electrical Characteristics (@TA = +25° C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Conditions OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO 40 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO 40 — — V IC = 10mA Emitter-Base Breakdown Voltage BVEBO 5 — — V IE = 100µA Collector-Base Cutoff Current ICBO — — 100 nA VCB = 30V, IE = 0 — — 50 µA VCB = 30V, IE = 0, TA = +150°C Emitter-Base Cutoff Current IEBO — — 100 nA VEB = 4V, IC = 0 ON CHARACTERISTICS (Note 7) DC Current Gain hFE 350 — — VCE = 2V, IC = 0.1A 300 — — VCE = 2V, IC = 0.5A 300 — — VCE = 2V, IC = 1A 150 — — VCE = 2V, IC = 2A Collector-Emitter Saturation Voltage VCE(sat) — — 70 mV IC = 100mA, IB = 1mA — 30 100 IC = 500mA, IB = 50mA — — 180 IC = 750mA, IB = 15mA — — 180 IC = 1A, IB = 50mA — — 320 IC = 2A, IB = 200mA Equivalent On-Resistance RCE(sat) — 60 200 mΩ IC = 500mA, IB = 50mA Base-Emitter Saturation Voltage VBE(sat) — — 1.1 V IC = 2A, IB = 200mA Base-Emitter Turn-on Voltage VBE(on) — — 0.75 V VCE = 2V, IC = 100mA SMALL SIGNAL CHARACTERISTICS Transition Frequency fT 100 — — MHz VCE = 10V, IC = 100mA, f = 100MHz Output Capacitance Cob — — 20 pF VCB = 10V, f = 1MHz Note: 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 8. Thermal resistance from junction to the top of the case. 9. Refer to JEDEC specification JESD22-A114, JESD22-A115 and JESD22-C101. 10. Measured under pulsed conditions. Pulse width  300µ s. Duty cycle  2%.

Document number: DS31623 Rev. 7 - 3 5 of 8 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. DSS4240T Typical Electrical Characteristics (@TA = +25° C, unless otherwise specified.) 0 2 4 6 8 10 V , COLLECTOR-EMITTER VOLTAGE (V)CE Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2.0 I , COLLECTOR CURRENT (A)C 1.8 I = 1mAB I = 2mAB I = 3mAB I = 4mAB I = 5mAB 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)C Fig. 3 Typical DC Current Gain vs. Collector Current 100 1,000h , DC CURRENT GAIN FE T = 150 癈A T = 25 癈A T = -55 癈A T = 85 癈A V = 2VCE 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)C Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.001 0.01 0.1 V , COLLECTOR-EMITTER SATURATION CE(SAT) VOLTAGE (V) I /I = 10CB T = 85 癈A T = 25 癈A T = -55 癈A T = 150 癈A 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)C Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.2 0.4 0.6 0.8 1.0 1.2 V , BASE-EMITTER TURN-ON VOLTAGE (V)BE(ON) T = 150 癈A T = 25 癈A T = -55 癈A T = 85 癈A V = 2VCE 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)C Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 0.2 0.4 0.6 0.8 1.0 1.2V , BASE-EMITTER SATURATION VOLTAGE (V)BE(SAT) T = 150 癈A T = 25 癈A T = -55 癈A T = 85 癈A I = 10CB/I 0.1 1 10 100 V , REVERSE VOLTAGE (V)R Fig. 7 Typical Capacitance Characteristics 100 1,000CAPACITANCE (pF) Cibo Cobo f = 1MHz VBE(sat), VBE(on), VCE(sat), TA = -55oC TA = 25oC oC oC TA = -55oC TA = 25oC TA = 85oC TA = 150oC TA = -55oC TA = 25oC TA = 85oC TA = 150oC TA = 150oC TA = -55oC oC oC

Document number: DS31623 Rev. 7 - 3 6 of 8 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. DSS4240T Typical Electrical Characteristics (@TA = +25° C, unless otherwise specified.) 0 10 20 30 40 50 60 70 80 90 100 I , COLLECTOR CURRENT (mA)C Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current 100 1,000f , GAIN-BANDWIDTH PRODUCT (MHz)T V = 10V f = 100MHz CE

Document number: DS31623 Rev. 7 - 3 7 of 8 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. DSS4240T Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° — All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Dimensions Value (in mm) C 2.0 X 0.8 X1 1.35 Y 0.9 Y1 2.9 J K1 K GAUGE PLANE 0.25 H L M All 7° A C B D GF a X Y Y1 C

Document number: DS31623 Rev. 7 - 3 8 of 8 www.diodes.com February 2025 © 2025 Copyright Diodes Incorporated. All Rights Reserved. DSS4240T IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICUL AR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes ’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. Diodes’ products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which in corporate Diodes’ products, comply the applicable legal and regulatory requirements as well as safety and functional - safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality co ntrol techniqu es, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications. 3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. 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