DSS4220V

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 5

Technical content

Features

  • Epitaxial Planar Die Construction
  • Complementary PNP Type Available (DSS5220V)
  • Low Collector-Emitter Saturation Voltage, V CE(SAT)
  • High Current Gain (h FE) at High IC
  • Surface Mount Package Suited for Automated Assembly
  • Ultra-Small Surface Mount Package
  • Lead Free/RoHS Compliant (Note 1)
  • "Green Device" (Note 2) Mechanical Data
  • Case: SOT-563
  • Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020D
  • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Marking Information: See Page 4
  • Ordering Information: See Page 4
  • Weight: 0.003 grams (approximate) Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current - Continuous IC 2 A Peak Pulse Collector Current ICM 4 A Base Current (DC) IB 0.3 A Peak Base Current IBM 0.6 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) @ TA = 25°C P D 600 mW Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C RθJA 208 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 1. No purposefully added lead. 3. Device mounted on FR-4 PCB with minimum recommended pad layout. Top View Bottom View Device Schematic Pin Out Configuration 123 6541, 2, 5, 6

Document number: DS31659 Rev. 2 - 2 2 of 5 www.diodes.com March 2009 © Diodes Incorporated DSS4220V NEW PRODUCT Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage V(BR)CBO 20 ⎯ ⎯ V IC = 100μA, IE = 0 Collector-Emitter Breakdown Voltage (Note 4) V(BR)CEO 20 ⎯ ⎯ V IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5 ⎯ ⎯ V IE = 100μA, IC = 0 Collector Cutoff Current ICBO ⎯ ⎯ 100 nA μA VCB = 20V, IE = 0 VCB = 20V, IE = 0, TA = 150°C Collector Cutoff Current ICES ⎯ ⎯ 100 nA VCE = 20V, VBE = 0 Emitter Cutoff Current IEBO ⎯ ⎯ 100 nA VEB = 5V, IC = 0 ON CHARACTERISTICS (Note 4) DC Current Gain hFE 220 220 220 200 120 V CE = 2V, IC = 1mA VCE = 2V, IC = 100mA VCE = 2V, IC = 500mA VCE = 2V, IC = 1A VCE = 2V, IC = 2A Collector-Emitter Saturation Voltage VCE(SAT) 180 175 355 350 mV IC = 100mA, IB = 1mA IC = 500mA, IB = 50mA IC = 1A, IB = 50mA IC = 1A, IB = 100mA IC = 2A, IB = 100mA IC = 2A, IB = 200mA Collector-Emitter Saturation Resistance RCE(SAT) ⎯ ⎯ 175 m Ω IC = 1A, IB = 100mA Base-Emitter Saturation Voltage VBE(SAT) ⎯ ⎯ 1.1

1.2 V I

C = 1A, IB = 50mA IC = 1A, IB = 100mA Base-Emitter Turn On Voltage VBE(ON) ⎯ ⎯ 1.1 V VCE = 5V, IC = 1A SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ 16 ⎯ pF VCB = 10V, f = 1.0MHz Current Gain-Bandwidth Product fT ⎯ 260 ⎯ MHz VCE = 10V, IC = 50mA, f = 100MHz SWITCHING CHARACTERISTICS Turn-On Time ton ⎯ 60 ⎯ ns VCC = 10V IC = 1A, IB1 = IB2 = 50mA Delay Time td ⎯ 20 ⎯ ns Rise Time tr ⎯ 40 ⎯ ns Turn-Off Time toff ⎯ 225 ⎯ ns Storage Time ts ⎯ 205 ⎯ ns Fall Time tf ⎯ 20 ⎯ ns Notes: 4. Measured under puls ed conditions. Pulse width = 300μs. Duty cycle ≤2%. 100 400 25 50 75 100 125 150 P , POWER DISSIPATION (mW)D T , AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) A 600 R = 208°C/WθJA 300 500 200 0.1 1 10 100 V , COLLECTOR-EMITTER VOLTAGE (V)CE Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage (Note 3) 0.1 10I, COLLECTOR CURRENT (A)C 0.01 Pw = 100ms Pw = 10ms Pw = 1ms DC

Document number: DS31659 Rev. 2 - 2 3 of 5 www.diodes.com March 2009 © Diodes Incorporated DSS4220V NEW PRODUCT 1 10 100 10,000 I , COLLECTOR CURRENT (mA)C Fig. 3 Typical DC Current Gain vs. Collector Current 1,000 200 400 600 800 1,200h, D C CURRENT GAIN FE 1,000 T = 150°CA T = 25°CA T = -55°CA T = 85°CA V = 2 VCE 1 10 100 10,000 I , COLLECTOR CURRENT (mA)C Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.1 1,000 0.001 0.01 0.1 V, COLLECTOR-EMITTER SATURATION CE(SAT) VOLTAGE (V) I/ I = 1 0CB T = 85°CA T = 25°CA T = -55°CA T = 150°CA 0.1 10 100 1,000 10,000 I , COLLECTOR CURRENT (mA)C Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.2 0.4 0.6 0.8 1.0 1.2 V , BASE-EMI TTER TURN-ON VOLTAGE (V)BE(ON) T = 150°CA T = 25°CA T = -55°CA T = 85°CA V = 5 VCE 0.1 10 100 10,000 I , COLLECTOR CURRENT (mA)C Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 11 ,000 0.2 0.4 0.6 0.8 1.0 1.2V , BASE-EMI TTER SATURATION VOLTAGE (V)BE(SAT) T = 1 5 0 ° CA T = 2 5 ° CA T = - 5 5 ° CA T = 8 5 ° CA I = 1 0CB/I 100 1,000 0.1 1 10 100 V , REVERSE VOLTAGE (V)R Fig. 7 Typical Capacitance Characteristics CAPACITANCE (pF) Cibo Cobo f = 1MHz

Document number: DS31659 Rev. 2 - 2 4 of 5 www.diodes.com March 2009 © Diodes Incorporated DSS4220V NEW PRODUCT 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE Fig. 8 Transient Thermal Response (Note 3) t , PULSE DURATION TIME (s)1 T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 166°C/W θ θ JA JA P(pk) D = 0.7 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.5 Ordering Information (Note 6) Part Number Case Packaging DSS4220V-7 SOT-563 3000/Tape & Reel Marking Information Date Code Key Year 2008 2009 2010 2011 2012 2013 2014 2015 Code V W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Package Outline Dimensions SOT-563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D - - 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm ZN7 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) A M L B C H K G D ZN7 YM

Document number: DS31659 Rev. 2 - 2 5 of 5 www.diodes.com March 2009 © Diodes Incorporated DSS4220V NEW PRODUCT Suggested Pad Layout IMPORTANT NOTICE Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. Diodes Incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 X Z Y C2C2 G