DSS3540M DIODES | Alldatasheet

Document overview

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  • PDF pages: 5

Technical content

Features

  • Low Collector-Emitter Saturation Voltage, V CE(sat)
  • Ultra-Small Leadless Surface Mount Package
  • ESD: HBM 8kV, MM 400V
  • Complementary NPN Type Available (DSS2540M)
  • “Lead Free”, RoHS Compliant (Note 1)
  • Halogen and Antimony Free, "Green" Device (Note 2) Mechanical Data
  • Case: DFN1006-3
  • Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.0009 grams (Approximate) Ordering Information (Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DSS3540M-7 TD 7 8mm 3,000 DSS3540M-7B TD 7 8mm 10,000 Notes: 1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com. Marking Information Bottom View Top View Device Schematic DFN1006-3 C E B Device Symbol TD = Product Type Marking Code C E B TD TD Top View Dot Denotes Collector Side DSS3540M-7 Top View Bar Denotes Base and Emitter Side DSS3540M-7B

Document number: DS31821 Rev. 2 - 2 2 of 5 www.diodes.com January 2011 © Diodes Incorporated DSS3540M Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -6 V Collector Current - Continuous IC -500 mA Peak Pulse Collector Current ICM -1 A Peak Base Current IBM -100 mA Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) @ TA = 25°C P D 250 mW Thermal Resistance, Junction to Ambient (Note 4) @ TA = 25°C RθJA 500 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout. Fig. 1 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.00001 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 500°C/W θ θ JA JA P(pk) D = 0.7 D = 0.5 D = 0.3 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.1 0.1 100 1,000 1E-06 0.0001 0.01 1 100 10,000 Fig. 2 Single Pulse Maximum Power Dissipation t , PULSE DURATION TIME (s)1 P(pk), PEAK TRANSIENT POWER (W) Single Pulse T - T = P * R ( t )JA J A θ R (t) = r(t) * θJA R R = 500°C/W θ θ JA JA 0.05 0.10 0.15 0.30 0 20 40 60 80 100 120 140 160 T , AMBIENT TEMPERATURE ( C)A ° Fig. 3 Power Dissipation vs. Ambient Temperature (Note 4) P , POWER DISSIPATION (W)D R = 500°C/WθJA 0.20 0.25

Document number: DS31821 Rev. 2 - 2 3 of 5 www.diodes.com January 2011 © Diodes Incorporated DSS3540M Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO -40 ⎯ ⎯ V IC = -100μA, IE = 0 Collector-Emitter Breakdown Voltage (Note 5) BVCEO -40 ⎯ ⎯ V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -6 ⎯ ⎯ V IE = -100μA, IC = 0 Collector Cutoff Current ICBO ⎯ ⎯ -100 -50 nA μA VCB = -30V, IE = 0 VCB = -30V, IE = 0, TA = 150°C Emitter Cutoff Current IEBO ⎯ ⎯ -100 nA VEB = -5V, IC = 0 ON CHARACTERISTICS (Note 5) DC Current Gain hFE 200 150 VCE = -2V, IC = -10mA VCE = -2V, IC = -100mA VCE = -2V, IC = -500mA Collector-Emitter Saturation Voltage VCE(sat) -50 -130 -200 -350 mV IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5mA IC = -200mA, IB = -10mA IC = -500mA, IB = -50mA Collector-Emitter Saturation Resistance RCE(sat) ⎯ ⎯ 700 m Ω IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(sat) ⎯ ⎯ -1.2 V IC = -500mA, IB = -50mA Base-Emitter Turn On Voltage VBE(on) ⎯ ⎯ -1.1 V VCE = -2V, IC = -100mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo ⎯ ⎯ 10 pF VCB = -10V, f = 1.0MHz Current Gain-Bandwidth Product fT 100 ⎯ ⎯ MHz VCE = -5V, IC = -100mA, f = 100MHz Notes: 5. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤2%. 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 012345 -V , COLLECTOR-EMITTER VOLTAGE (V) CE Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage -I , COLLECTOR CURRENT (A)C I = - 1 m AB I = - 2 m AB I = - 3 m AB I = - 4 m AB I = - 5 m AB 100 200 300 400 500 600 700 800 0.1 1 10 100 1,000 -I , COLLECTOR CURRENT (mA)C Fig. 5 Typical DC Current Gain vs. Collector Current h, D C CURRENT GAIN FE T = -55°CA T = 25°CA T = 85°CA T = 125°CA T = 150°CA

Document number: DS31821 Rev. 2 - 2 4 of 5 www.diodes.com January 2011 © Diodes Incorporated DSS3540M 0.01 0.1 0.1 1 10 100 1,000 -I , COLLECTOR CURRENT (mA)C Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current -V , COLLECTOR-EMITTER SATURATION CE(SAT) VOLTAGE (V) T = -55°CA I/ I = 2 0CB T = 25°CA T = 85°CA T = 125°CA T = 150°CA 0.1 1 10 100 1,000 0.2 0.4 0.6 0.8 1.0-V , BASE-EMI TTER SATURATION VOLTAGE (V)BE(SAT) 1.2 -I , COLLECTOR CURRENT (mA)C Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current I = 2 0CB/I T = 150°CA T = 125°CA T = 8 5 ° CA T = 2 5 ° CA T = -55°CA 0.1 1 10 100 1,000 0.2 0.4 0.6 0.8 1.2 -V , BASE-EMI TTER TURN-ON VOLTAGE (V)BE(ON) 1.0 -I , COLLECTOR CURRENT (mA)C Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current V = - 2 VCE T = 150°CA T = 125°CA T = 85°CA T = 25°CA T = -55°CA 0.1 100 1,000 0.1 1 10 100 1,000 -I , COLLECTOR CURRENT (mA)C Fig. 9 Typical Collector-Emitter Saturation Resistance vs. Collector Current -R , COLLECTOR-EMITTER SATURATION RESISTANCE CE(SAT) ()Ω T = -55°CA I/ I = 2 0CB T = 25°CA T = 85°CA T = 125°CA T = 150°CA Package Outline Dimensions DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.03 b1 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e ⎯ ⎯ 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 ⎯ ⎯ 0.40 All Dimensions in mm E b2 L1L3 D e A

Document number: DS31821 Rev. 2 - 2 5 of 5 www.diodes.com January 2011 © Diodes Incorporated DSS3540M Suggested Pad Layout IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com Dimensions Value (in mm) Z 1.1 G1 0.3 G2 0.2 X 0.7 X1 0.25 Y 0.4 C 0.7 Y C G2X Z