DSS3515M
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 8
Technical content
Features
BVCEO > -15V IC = -500mA High Collector Current ICM = -1A Peak Pulse Current PD = 1000mW Power Dissipation Low Collector-Emitter Saturation Voltage, VCE(sat) 0.60mm2 Package Footprint, 13 Times Smaller than SOT23 0.5mm Height Package Minimizing Off-Board Profile Complementary NPN Type DIODES™ DSS2515M Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ An automotive-compliant part is available under separate datasheet (DSS3515MQ) Mechanical Data Package: X1-DFN1006-3 Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu. Solderable per MIL-STD-202, Method 208 Weight: 0.0009 grams (Approximate) Ordering Information (Note 4) Part Number Package Marking Reel Size (inches) Tape Width (mm) Packing Qty. Carrier DSS3515M-7 X1-DFN1006-3 TB 7 8 3,000 Reel DSS3515M-7B X1-DFN1006-3 TB 7 8 10,000 Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen - and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes -packaging/. Bottom View Top View Device Schematic X1-DFN1006-3 Device Symbol C E B C E B
Document number: DS31819 Rev. 5 - 2 2 of 8 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DSS3515M Marking Information DSS3515M-7 DSS3515M-7B TB TB = Product Type Marking Code Top View Bar Denotes Base and Emitter Side TB = Product Type Marking Code Top View Bar Denotes Base and Emitter Side TB TB TB TB TB TB TB TB TB TB TB TB TB
Document number: DS31819 Rev. 5 - 2 3 of 8 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DSS3515M Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -15 V Emitter-Base Voltage VEBO -6 V Collector Current - Continuous IC -500 mA Peak Pulse Collector Current ICM -1 A Peak Base Current IBM -100 mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 400 mW (Note 6) 1000 Thermal Resistance, Junction to Ambient (Note 5) RθJA 310 °C/W (Note 6) 120 Thermal Resistance, Junction to Lead (Note 7) RθJL 120 °C/W Operating and Storage and Temperature Range TJ, TSTG -55 to +150 °C ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 200 V B Notes: 5. For the device mounted on minimum recommended pad layout 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. 6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Document number: DS31819 Rev. 5 - 2 4 of 8 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DSS3515M Thermal Characteristics 0.000001 0.0001 0.01 1 100 10,000 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE t1, PULSE DURATION TIME (sec) Fig. 1 Transient Thermal Resistance R (t) = r(t) * R JA JA R = 310°C/WJA Duty Cycle, D = t1/ t2 D = 0.5 D = 0.7 D = 0.9 D = 0.3 D = 0.1 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse 1,000 1E-06 0.0001 0.01 1 100 10,000 100 0.1 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation P , PEAK TRANSIENT POIWER (W)(PK) Single Pulse R = 310° C/WJA R = r * R JA(t) (t) JA T - T = P * RJ A JA(t)
Document number: DS31819 Rev. 5 - 2 5 of 8 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DSS3515M Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVCBO -15 — — V IC = -100µA, IE = 0 Collector-Emitter Breakdown Voltage (Note 9) BVCEO -15 — — V IC = -10mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -6 — — V IE = -100µA, IC = 0 Collector Cutoff Current ICBO — -100 -50 nA µA VCB = -15V, IE = 0 VCB = -15V, IE = 0, TA = +150°C Emitter Cutoff Current IEBO — — -100 nA VEB = -5V, IC = 0 ON CHARACTERISTICS (Note 9) DC Current Gain hFE 200 150 VCE = -2V, IC = -10mA VCE = -2V, IC = -100mA VCE = -2V, IC = -500mA Collector-Emitter Saturation Voltage VCE(sat) -25 -150 -250 mV IC = -10mA, IB = -0.5mA IC = -200mA, IB = -10mA IC = -500mA, IB = -50mA Collector-Emitter Saturation Resistance RCE(sat) — — 500 mΩ IC = -500mA, IB = -50mA Base-Emitter Saturation Voltage VBE(sat) — — -1.1 V IC = -500mA, IB = -50mA Base-Emitter Turn On Voltage VBE(on) — — -0.9 V VCE = -2V, IC = -100mA SMALL SIGNAL CHARACTERISTICS Output Capacitance Cobo — — 10 pF VCB = -10V, f = 1.0MHz Current Gain-Bandwidth Product fT 100 340 — MHz VCE = -5V, IC = -100mA, f = 100MHz Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Document number: DS31819 Rev. 5 - 2 6 of 8 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DSS3515M Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 0.20 0.40 0.60 0.80 1.00 0 1 2 3 4 5 -V , COLLECTOR-EMITTER VOLTAGE (V)CE Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage -I , COLLECTOR CURRENT (A)C I = -1mAB I = -2mAB I = -3mAB I = -4mAB I = -5mAB 1 10 100 1,000 -I , COLLECTOR CURRENT (mA)C Fig. 5 Typical DC Current Gain vs. Collector Current 100 200 300 400 500 600 700 800 h , DC CURRENT GAIN FE T = -55 蚓A T = 25 蚓A T = 85 蚓A T = 125 蚓A T = 150 蚓A 1 10 100 1,000 -I , COLLECTOR CURRENT (mA)C Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current 0.01 0.1 -V , COLLECTOR-EMITTER SATURATION CE(SAT) VOLTAGE (V) T = -55 蚓A I /I = 10CB T = 25 蚓A T = 85 蚓A T = 125 蚓A T = 150 蚓A 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 1,000 -I , COLLECTOR CURRENT (mA)C Fig. 7 Typical Base-Emitter Saturation Voltage vs. Collector Current -V , BASE-EMITTER SATURATION VOLTAGE (V)BE(SAT) I = 10CB/I T = 150 蚓A T = 125 蚓A T = 85 蚓A T = 25 蚓A T = -55 蚓A 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100 1,000 -I , COLLECTOR CURRENT (mA)C Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current -V , BASE-EMITTER TURN-ON VOLTAGE (V)BE(ON) V = -2VCE T = 150 蚓A T = 125 蚓A T = 85 蚓A T = 25 蚓A T = -55 蚓A 0.1 100 0.1 1 10 100 1,000 -I , COLLECTOR CURRENT (mA)C Fig. 9 Typical Collector-Emitter Saturation Resistance vs. Collector Current -R , COLLECTOR-EMITTER SATURATION RESISTANCE CE(SAT) ( ) T = -55 蚓A I /I = 20CB T = 25 蚓A T = 85 蚓A T = 125 蚓A T = 150 蚓A Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage Fig. 4 Typical DC Current Gain vs. Collector Current Fig. 5 Typical Collector-Emitter Saturation Voltage vs. Collector Current Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current Fig. 7 Typical Base-Emitter Turn-On Voltage vs. Collector Current Fig. 8 Typical Collector-Emitter Saturation Resistance vs. Collector Current -VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) -VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(on), BASE-EMITTER TURN-ON VOLTAGE (V) -RCE(sat), COLLECTOR-EMITTER SATURATION RESISTANCE (Ω) TA = -55°C TA = 25°C TA = 150°C TA = 85°C TA = 125°C TA = -55°C TA = 25°C TA = 150°C TA = 85°C TA = 125°C TA = -55°C TA = 25°C TA = 150°C TA = 85°C TA = 125°C TA = -55°C TA = 25°C TA = 150°C TA = 85°C TA = 125°C TA = -55°C TA = 25°C TA = 150°C TA = 85°C TA = 125°C
Document number: DS31819 Rev. 5 - 2 7 of 8 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DSS3515M Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. X1-DFN1006-3 X1-DFN1006-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.075 1.00 E 0.55 0.675 0.60 e - - 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 - - 0.40 z 0.02 0.08 0.05 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. X1-DFN1006-3 Dimensions Value (in mm) C 0.70 G1 0.30 G2 0.20 X 0.40 X1 1.10 Y 0.25 Y1 0.70 L3 L1L2 e b D E A z Seating Plane Pin #1 ID C X Y
Document number: DS31819 Rev. 5 - 2 8 of 8 www.diodes.com January 2023 © 2023 Copyright Diodes Incorporated. All Rights Reserved. DSS3515M IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON -INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informat ional purpose only and is provided only to illustrate the operation of Diodes’ products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes’ products. 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