DSS30101L

Document overview

  • Manufacturer or author: Diodes Incorporated
  • PDF pages: 6

Technical content

Features

  • Ideal for Medium Power Amplification and Switching
  • Ultra Low Collector-Emitter Saturation Voltage
  • Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
  • “Green” Device (Note 2)
  • ESD rating: 400V-MM, 8KV-HBM Mechanical Data
  • Case: SOT-23
  • Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Finish — Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208
  • Weight: 0.008 grams (approximate)

Ordering Information

Part Number Case Packaging DSS30101L-7 SOT-23 3000/Tape & Reel Notes: 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com Marking Information Date Code Key Year 2008 2009 2010 2011 2012 2013 2014 2015 Code V W X Y Z A B C Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View EB C ZN3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) ZN3 YM E B C Device Symbol Pin Configuration

Document number: DS31588 Rev. 3 - 2 2 of 6 www.diodes.com August 2010 © Diodes Incorporated DSS30101L ADVANCE INFORMATION Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) @ TA = 25°C PD 600 mW Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C RθJA 209 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Notes: 3. Device mounted on FR-4 PCB MRP 0.2 0.4 0.6 0.8 0 20 40 60 80 100 120 140 160 T , AMBIENT TEMPERATURE ( C)A ° Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3) P , POWER DISSIPATION (W)D R = 209°C/WθJA 100 200 300 400 0.00001 0.001 0.1 10 1,000 Fig. 2 Single Pulse Maximum Power Dissipation t , PULSE DURATION TIME (s)1 P(pk), PEAK TRANSIENT POWER (W) Single Pulse T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 175°C/W θ θ JA JA Fig. 3 Transient Thermal Response t , PULSE DURATION TIME (s)1 0.001 0.01 0.1 r(t), TRANSIENT THERMAL RESISTANCE T - T = P * R ( t ) Duty Cycle, D = t /t JA J A θ R (t) = r(t) * θJA R R = 175°C/W θ θ JA JA P(pk) D = 0.7 D = 0.5 D = 0.3 D = 0.05 D = 0.02 D = 0.01 D = 0.005 D = Single Pulse D = 0.9 D = 0.1

Document number: DS31588 Rev. 3 - 2 3 of 6 www.diodes.com August 2010 © Diodes Incorporated DSS30101L ADVANCE INFORMATION Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Voltage V(BR)CBO 50 ⎯ ⎯ V IC = 100μA Collector-Emitter Breakdown Voltage (Note 4) V(BR)CEO 30 ⎯ ⎯ V IC = 10mA Emitter-Base Breakdown Voltage V(BR)EBO 5 ⎯ ⎯ V IE = 100μA Collector-Base Cutoff Current ICBO ⎯ ⎯ 100 nA VCB = 30V, IE = 0 ⎯ ⎯ 50 μA VCB = 30V, IE = 0, TA = 150°C Emitter-Base Cutoff Current IEBO ⎯ ⎯ 100 nA VEB = 4V, IC = 0 DC Current Gain (Note 4) hFE 300 ⎯ ⎯ VCE = 5V, IC = 50mA 300 450 900 VCE = 5V, IC = 0.5A 200 ⎯ ⎯ V CE = 5V, IC = 1A Collector-Emitter Saturation Voltage (Note 4) VCE(sat) ⎯ ⎯ 75 mV IC = 0.1A, IB = 1mA ⎯ ⎯ 125 IC = 0.5A, IB = 50mA ⎯ ⎯ 200 IC = 1.0A, IB = 100mA Equivalent On-Resistance (Note 4) RCE(sat) ⎯ ⎯ 200 mΩ IE = 1A, IB = 100mA Base-Emitter Saturation Voltage (Note 4) VBE(sat) ⎯ 0.93 1.1 V IC = 1A, IB = 100mA Base-Emitter Turn-on Voltage (Note 4) VBE(on) ⎯ 0.80 1.1 V VCE = 2V, IC = 1A Transition Frequency fT 100 250 ⎯ MHz VCE = 5V, IC = 100mA, f = 100MHz Output Capacitance Cobo ⎯ 9 15 pF VCB = 10V, f = 1MHz Input Capacitance Cibo ⎯ 65 ⎯ pF VEB = 5V, f = 1MHz Turn-On Time ton ⎯ 57 ⎯ ns VCC = 5V, IC = 500mA, IB1 = -IB2 = 50mA Delay Time td ⎯ 19 ⎯ ns Rise Time tr ⎯ 38 ⎯ ns Turn-Off Time toff ⎯ 340 ⎯ ns Storage Time ts ⎯ 315 ⎯ ns Fall Time tf ⎯ 25 ⎯ ns Notes: 4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 01 2345 V , COLLECTOR-EMITTER VOLTAGE (V)CE Fig. 4 Typical Collector Current vs. Collector-Emitter Voltage I, COLLECTOR CURRENT (A)C I = 1 m AB I = 2 m AB I = 3 m AB I = 4 m AB I = 5 m AB 100 200 300 400 500 600 700 800 900 1,000 1,100 1,200 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A) C Fig. 5 Typical DC Current Gain vs. Collector Current h, D C CURRENT GAIN FE T = -55°CA T = 25°CA T = 85°CA T = 125°CA T = 150°CA

Document number: DS31588 Rev. 3 - 2 4 of 6 www.diodes.com August 2010 © Diodes Incorporated DSS30101L ADVANCE INFORMATION 0.1 0.2 0.3 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)C Fig. 6 Typical Collector-Emitter Saturation Voltage vs. Collector Current V, COLLECTOR-EMITTER SATURATION CE(SAT) VOLTAGE (V) T = -55°CA I/ I = 1 0CB T = 25°CA T = 85°CAT = 125°CA T = 150°CA 100 150 200 250 300 350 400 450 500 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)C Fig. 7 Typical Equivalent On-Resistance vs. Collector Current R , EQUIVALENT ON-RESISTANCE (V)CE(SAT) T = 150°CA T = 125°CA T = 85°CA T = 25°CA T = -55°CA I/ I = 1 0CB 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)C Fig. 8 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0.2 0.4 0.6 0.8 1.2 V , BASE-EMI TTER TURN-ON VOLTAGE (V)BE(ON) 1.0 V = 5 VCE T = 150°CA T = 125°CA T = 85°CA T = 25°CA T = -55°CA 0.001 0.01 0.1 1 10 I , COLLECTOR CURRENT (A)C Fig. 9 Typical Base-Emitter Saturation Voltage vs. Collector Current 0.2 0.4 0.6 0.8 1.0 1.4V , BASE-EMI TTER SATURATION VOLTAGE (V)BE(SAT)

1.2 I = 1 0CB/I

T = 150°CA T = 125°CA T = 8 5 ° CA T = 2 5 ° CA T = -55°CA 120 150 0 5 10 15 20 25 30 35 40 V , REVERSE VOLTAGE (V)R Fig. 10 Typical Capacitance Characteristics CAPACITANCE (pF) Cibo Cobo f = 1MHz

Document number: DS31588 Rev. 3 - 2 5 of 6 www.diodes.com August 2010 © Diodes Incorporated DSS30101L ADVANCE INFORMATION Package Outline Dimensions Suggested Pad Layout SOT-23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 - - 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 α 0° 8° - All Dimensions in mm Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 C 2.0 E 1.35 A M J L D F B C H K G X E Y CZ

Document number: DS31588 Rev. 3 - 2 6 of 6 www.diodes.com August 2010 © Diodes Incorporated DSS30101L ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does Di odes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or us er of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. Should Customers purchase or use Diodes Inco rporated products for any unintended or una uthorized application, Customers shall i ndemnify and hold Diodes Incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporate d and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com