DSM80100M
Document overview
- Manufacturer or author: Diodes Incorporated
- PDF pages: 6
Technical content
Features
- Integrates one PNP Transistor (Q1) and two Switching Diodes (D1, D2) in a Single Compact Package
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data
- Case: SOT26
- Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Finish Annealed over Copper Leadframe (Lead-Free Plating). Solderable per MIL-STD-202, Method 208
- Terminal Connections: See Diagram
- Weight: 0.01 grams (Approximate) Ordering Information (Note 4) Part Number Case Packaging DSM80100M-7 SOT26 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Hal ogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. Marking Information Date Code Key Year 2014 2015 2016 2017 2018 2019 2020 Code B C D E F G H Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Top View Top View Pin Configuration Device Schematic 100M = Product Type Marking Code (See Electrical Characteristics Table) YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) 1 2 46 5 D1D2 1 2 3 6 5 4 D1D2 100M YM PART OBSOLETE - CONTACT US
Document number: DS37319 Rev. 3 - 4 2 of 6 www.diodes.com November 2014 © Diodes Incorporated DSM80100M OBSOLETE – PART DISCONTINUED Maximum Ratings – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -4.0 V Continuous Collector Current IC(MAX) -500 mA Peak Pulse Collector Current @ DC Increment for IC; IB = 300mA; test duration >10s for each step. ICM -1.0 A Base Current IB -200 mA Maximum Ratings – D1, D2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 75 V RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current (Note 5) IFM 300 mA Average Rectified Output Current (Note 5) IO 200 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0µs IFSM 20 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 600 mW Thermal Resistance, Junction to Ambient Air (Note 5) RθJA 208 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic (Note 6) Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -80 V IC = -100µA, IE = 0 Collector-Emitter Breakdown Voltage BVCEO -80 V IC = -1.0mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO -4 V IE = -100µA, IC = 0 Collector Cutoff Current ICBO -100 nA VCB = -60V, IE = 0 Collector-Emitter Saturation Voltage VCE(SAT) -0.25 V IC = -100mA, IB = -10mA DC Current Transfer Ratio hFE 120 280 500 IC = -10mA, VCE = -1.0V Electrical Characteristics – D1, D2 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V(BR)R 75 V IR = 100µA Forward Voltage VF 0.715 V IF = 5.0mA 0.855 IF = 10mA 1.0 IF = 50mA 1.25 IF = 150mA Leakage Current (Note 6) IR 0.1 µA VR = 75V 25 nA VR = 20V Total Capacitance CT 1.5 pF VR = 0V, f = 1.0MHz Reverse Recovery Time trr 4 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Notes: 5. Device mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect.
Document number: DS37319 Rev. 3 - 4 3 of 6 www.diodes.com November 2014 © Diodes Incorporated DSM80100M OBSOLETE – PART DISCONTINUED 100 -25 0 25 50 75 100 125 150 P , POWER DISSIPATION (mW)D T , AMBIENT TEMPERATURE (°C) Fig. 1 Power Derating Curve A -50 200 300 400 500 600 700 800 R = 208°C/W (Note 5) θJA 1 10 100 1,000 I , COLLECTOR CURRENT (mA) Fig. 2 Typical DC Current Gain vs. Collector Current C 100 1,000 h , DC CURRENT GAINFE , T = A -55 C° T = 8A 5C° T = A 150 C° T = A 25 C° V = VCE 5 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 2 4 6 8 10 V , COLLECTOR-EMITTER VOLTAGE (V) Fig. 3 Typical Collector Current vs. Collector-Emitter Voltage CE I , COLLECTOR CURRENT (A)C I = 1mAB I = 0.1mAB I = 2mAB I = 3mAB I = 4mAB I = 5mAB I = 8mAB 0.1 1 10 100 1,000 0.01 0.1 -V , COLLECTOR-EMITTER SATURATION CE(SAT) VOLTAGE (V) -I , COLLECTOR CURRENT (mA)C Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current I /I = 10CB T = 85°CA T = 25°CA T = -55°CA T = 150°CA 0.1 1 10 100 I , COLLECTOR CURRENT (mA) Fig. 5 Typical Base Emitter Voltage vs. Collector Current C 1,000 0.2 0.4 0.6 0.8 1.0 1.2 V , BASE EMITTER VOLTAGE (V)BE(ON) V = VCE 5 T = 150°CA T = 25°CA T = 5°CA -5 T = 5°CA 8 100 1,000 10,000 100,000 -50 -25 0 25 50 75 100 125 150 T , AMBIENT TEMPERATURE (°C) Fig. 6 Collector Cutoff Current vs. Ambient Temperature A I , COLLECTOR CUTOFF CURRENT (nA)CBO V = 100V I = 0 CB E
Document number: DS37319 Rev. 3 - 4 4 of 6 www.diodes.com November 2014 © Diodes Incorporated DSM80100M OBSOLETE – PART DISCONTINUED 0 8 16 24 32 40 V , REVERSE VOLTAGE (V) Fig. 7 Typical Capacitance Characteristics - D1, D2 R 0.5 0.7 0.9 1.1 1.5 CAPACITANCE (pF) f = 1MHz1.3 T = 25°CA 0.1 1 10 100 V , COLLECTOR EMITTER VOLTAGE (V)CE Fig. 8 Safe Operation Area for Q1 0.0001 0.001 0.01 0.1 I , COLLECTOR CURRENT (A)C T = 25°C Single Pulse A DC P = 100msW P = 10msW P = 1msW P = 100µsW Fig. 9 Typical Forward Characteristics - D1, D2 V , INSTANTANEOUS FORWARD VOLTAGE (V)F 1.6 0.1 100 1,000I , INSTANTANEOUS FORWARD CURRENT (mA)F T = -55°CA T = 25°CA T = 85°CA T = 150°CA 0.001 0.01 0.1 100 0 10 20 30 40 50 60 70 80 90 100 I , INSTANTANEOUS REVERSE CURRENT ( A)R µ V , INSTANTANEOUS REVERSE VOLTAGE (V) Fig. 10 Typical Reverse Characteristics - D1, D2 R Fig 11 Operating T emperature Derating - D1, D2 100 125 150 175 0 20 40 60 80 100 120 V , REVERSE VOLTAGE (V)R T , AMBIENT TEMPERATURE ( C)A °
Document number: DS37319 Rev. 3 - 4 5 of 6 www.diodes.com November 2014 © Diodes Incorporated DSM80100M OBSOLETE – PART DISCONTINUED Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 α 0° 8° All Dimensions in mm Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 A M J LD B C H K X Z Y C2C2 G
Document number: DS37319 Rev. 3 - 4 6 of 6 www.diodes.com November 2014 © Diodes Incorporated DSM80100M OBSOLETE – PART DISCONTINUED IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES (“DIODES”) MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON- INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. The Information contained herein is for informational purpose only and is provided only to i llustrate the operation of Diodes products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and tec hnically trained engineering customers and users who design with Diodes products. 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