DSEP60-06A THINKISEMI | Alldatasheet
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Technical content
60Ampere,600Volt SwitchMode Type Single Fast Recovery Epitaxial Diode Pb Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Base Backside
- Ultrafast Recovery Time
- Soft Recovery Characteristics
- Low Recovery Loss
- Low Forward Voltage
- High Surge Current Capability
- Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE DSEP60-06A using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. DSEP60-06A © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/3Rev.09T Absolute Maximum Ratings Parameter Symbol Test Conditions Values Units Repetitive peak reverse voltage VRRM 600 V Continuous forward current IF(AV) Tc =110°C 60 ASingle pulse forward current IFSM Tc =25°C 500 Maximum repetitive forward current IFRM Square wave, 20kHZ 120 Operating junction Tj 175 °C Storage temperatures Tstg -55 to +175 °C
Electrical performance (typic) Electrical characteristics (Ta=25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ. Max. Units Breakdown voltage Blocking voltage VBR, VR IR=100µA 600 VForward voltage (Per Diode) VF IF=60A 1.45 1.70 IF=60A, Tj =125°C 1.25 1.50 Reverse leakage current(Per Diode) IR VR= VRRM 50 µA Tj=150°C, VR=600V 500 Reverse recovery time(Per Diode) trr IF=0.5A, IR=1A, IRR=0.25A 40 55 ns IF=1A,VR=30V, di/dt =200A/us 30 40 Paramter Symbol Typ Units Junction-to-Case RθJC 0.8 ℃/W DSEP60-06A © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/3Rev.09T
Ejector pin hole thickness (h) D A be c L H Ø SYMBOL DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES MIN. MAX. MIN. MAX. A 4.850 5.150 0.191 0.200 A1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 D 15.450 15.750 0.608 0.620 E1 3.500 Ref. 0.138 Ref. E2 3.600 Ref. 0.142 Ref. L 40.900 41.300 1.610 1.626 L1 24.800 25.100 0.976 0.988 L2 20.300 20.600 0.799 0.811 Ø 7.100 7.300 0.280 0.287 e 10.900 Typ. 0.429 Typ. H 5.980 Typ. 0.235 Typ. h 0.000 0.300 0.000 0.012 TO-247-2L DIMENSIONS DSEP60-06A © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/3Rev.09T