DSEP2X60-12A ISC | Alldatasheet
Document overview
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Technical content
FastRecoveryDiode DSEP2X60-12A www.iscsemi.com
FEATURES
- Verylowleakage current
- Veryshort recoverytime
- Planar passivatedchips
APPLICATIONS
- SMPS
- UPS ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM max.repetitivereverseblocking voltage 1200 V VRSM max.non-repetitivereverseblocking voltage 1200 V IF(AV) averageforwardcurrent,TC=80℃,rectangular d=0.5,TVJ=150℃ 60 A IFSM max.forward surge current,t=10 ms;(50 Hz), sine,VR=0V,TVJ=45℃ 800 A IRMS RMS current 100 A Ptot total powerdissipation 200 W TJ Max.JunctionTemperature 150 ℃ Tstg StorageTemperature -40~150 ℃ VISOL isolationvoltage,1min,50/60Hz,RMS,IISOL≤1mA 2500 V THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 3.5 ℃/W
FastRecoveryDiode DSEP2X60-12A www.iscsemi.com ELECTRICALCHARACTERISTICS(TJ =25°C) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF DiodeForwardVoltage IR Reverse current VR=1200V -- -- 1.0 mA PACKAGEOUTLINE Dimensionsinmm PRODUCTDISCLAIMER ISCreserves the rightstomake changes ofthe contentherein the datasheetat anytimewithout notification.The information containedherein ispresented only asaguide forthe applicationsof our products. ISCproductsareintendedforusageingeneralelectronicequipment.Theproductsarenotdesignedfor usein equipment whichrequire specialized quality and/orreliability,orinequipmentwhichcouldhave applicationsin hazardous environments,aerospaceindustry,ormedicalfield.Pleasecontactus ifyou intend ourproducts to beusedin thesespecial applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsanyand allliability,including without limitationspecial,consequentialorincidentaldamages. Itis strictly prohibitedtoreprint orcopypartorallofthis datasheet withoutpermissionfrom ISC.