DSEP29-12A THINKISEMI | Alldatasheet

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Technical content

30A,1200V SwitchMode Single Fast Recovery Epitaxial Diode Pb © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/3 Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Base Backside

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE DSEP29-12A using lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. Rev.05 ABSOLUTE MAXIMUM RATINGS T C

ELECTRICAL CHARACTERISTICS

T =25°C unless otherwise specified C =25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit V Maximum D.C. Reverse Voltage R 1200 V V Maximum Repetitive Reverse Voltage RRM 1200 V I Average Forward Current F(AV) T C 30 =110°C A I RMS Forward Current F(RMS) T C 42 =110°C A I Non-Repetitive Surge Forward Current FSM T J 300 =45°C, t=10ms, 50Hz, Sine A P Power Dissipation D 105 W T Junction Temperature J -40 to +150 °C T Storage Temperature Range STG -40 to +150 °C Torque Module-to-Sink Recommended（M3） 1.1 N·m R Thermal Resistance θJC Junction-to-Case 1.2 °C /W Weight 2.2 g Symbol Parameter Test Conditions Min. Typ. Max. Unit I Reverse Leakage Current RM V R V R =1200V, T J -- =125°C -- 1 mA V Forward Voltage F I F -- =30A 2.15 2.5 V I F =30A, T J t Reverse Recovery Time rr I F =1A, V R =30V, di F -- /dt=-200A/μs 30 -- ns t Reverse Recovery Time rr V R =600V, I F =30A di F /dt=-200A/μs, T J =25°C 160 -- ns I Max. Reverse Recovery Current RRM -- 5 -- A t Reverse Recovery Time rr V R =600V, I F =30A di F /dt=-200A/μs, T J =125°C 300 -- ns I Max. Reverse Recovery Current RRM -- 11 -- A

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/3Rev.05 I F (A) V F （V） Fig1. Forward Voltage Drop vs Forward Current T J =125°C T J =25°C 0 0.5 1.0 2.0 2.5 3.0 di F /dt（A/μs） Fig2. Reverse Recovery Time vs di F /dt 1000 800 600 400 200 0 0 100 t rr (ns) 200 300 400 500 V R =600V T J =125°C I F =60A I RRM (A) di F /dt（A/μs） Fig3. Reverse Recovery Current vs di F /dt 0 200 400 600 800 1000 di F /dt（A/μs） Fig4. Reverse Recovery Charge vs di F /dt 1000 800 600 400 200 0 0 Q rr (μc) V R =600V T J =125°C I F =60A I F =15A V R =600V T J =125°C I F =60A I F =30A I F =15A K f 0.2 0.4 1.4 0.6 Z thJC (K/W) 0.8 I RRM Q rr t rr T J (°C) Fig5. Dynamic Parameters vs Junction Temperature 0 25 50 100 150 1 10 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance 75 125 1.5 1.2 Duty 0.5 0.2 0.1 0.05 Single Pulse I F =30A I F =15A I F =30A 1.0

© 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 3/3Rev.05 Dimensions TO-220AC Fig7. Diode Reverse Recovery Test Circuit and Waveform I F dI F /dt t rr I RRM Q rr 0.25 I RRM 0.9 I RRM