DSEP29-06AS THINKISEMI | Alldatasheet

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K(Bottom Side Metal Heatsink) K A Pb Free Plating Product DSEP29-06AS ThinkiSemi 30Ampere,600Volt Surface Mount Ultrafast Recovery Epitaxial Diode Pb

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE DSEP29-06AS using THINKISEMI lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. DSEP29-06AS © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/5Rev.11T ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V RRM 600 V Average rectified forward current in DC I F(AV) T C = 130 °C 30 ANon-repetitive peak surge current I FSM T J = 25 °C 200 Operating junction and storage temperatures T J , T Stg -65 to +175 °C ELECTRICAL SPECIFICATIONS (T J = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITION S MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V BR V R I R = 100 μA 600 - - V Forward voltage V F I F = 30 A - 1.4 2.0 I F = 30 A, T J = 150 °C - 1.15 1.35 Reverse leakage current I R V R = V R rated - 0.02 30 μAT J = 150 °C, V R = V R rated - 30 250 Junction capacitance C T V R = 600 V - 20 - pF Series inductance L S Measured lead to lead 5 mm from package body - 8 - nH TO-263/D2PAK(SMD-220)-SQ Internal Configuration LEFT PIN RIGHT PIN Note: Pins Left & Right must be electrically connected at the printed circuit board. BOTTOM SIDE METAL HEATSINK A

DYNAMIC RECOVERY CHARACTERISTICS (T J = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIO NS MIN. TYP. MAX. UNITS Reverse recovery time t rr I F = 1 A, dI F /dt = 50 A/μs, V R = 30 V - 30 45 nsT J = 25 °C I F = 30 A, dI F /dt = 200 A/μs, V R = 200 V -4 5- T J = 125 °C - 100 - Peak recovery current I RRM T J = 25 °C - 5.6 - AT J = 125 °C - 10 - Reverse recovery charge Q rr T J = 25 °C - 127 - nCT J = 125 °C - 580 - THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T J , T Stg -65 - 175 °C Thermal resistance, junction-to-case R thJC - 0.84 1.3 °C/WThermal resistance, junction-to-ambient R thJA Typical socket mount - - 70 Typical thermal resistance, case-to-heatsink R thCS Mounting surface, flat, smooth, and greased - 0.5 - Weight -2-g -0 . 0 7- o z . Mounting torque 6 (5) - 12 (10) kgf · cm (lbf · in) 100 1000 T J = 25 °C T J = 150 °C T J = 175 °C V F - Forward Voltage Drop (V) I F - Instantaneous Forward Current (A) 0.001 0.01 0.1 100 1000 150 °C 175 °C 25 °C 50 °C 75 °C 125 °C 100 °C V R - Reverse Voltage (V) I R - Reverse Current (μA) 0 100 200 300 400 500 600 Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/5Rev.11T Marking device DSEP29-06AS Case style TO-263/D2PAK(SMD-220)-SQ DSEP29-06AS

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 4 - Maximum Thermal Impedance Z thJC Characteristics Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics C T - Junction Capacitance (pF) V R - Reverse Voltage (V) 100 200 300 400 500 600 100 1000 Z thJC Thermal Impedance (°C/W) 0.01 0.1 Single Pulse (Thermal Resistance) D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 D = 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t Rectangular Pulse Duration (s) I F(AV) - Average Forward Current (A) Allowable Case Temperature (°C) 0 5 10 15 20 25 30 35 120 130 140 150 160 170 180 DC I F(AV) - Average Forward Current (A) 0 5 10 15 20 25 30 35 40 45 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC RM S Limit Average Power Loss (W) © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 3/5Rev.11T DSEP29-06AS

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 4/5Rev.11T Fig. 7 - Typical Reverse Recovery vs. dI F /dt Fig. 8 - Typical Stored Charge vs. dI F /dt Fig. 9 - Reverse Recovery Waveform and Definitions 100 1000 100 110 120 130 I F = 30 A, 125 °C I F = 30 A, 25 °C typical value diF/dt (A/ µ t rr n 100 1000 I F = 30 A, 125 °C typical value d i F d t A µ s Q r r n C 200 400 600 800 1000 1200 1400 1600 1800 I F = 30 A, 25 °C Q rr 0.5 I RRM di (rec)M /dt 0.75 I RRM I RRM t rr t b t a I F di F /dt (1) (2) (3) (4) (5) (1) di F /dt - rate of change of current through zero crossing (2) I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I RRM Q rr (5) di (rec)M /dt - peak rate of change of current during t b portion of t rr DSEP29-06AS

Mechancal Dimensions THINKI TO-263/D2PAK(SMD-220)-SQ © 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 5/5Rev.11T Min Max Min Max A - 10.5 - 0.413 B 14.60 15.88 0.575 0.625 C 2.41 2.67 0.095 0.105 D 0.68 0.94 0.027 0.037 E 2.29 2.79 0.090 0.110 F 4.44 4.70 0.175 0.185 G 1.14 1.40 0.045 0.055 H 1.14 1.40 0.045 0.055 I 8.25 9.25 0.325 0.364 J 0.36 0.53 0.014 0.021 K 2.03 2.79 0.080 0.110 0.327 0.043 0.138 0.665 0.374 0.098 DIM. Unit (mm) Unit (inch) 16.9 SUGGESTED PAD LAYOUT Symbol Unit (mm) A 10.8 B8 . 3 Unit (inch) 0.425 F9 . 5 G2 . 5 C1 . 1 D3 . 5 E DSEP29-06AS