DSEP12-12A THINKISEMI | Alldatasheet
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Technical content
W Nm ℃ /W g Unit μA mA ns ns ns A ns A Parameter/Test Conditions
ELECTRICAL CHARACTERISTICS
T C =25°C unless otherwise specified V R =1200V Symbol trr Reverse Recovery Time (I F = 0.5A, I R =1A, I RR = 0.25A) A Weight I FSM RMS Forward Current T J =45℃,t=10ms, 50Hz, Sine I F(AV) 1.0 Junction to Case Thermal Resistance Torque 1.1 -55 to +125 T C =100℃ T C =100℃ Non Repetitive Surge Forward Current Power Dissipation Module to Sink T STG I F(RMS) Average Forward Current P D Storage Temperature Range T J V RRM V R Maximum Repetitive Reverse Voltage R thJC V R =1200V, T J = 125℃ I F =15A,T J =125℃ trr I RRM V I F =15A 35 40 3.2 ABSOLUTE MAXIMUM RATINGS T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Maximum D.C. Reverse Voltage 1200 Values 150 V 125 -55 to +150 2.5 Junction Temperature Min. Typ. I RM Maximum Reverse Leakage Current 2.8 2.3 Maximum Reverse Recovery Current dI F /dt = -200A/μs V F Recommended（M3） Max. dI F /dt = -200A/μs ,T J =125℃ I F = 15A,V R =600V, Maximum Reverse Recovery Current 7.5 240 I RRM trr Reverse Recovery Time I F =15A,V R =600V, Forward Voltage Reverse Recovery Time trr Reverse Recovery Time (I F = 1A, dI F /dt = -200A/μs, V R = 30V) DSEP12-12A Pb Free Plating Product DSEP12-12A
15 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
- Ultrafast Recovery Time
- Soft Recovery Characteristics
- Low Recovery Loss
- Low Forward Voltage
- High Surge Current Capability
- Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE DSEP12-12A using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. TO-220AC/TO-220C-2P Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Base Backside © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/3Rev.05