DSEI60-12A THINKISEMI | Alldatasheet
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T C
ELECTRICAL CHARACTERISTICS
T =25°C unless otherwise specified C =25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit V Maximum D.C. Reverse Voltage R 1200 V V Maximum Repetitive Reverse Voltage RRM 1200 V I Average Forward Current F(AV) T C 60 =110°C A I RMS Forward Current F(RMS) T C 84 =110°C A I Non-Repetitive Surge Forward Current FSM T J 500 =45°C, t=10ms, 50Hz, Sine A P Power Dissipation D 312 W T Junction Temperature J -40 to +150 °C T Storage Temperature Range STG -40 to +150 °C Torque Module-to-Sink Recommended（M3） 1.1 N·m R Thermal Resistance θJC Junction-to-Case 0.4 °C /W Weight 6.0 g Symbol Parameter Test Conditions Min. Typ. Max. Unit I Reverse Leakage Current RM V R V R =1200V, T J -- =125°C -- 5 mA V Forward Voltage F I F -- =60A 2.10 -- V I F =60A, T J -- =125°C 1.75 V t Reverse Recovery Time rr I F =1A, V R =30V, di F -- /dt=-200A/μs 40 -- ns t Reverse Recovery Time rr V R =600V, I F =60A di F /dt=-200A/μs, T J =25°C 90 -- ns I Max. Reverse Recovery Current RRM -- 7.5 -- A t Reverse Recovery Time rr V R =600V, I F =60A di F /dt=-200A/μs, T J =125°C 320 -- ns I Max. Reverse Recovery Current RRM -- 14 -- A DSEI60-12A Pb Free Plating Product DSEI60-12A
60 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode
- Ultrafast Recovery Time
- Soft Recovery Characteristics
- Low Recovery Loss
- Low Forward Voltage
- High Surge Current Capability
- Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE DSEI60-12A using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. TO-247-2L Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Base Backside © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 1/3Rev.05
0.5 0.2 0.1 0.05 Single Pulse Z thJC (K/W) 1 10 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance I F (A) V F （V） Figure1. Forward Voltage Drop vs Forward Current T J =125°C T J =25°C 120 100 di F /dt（A/μs） Figure2. Reverse Recovery Time vs di F /dt 1000 800 600 400 200 0 0 100 t rr (ns) 200 300 400 500 V R =600V T J =125°C I F =120A I F =30A I F =60A I RRM (A) di F /dt（A/μs） Figure3. Reverse Recovery Current vs di F /dt 100 0 200 400 600 800 1000 di F /dt（A/μs） Figure4. Reverse Recovery Charge vs di F /dt 1000 800 600 400 200 0 0 Q rr (μc) V R =600V T J =125°C I F =120A I F =30A I F =60A V R =600V T J =125°C I F =120A I F =60A I F =30A 1.0 K f 0.2 0.8 1.2 1.4 I RRM Q rr t rr T J (°C) Figure5. Dynamic Parameters vs Junction Temperature 25 50 100 150 75 125 1.0 0.4 0.6 DSEI60-12A © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 2/3Rev.05
Fig7. Diode Reverse Recovery Test Circuit and Waveform I F dI F /dt t rr I RRM Q rr 0.25 I RRM 0.9 I RRM Dimensions in Millimeters Fig8. Package Outline DSEI60-12A © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Page 3/3Rev.05