DSEI60-10A ISC | Alldatasheet
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Technical content
FastRecoveryEpitaxialDiode DSEI60-10A www.iscsemi.com
FEATURES
- Planar passivatedchips
- Lowleakage current
APPLICATIONS
- SMPS
- UPS
- Antisaturation diode ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM PeakRepetitiveReverseVoltage 1000 V IF(AV) AverageRectifiedOutputCurrent, TC=80℃,rectangulard=0.5 60 A IFSM Non-RepetitivePeakForward Surge Current Sine,10ms,50Hz,VR=0V 500 A IRMS RMS Currentperterminal 70 A Ptot totalpowerdissipation 250 W TJ Max.JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -40~15 0 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.5 ℃/W
FastRecoveryEpitaxialDiode DSEI60-10A www.iscsemi.com ELECTRICALCHARACTERISTICS(TJ =25°Cunless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF ForwardVoltageDrop IR PeakReverseCurrent VR=1000V -- -- 3.0 mA PRODUCTDISCLAIMER ISCreserves the rightstomake changes ofthe contentherein the datasheetat anytimewithout notification.The information containedherein ispresented only asaguide forthe applicationsof our products. ISCproductsareintendedforusageingeneralelectronicequipment.Theproductsarenotdesignedfor usein equipment whichrequire specialized quality and/orreliability,orinequipmentwhichcouldhave applicationsin hazardous environments,aerospaceindustry,ormedicalfield.Pleasecontactus ifyou intend ourproducts to beusedin thesespecial applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsanyand allliability,including without limitationspecial,consequentialorincidentaldamages. Itis strictly prohibitedtoreprint orcopypartorallofthis datasheet withoutpermissionfrom ISC.