DSEI2X61-10B ISC | Alldatasheet
Document overview
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Technical content
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FEATURES
- LowForward Voltage
- Veryshortrecovery time
- VerylowIrm-values
- Verysoftrecovery behaviour
APPLICATIONS
- Snubberdiode
- Antisaturationdiode
- Rectifiersin switchmodepower supplies(SMPS)
- Uninterruptiblepowersupplies (UPS) ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM RepetitivePeakReverseVoltage 1000 V VR DCBlockingVoltage 1000 V IF(AV) AverageRectifiedForwardCurrent rectangulard=0.5 60 A IRMS RMScurrent perterminal 970 A I2t I2tValueforonecycleofsurgecurrent 150 kA2S PD Totalpowerdissipation 180 K/W TJ JunctionTemperature -40~150 ℃ Tstg StorageTemperatureRange -40~150 ℃ VISO IsolationVoltageA.C.1minute 2500 V THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.7 ℃/W
www.iscsemi.com 2 ELECTRICALCHARACTERISTICS(Ta=25℃) SYMBOL PARAMETER CONDITIONS MAX UNIT VF MaximumInstantaneousForwardVoltage IF=60A 2.27 V IF=120A 2.59 V IR MaximumInstantaneousReverseCurrent VR=1000V,TJ =25°C 3 mA VR=800V,TJ =125°C 14 mA IRM Reverserecoverycurrent IF=60A;diF/dt=300A/us VR =540V,TJ =25°C 15 A trr MaximumReverseRecoveryTime 100 ns IRM Reverserecoverycurrent IF=60A;diF/;dt=300A/us VR =540V,TJ =100°C 23 A trr MaximumReverseRecoveryTime 200 ns PackageDimensions(UNIT:MM):
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