DSEE30-04A THINKISEMI | Alldatasheet

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DSEE30-04A thru DSEE30-24A Pb Free Plating Product DSEE30-04A thru DSEE30-24A Pb

30.0 Ampere Heatsink Dual Tandem Structure In Series Ultra Fast Recovery Rectifiers

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2Rev.11T MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL UNIT IF(AV) A IFSM A VF IR μA μA Trr nS CJ pF RθJC ℃/W TJ,TSTG ℃ Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Note:(3)Thermal Resistance junction to case. Typical Junction Capacitance (Note 2) 150 Typical Thermal Resistance (Note 3) 0.75 Operating Junction and Storage Temperature Range -55 to +175 Maximum Reverse Recovery Time (Note1) PARAMETER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=125℃ (Total Device 2x30.0A=60.0A) 30.0 Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method)(Per Diode/Per Leg) 300 Maximum Instantaneous Forward Voltage @30.0A(Per Diode/Per Leg) Maximum DC Reverse Current @TJ=25℃ At Rated DC Blocking Voltage @TJ=125℃ 1.0 100 1.50-1.70 25-50 50-75 DSEE30-04A DSEE30-08A DSEE30-12A DSEE30-16A DSEE30-20A DSEE30-24A Features TO-3PN/TO-3PB Unit:inch(mm) ※ ThinkiSemi latest&matured p rocess FRD/FRED ※ Low forward volta g e dro p ※ Hi g h current ca p abilit y Low reverse leakage current Low reverse leakage current ※ Hi g h sur g e current ca p abilit y Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Am p lifiers and Sound Device S y stems ※ Platin g Power Su pp l y ,Motor Control,UPS and SMPS etc. Mechanical Data ※Case:Heat Sink TO-3PN/TO-3PB Outline Epoxy: UL 94V 0r a t ef l a m er e t a r d a n t Epoxy: UL 94V 0 rate flame retardant ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As marked on diode bod y ※ Mountin g p osition: An y ※ Wei g ht: 6.5 g ram a pp roximatel y Positive Negative Common Cathode Common Anode Doubler Tandem Polarity Series Tandem Polarity Prefix "DSEA" Prefix "DSED" Prefix "DSEE"Prefix "DSEC" VRRM 200x2 400x2 600x2 800x2 1000x2 1200x2 V VRMS 140x2 280x2 420x2 560x2 700x2 840x2 V VDC 200x2 400x2 600x2 800x2 1000x2 1200x2 V .600 (15.25 .580 (14.75 .776 (19.70 .819 (20.80 .130 (3.30 .145 (3.70 .798 (20.25 .777 (19.75 .087 (2.20 .070 (1.80 .126(3.20) .110(2.80) .225(5.70) .204(5.20) .225(5.70) .204(5.20) .199(5.05) .175(4.45) .030(0.75) .017(0.45) .604(15.35) .620(15.75) .050(1.25) .045(1.15) .142(3.60) .125(3.20) .095(2.40) Case Case Case Case

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.11T FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 150 0.1 0 125 CASE TEMPERATURE, INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 120 180 240 300 1 10 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 2250 1.0 4.0 10 100 150

60 Hz Resistive or

Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 T J =25 T J = 25 f = 1.0 MHZ Vsig = 50mVp-p DSEE30-04A DSEE30-08A DSEE30-12A DSEE30-16A/DSEE30-20A/DSEE30-24A 62.5 187.5 DSEE30-04A thru DSEE30-24A