DSEA29-02AC THINKISEMI | Alldatasheet

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DSEA29-02AC thru DSEA29-12AC Pb Free Plating Product DSEA29-02AC thru DSEA29-12AC Pb

30.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 1/2Rev.11T MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified. Single phase,half wave,60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL UNIT VRRM 200 400 600 800 1000 1200 V VRMS 140 280 420 560 700 840 V VDC 200 400 600 800 1000 1200 V IF(AV) A IFSM A VF IR μA μA Trr nS CJ pF RθJC ℃/W TJ,TSTG ℃ Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Note:(3)Thermal Resistance junction to case. Typical Junction Capacitance (Note 2) 150 Typical Thermal Resistance (Note 3) 3.0 Operating Junction and Storage Temperature Range -55 to +175 Maximum Reverse Recovery Time (Note1) PARAMETER Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=125℃ (Total Device 2x15.0A=30.0A) 30.0 Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method)(Per Diode/Per Leg) 300 Maximum Instantaneous Forward Voltage @15.0A(Per Diode/Per Leg) Maximum DC Reverse Current @TJ=25℃ At Rated DC Blocking Voltage @TJ=125℃ 1.0 100 1.50-1.70 25-50 50-75 DSEA29-02AC DSEA29-04AC DSEA29-06AC DSEA29-08AC DSEA29-10AC DSEA29-12AC Features ITO-220AB/TO-220F-3L Unit:inch(mm) ※ ThinkiSemi latest&matured p rocess FRD/FRED ※ Low forward volta g e dro p ※ Hi g h current ca p abilit y Low reverse leakage current Low reverse leakage current ※ Hi g h sur g e current ca p abilit y Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Am p lifiers and Sound Device S y stems ※ Platin g Power Su pp l y ,Motor Control,UPS and SMPS etc. Mechanical Data ※Case:Isolated fully plastic ITO-220AB/TO-220F-3L package Epoxy: UL 94V 0r a t ef l a m er e t a r d a n t Epoxy: UL 94V 0 rate flame retardant ※ Terminals: Solderable p er MIL-STD-202 method 208 ※ Polarit y : As marked on diode bod y ※ Mountin g p osition: An y ※ Wei g ht: 2.0 g ram a pp roximatel y .130(3.3) .114(2.9) .071(1.8) .055(1.4) .035(0.9) .011(0.3) (2.55) (2.55) .1 .1 .032(.8) .606(15.4) .543(13.8) .161(4.1)MAX .134(3.4) .165(4.2).381(9.7) .114(2.9) .098(2.5) .055(1.4) .039(1.0) MAX .583(14.8) .512(13.0) .118(3.0) Positive Negative Common Cathode Common Anode Doubler Tandem Polarity Series Tandem Polarity Prefix "DSEA" Prefix "DSED" Prefix "DSEE"Prefix "DSEC"

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/ Page 2/2Rev.11T FIG.1 - FORWARD CURRENT DERATING CURVE FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AVERAGE FORWARD RECTIFIED CURRENT, AMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 150 0.1 0 125 CASE TEMPERATURE, INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES NUMBER OF CYCLES AT 60Hz 120 180 240 300 1 10 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 0.1 1000 100 20 40 60 80 100 FIG.5 - TYPICAL JUNCTION CAPACITANCE REVERSE VOLTAGE, VOLTS 0.1 JUNCTION CAPACITANCE, pF 2250 1.0 4.0 10 100 150

60 Hz Resistive or

Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) T J =25 PULSE WIDTH=300uS 1% DUTY CYCLE T J =125 T J =25 T J = 25 f = 1.0 MHZ Vsig = 50mVp-p DSEA29-02AC DSEA29-04AC DSEA29-06AC DSEA29-08AC/DSEA29-10AC/DSEA29-12AC 62.5 187.5 DSEA29-02AC thru DSEA29-12AC