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T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 1 of 7 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 Available on commercial versions Schottky Barrier Diode Qualified per MIL-PRF-19500/444 Qualified Levels: JAN, JANTX, and JANTXV

DESCRIPTION

This Schottky barrier diode is metallurgically bonded and offers military grade qualifications for high-reliability applications on “1N” prefixed numbers. This small diode is hermetically sealed and bonded into a DO-35 glass package. DO-35 (DO-204AH) Package Also available in: UB package (3-pin surface mount) 1N5711UB, 1N5712UB (B, CC, CA) DO-213AA package (surface mount) 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, and 1N6858UR-1 Important: For the latest information, visit our website http://www.microsemi.com.

FEATURES

  • JEDEC registered 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1 numbers.
  • Metallurgically bonded.
  • JAN, JANTX, JANTXV and commercial qualifications also available per MIL-PRF-19500/444 on “1N” numbers only. (See Part Nomenclature for all available options).
  • RoHS compliant versions available (commercial grade only). APPLICATIONS / BENEFITS
  • Low reverse leakage characteristics.
  • Small size for high density mounting using flexible thru-hole leads (see package illustration).
  • ESD sensitive to Class 1. MAXIMUM RATINGS @ 25 ºC unless otherwise stated MSC – Lawrence

6 Lake Street,

Lawrence, MA 01841 Tel: 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com Parameters/Test Conditions Symbol Value Unit Junction and Storage Temperature TJ and TSTG -65 to +150 ºC Thermal Resistance, Junction-to-Lead @ lead length = 0.375 inch (9.52 mm) from body RӨJL 250 ºC/W Average Rectified Output Current: 1N5711 (1) DSB2810, DSB5712, 1N5712 & 1N6858 (2) 1N6857 (3) IO 150 mA Solder Temperature @ 10 s 260 oC NOTES: 1. At TL = +130°C and L = 0.375 inch, derate IO to 0 at +150°C. 2. At TL = +110°C and L = 0.375 inch, derate IO to 0 at +150°C. 3. At TL = +70°C and L = 0.375 inch, derate I O to 0 at +150°C.

T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 2 of 7 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 MECHANICAL and PACKAGING

  • CASE: Hermetically sealed glass package.
  • TERMINALS: Tin/lead plated or RoHS compliant matte-tin (on commercial grade only) over copper clad steel. Solderable per MIL-STD-750, method 2026.
  • POLARITY: Cathode indicated by band.
  • MARKING: Part number.
  • TAPE & REEL option: Standard per EIA-296. Consult factory for quantities.
  • WEIGHT: Approximately 0.2 grams.
  • See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5711 -1 (e3) Reliability Level JAN = JAN level JANTX = JANTX level JANTXV = JANTXV level CDS (reference JANS)* Blank = Commercial grade *Available only on 1N5711-1 JEDEC type number (see Electrical Characteristics table) RoHS Compliance e3 = RoHS compliant (on commercial grade only) Blank = non-RoHS compliant Metallurgically Bonded DSB 2810 (e3) Diode Schottky Barrier Series number (see Electrical Characteristics table) RoHS Compliance e3 = RoHS compliant Blank = non-RoHS compliant SYMBOLS & DEFINITIONS Symbol Definition C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. f frequency IR Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage VR. IO Average Rectified Output Current: The Output Current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and a 180 degree conduction angle. trr Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs. V(BR) Breakdown Voltage: A voltage in the breakdown region. VF Forward Voltage: A positive dc anode-cathode voltage the device will exhibit at a specified forward current. VR Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region. VRWM Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes known historically as PIV.

T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 3 of 7 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise noted TYPE NUMBER MINIMUM BREAKDOWN VOLTAGE MAXIMUM FORWARD VOLTAGE MAXIMUM FORWARD VOLTAGE WORKING PEAK REVERSE VOLTAGE MAXIMUM REVERSE LEAKAGE CURRENT MAXIMUM CAPACITANCE @ V R = 0 VOLTS f = 1.0 MHz V(BR) @ 10 µA VF @ 1 mA VF @ IF VRWM IR @ VR C Volts Volts V @ mA V (pk) nA Volts pF 1N5711-1 70 0.41 1.0 @ 15 50 200 50 2.0 1N5712-1 20 0.41 1.0 @ 35 16 150 16 2.0 1N6857-1 20 0.35 0.75 @ 35 16 150 16 4.5 1N6858-1 70 0.36 0.65 @ 15 50 200 50 4.5 DSB2810 20 0.41 1.0 @ 35 16 100 15 2.0 DSB5712 20 0.41 1.0 @ 35 16 150 16 2.0

T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 6 of 7 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 GRAPHS IF – Forward Current (mA) (PULSED) FIGURE 5 Typical Dynamic Resistance (RD) vs Forward Current (IF) RD – Dynamic Resistance (Ohms)

T4-LDS-0040, Rev. 4 (6/4/13) ©2013 Microsemi Corporation Page 7 of 7 1N5711-1, 1N5712-1, 1N6857-1, and 1N6858-1; DSB2810 and DSB5712 PACKAGE DIMENSIONS NOTES: 1. Dimensions are in inches. Millimeters are given for information only. 2. Dimensions BL and LD includes all components of the diode periphery expect the section of the leads over which the diameter is controlled. 3. Dimension BD shall be measured at the largest diameter. 4. In accordance with ASME Y1.4M, diameters are equivalents to φx symbology. Dimensions Symbol Inches Millimeters Notes Min Max Min Max BD 0.068 0.076 1.73 1.93 2,3 BL 0.125 0.170 3.18 4.32 2 LD 0.014 0.022 0.36 0.56 LL 1.000 1.500 25.40 38.10