DS9665CJ

DS2001 NSC | Alldatasheet

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DS2001/DS9665/DS2002/DS9666 Fy DS2003/DS9667/DS2004/DS9668 3 High Current/Voltage Darlington Drivers 8 General Description 3 The DS2001/DS9665/DS2002/DS9666/DS2003/DS9667 The DS2004/DS9668 has an appropriate input resistor to 1DS2004/DS9668 are comprised of seven high voltage, high allow direct operation from CMOS or PMOS outputs operat- current NPN Darlington transistor pairs. All units feature — ing from ‘supply voltages of 6.0V to 15V. 4 ‘common emitter, open collector outputs. To maximize their The _DS2001/DS9665/DS2002/DS9666/DS2003/DS9667 g effectiveness, these units contain suppression diodes for —$2004/DS9668 offer solutions to a great many interface | BS inductive loads and appropriate emitter base resistors for needs, including solenoids, relays, lamps, small motors, and 3 leakage. LEDs. Applications requiring sink currents beyond the capa- | & ‘The DS2001/DS9665 is a general purpose array which may _ bility of a single output may be accommodated by parallel- i=] be used with DTL, TTL, PMOS, CMOS, etc. Input current ing the outputs. Fa limiting is done by connecting an appropriate discrete resis- zg tor to each input. Features xz ‘The DS2002/DS9666 version does away with the need form Seven high gain Darlington pairs i=] any external discrete resistors, since each unit has a resis- ™ High output voltage (Voc = 50V) g tor and a Zener diode in series with the input. The DS2002/ High output current (Io — 350 mA) 3 DS9666 was specifically designed for direct interface from = DTL, TTL, PMOS, CMOS comy 4 , patible = MOS lg (opera at spy votages om 4V 10.257) Siprasion ds fr induct loads 3 The DS2003/DS9667 has a series base resistor 1o each Extended temperature range 3 Darlington pair, thus allowing operation directly with TTL or 3 CMOS operating at supply voltages of 5.0V. Connection Diagram Order Numbers JPackage | NPackage | MPackage Number | Number Number J16A NiGE Mi6A 16-Lead DIP ps2001 | Ds2001mJ | DSz001TN | DS2001TM 1 16 oseees | Ds2001TJ | Dsz001cN | Dsz001cM wa is A Ds2001C) | DS9665TN we OUT B DsgeesmJ | DS9665CN wot Hour DeeeesT wo— HS out o = WE 5 12 OUT E Ds2002 DS2002MJ DS2002TN DS2002TM 6 " Ds96es | Ds2002T/ | DS2002CN | DS2002CM wim ho OT Ds2002c | DS966sTN WG: our 6 Ds96eeMJ | DS9666CN ono —. common DS9666TJ Ds9666CJ tuevees7-1 | 82003 | DS2003MJ | DSz00sTN | DS2003TM Top View ps9667 | DS2003T) | DSz00acN | DS2003CM DS2003CJ DS9667TN DS9667MJ | DS9667CN DS9667TJ Ds9667CJ Ds2004 | Ds2004ms | Ds2004TN | 0S2004TM Dseess | DSz004T | DSZ004CN | DS2004CM Ds2004c) | Ds966sTN DseesamJ | DS9668CN Ds96esTs Ds966eCJ 5-17

3 Absolute Maximum Ratings (note 1)

Q|_ iW Muttary/Acrospace specified devices are required, 1DS2001C/DS9665C OC to +85°C | please contact the National Semiconductor Sales DS2002C/DS9666C OC to +85°C 3 Office/Distributors for availability and specifications. 0$2003C/DS9667C OC to +85°C & | _ Storage Temperature Range D$2004C/DS9668C OC to +85°C Q Ceramic DIP 65°C to +175°C Lead Temperature Q Molded DIP 65°C to + 150°C Ceramic DIP (Soldering, 60 seconds) 300°C 55 | Operating Temperature Range Molded DIP (Soldering, 10 seconds) 265°C DS2001M/DS9665M 55°C to + 125°C Maximum Power Dissipation* at 25°C DS2002M/DS9666M 55°C to + 125°C Cavity Package 2016 mw Q DS2003M/DS9667M 55°C to + 125°C Molded Package 1838 mW 3 DS2004M/DS9668M 55°C to + 125°C S.0. Package 926 mW 0S2001T/DS9665T 40°C to + 105°C *Derate cavity package 16.13 mW/*C above 25°C; derata molded DIP pack- i] Ds2003T/0S9667T 40°C to + 105°C Input Voltage 30v Ss Ds2004T/DS9668T —40°C to + 105°C Output Voltage 58V 3 Emitter-Base Voltage 6.0v g Continuous Collector Current 500 mA a Continuous Base Current 25 mA s Electrical Characteristics 1, = 25°C, uniess otherwise specified (Note 2) @ | Symbol [ Parameter [Conditions in| Typ | Max | Unite

9 I cex Output Leakage Ta = 85°C for Commercial

Py Current Voce = 50V (Figure 1a) bA FA Voce = 50V, Vi = 6.0V (Figure 1b) | DS200z/Dse666 | «|| _—~«|_500 | g Voce = 50V, Vi = 1.0V (Figure 1b) | DS2004/Dse6e8 | —s«|——=éi|_ 500 | =| Voesaty | Collector-Emitter Ic = 350 MA, Ip = 500 wA (Figure 2) (Note 3) [| 125 [16 |

3 Saturation Voklage [jc = 200 mA, Ig = 350 wA (Figure 2) a

3 Ip = 100A, Ig = 250 wA (Figure 2) | [os [11 |

WON) Input Current Vi = 17V (Figure 3) Dszooz/pseecs || 0.85 | 1.3 | [vim aasv gure | Dsz00arosees7 || 099] 45] a, Dsaooa/oseess |_| 0.95 | 0.5 | Vi= 12 (ure 3) [P30 [a5 | Torr) | Input Current Ta = 85°C for Commercial A (Note 4) Ig = 500 nA (Figure 4) La Vuon) | Input Voltage Voe = 2.0V, Ig = 300mA (Figures) | DS2z00z/Dseees | Ss || ~—s|— 13 | (Note 5) Voe = 2.0V, Ig = 200 mA (Figure 5) | DS2003/Dse667 | __—«| —S=s| 2.4 | Corer | Voe = 2.0V, Ig = 300 mA (Figure 5) es ee Vor = 2.0V, Ic = 125mA (Figure 5) | DS2004/Dse668 | «| —=—s«|— 5.0 | Vog = 2.0V, ig = 200 mA (Figure 5) | [| 60 | Vog = 20V, Ig = 275 mA (Figure 5) | [| 70 | Voe = 2.0V, Ig = 950 mA (Figure 5) | {| ao | fre DC Forward Current | Vce = 2.0V, Ic = 350 mA (Figure 2) | DS2001/D89665 Transfer Ratio Gy | inputCapacitance [88 ft Tor tH Turn-On Delay 05 Vit00.5 Vo [0 [ns tea 0.5 V\\t00.6 Vo [ff 40 Tas Rk Clamp Diode Va = 50V (Figure 6) Ta = 25°C 50 | mA Leakage Current Ta = 85°C 100 | pA Ve Clamp Diode Ie = 350 mA (Figure 7) 17 Vv Forward Voltage ‘Note ¥: "Absolute Maximum Ratings” are those values beyond which the safety ofthe device cannot be guaranteed. They are not meant to imply thatthe devices shouldbe operated at these limits. The tables of "Electcal Characterstcs” provide conditions for actual device operation. ‘Note 2: Al iits apply o the complate Darlington series except as specified for a single devico type. Note &: Under normal operating conditions these units wil sustain 350 mA per output with Vog (say = 1.6V at 70°C witha pulse width of 20 ms and a duty cyclo of 30%, Note 4: The lyosry current im gueranteed against pata turn-on ofthe output Note &: The Von) vollage lini quarantoes a minimum output snk current per the specited test conditions, 5-18

Typical Performance Characteristics g DS2002/DS9666 5 Collector Current vs Collector Current vs Input Current vs sq Saturation Voltage mo Input Current 2pinPut ‘Voltage 3 aeaea Z wa _ creme HSI | lp 7 a ty 4 3 i. aan Z| yep ig [tty [Tf YT pacenee 5 | of Az page if Hal ee oo g ae ovZ | | T | ot LT] o os Py 1S 0 20 400 600 24 6 8 DD MB Ss saver =¥ wo uo =o enwune-¥ 2 wrens | 8 0S2003/DS9667 DS2004/Ds9668 Peak Collector Current vs Ss Input Current vs. Input Current vs Duty Cycle and Number of Input Voltage Input Voltage 4 Outputs (Molded Package) od a ny A » 1 Ory 5 H Teams TEE] POS SE a aan ts Ht BANRNONG Le ey 4 \\ | =) SSS ee Peer) eS OE a / | ee FP oer | [I gies fn soo ie Lit Th ae oe oo eee =.» ee vrs verve =v um erat =x Peak Collector Current vs Duty Cycle and Number of Outputs (Ceramic Package) a = (MV 4 i wi WA\\ || NN ele NSN . ee ouvert x 5-19

3 Equivalent Circuits

3 1052001 /0s9665 COMMON 2008/0s9667 ‘COMMON our our gs 27k 8 i" nN gS S a g 3 = = ao Q 2002/0s9666 ‘coMMON s2004/0s9668 ‘cOMMOK 3 70 05a our ‘o5ka our Q " N : a Py ~ TUF (9674 = Hy TUF/9647-5 Q| Test Circuits

3 OPEN #50V OPEN #50 OPEN

omen teox tee 5 « a id ve TLIF/9647-7 ~ ~ TLIF/9647-8 — = a FIGURE 1a FIGURE 1b ~ ~ suerese7-9 FIGURE 2 OPEN OPEN #50V ‘OPEN 4 ‘ v A OPEN Ie + m™ ‘ = ce Tt aa t t ~ ~ ‘TU /9667-10 aurea er" = = = um - FIGURE 3 FIGURE 5 +50v k orex G ‘OPEN uF/o6e7-14 = FIGURE 7 TUF 0647-18 FIGURE 6 5-20

PMOS to Load Butter for Higher Current Loads g vy Vp % Ne Fd : te ‘ “ @ 8 5 a 3 A 3 3] ososss [ta 3] oseer [2 A | S Z = 7 A] PS] Pus £ 3 D 8 ourrur 8 = ob wr 2 - runes = I ™ 18 ouput = é = wean |S Ti to Lead ] 1 16 s 2 5 8 3 1% 4 0s2006/ 13 3] sess [iz {=F oT 7 70 r) ry 2N4901 2000 oun = > = TUF 9647-17 624