DS91M047TMA/NOPB

DS91M047_13 TI1 | Alldatasheet

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R T = ZLOADED Line Card in SLOT N M-LVDS Receivers R T R TZ0 R T R TZ0 R T R TZ0 DS91M047 www.ti.com SNLS145E –JUNE 2008–REVISED APRIL 2013 DS91M047125MHzQuadM-LVDSLineDriver Check forSamples: DS91M047 1FEATURES DESCRIPTION The DS91M047 isa high-speedquad M-LVDS line 2• DC -125 MHz /250 Mbps Low Jitter,Low driverdesignedfordrivingclockordatasignalstoupSkew, Low Power Operation tofourmultipointnetworks.• Conforms toTIA/EIA-899M-LVDS Standard M-LVDS (MultipointLVDS) is a new familyof bus• ControlledTransitionTimes (2ns typ) interfacedevices based on LVDS technologyMinimizeReflections specificallydesigned for multipointand multidrop

• 8 kV ESD on M-LVDS Pins ProtectsAdjoining cable and backplane applications.It differsfrom Components standardLVDS inprovidingincreaseddrivecurrentto handledoubleterminationsthatarerequiredinmulti-• Flow-Through PinoutSimplifiesPCB Layout point applications.Controlled transitiontimes• IndustrialOperatingTemperature Range minimizereflectionsthatare common in multipoint(−40°C to+85°C) configurationsdue tounterminatedstubs.
• Availableina Space Saving SOIC-16 Package The DS91M047 acceptsLVTTL/LVCMOS inputlevels and translatesthem to M-LVDS signallevelswithAPPLICATIONS transitiontimes of greaterthan 1 ns. The device providesthe DE and DE inputsthatare ANDed• Multidrop/MultipointClock and Data togetherand controltheTRI-STATE outputs.The DEDistribution and DE inputsarecommon toallfourdrivers.• High-Speed,Low Power, Short-Reach AlternativetoTIA/EIA-485/422 The DS91M047 has a flow-throughpinoutforeasy PCB layout.The DS91M047 provides a new• Clock DistributioninAdvancedTCA (ATCA) alternativefor high speed multipointinterfaceand MicroTCA (μTCA, uTCA) Backplanes applications.Itispackaged ina space savingSOIC- 16 package. TYPICAL APPLICATION Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2008–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SNLS145E –JUNE 2008–REVISED APRIL 2013 www.ti.com Connection Diagrams PIN DESCRIPTIONS Pin No. Name Description 2,3,6,7 DI Driverinputpin,LVCMOS compatible. 10,11,14,15 A Non-invertingdriveroutputpin,M-LVDS levels. 9,12,13,16 B Invertingdriveroutputpin,M-LVDS levels. 1 DE Driverenablepin:When DE islow,thedriverisdisabled.When DE ishighand DE isloworopen,the driverisenabled.IfbothDE and DE areopen circuit,thenthedriverisdisabled. 8 DE Driverenablepin:When DE ishigh,thedriverisdisabled.When DE isloworopen and DE ishigh,the driverisenabled.IfbothDE and DE areopen circuit,thenthedriverisdisabled. 4 VDD Power supplypin,+3.3V ± 0.3V

5 GND Ground pin

AllothercombinationsofENABLE inputs X Z Z

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www.ti.com SNLS145E –JUNE 2008–REVISED APRIL 2013 These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. ABSOLUTE MAXIMUM RATINGS (1)(2) Power SupplyVoltage −0.3Vto+4V LVCMOS InputVoltage −0.3Vto(VDD + 0.3V) M-LVDS OutputVoltage −1.9Vto+5.5V M-LVDS OutputShortCircuitCurrentDuration Continuous JunctionTemperature +140°C StorageTemperatureRange −65°C to+150°C Lead TemperatureRange Soldering(4sec.) +260°C Maximum Package Power Dissipation@ +25°C D Package 2.21W DerateD Package 19.2mW/ °C above +25°C Package ThermalResistance(4-Layer,2 oz.Cu, θJA +52°C/W JEDEC) θJC +19°C/W ESD Susceptibility HBM ≥8 kV MM ≥250V CDM ≥1250V (1) AbsoluteMaximum Ratingsindicatelimitsbeyond whichdamage tothedevicemay occur,includinginoperabilityand degradationof devicereliabilityand/orperformance.Functionaloperationofthedeviceand/ornon-degradationattheAbsoluteMaximum Ratingsor otherconditionsbeyond thoseindicatedintheisnotimplied.The Recommended OperatingConditionsindicateconditionsatwhichthe deviceisfunctionaland thedeviceshouldnotbe operatedbeyond such conditions. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. RECOMMENDED OPERATING CONDITIONS Min Typ Max Units SupplyVoltage(VDD) +3.0 +3.3 +3.6 V VoltageatAny Bus Terminal(SeparateorCommon-Mode) −1.4 +3.8 V HighLevelInputVoltage(VIH) 2.0 VDD V Low LevelInputVoltage(VIL) 0 0.8 V OperatingFreeAirTemperature(TA) −40 +25 +85 °C Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:DS91M047

SNLS145E –JUNE 2008–REVISED APRIL 2013 www.ti.com DC ELECTRICAL CHARACTERISTICS (1)(2)(3)(4) Over supplyvoltageand operatingtemperatureranges,unlessotherwisespecified. Symbol Parameter Conditions Min Typ Max Units LVCMOS DC Specifications VIH High-LevelInputVoltage 2.0 VDD V VIL Low-LevelInputVoltage GND 0.8 V IIH High-LevelInputCurrent VIH = 3.6V -15 ±1 15 μA IIL Low-LevelInputCurrent VIL= 0V -15 ±1 15 μA VCL InputClamp Voltage IIN = -18mA -1.5 V M-LVDS DC Specifications |VAB | DifferentialOutputVoltageMagnitude 480 650 mV R L = 50Ω,C L = 5 pF ΔVAB Change inDifferentialOutputVoltageMagnitude See Figure1 and Figure3 −50 50 mVBetween LogicStates VOS(SS) Steady-StateCommon-Mode OutputVoltage 0.30 1.6 2.10 V R L = 50Ω |ΔVOS(SS)| Change inSteady-StateCommon-Mode OutputVoltage See Figure1 and Figure2 0 50 mVBetween LogicStates VA(OC) Maximum Steady-StateOpen-CircuitOutputVoltage 0 2.4 V See Figure4 VB(OC) Maximum Steady-StateOpen-CircuitOutputVoltage 0 2.4 V VP(H) VoltageOvershoot,Low-to-HighLevelOutput(5) R L = 50Ω,C L = 5 pF 1.2VSS V C D = 0.5pF,see Figure6VP(L) VoltageOvershoot,High-to-LowLevelOutput(5) −0.2VSS Vand Figure7 IOS OutputShort-CircuitCurrent(6) See Figure5 -43 43 mA VA = 3.8V,VB = 1.2V 0 32 μA IA DriverHigh-ImpedanceOutputCurrent VA = 0V or2.4V,VB = 1.2V −20 20 μA VA = −1.4V,VB = 1.2V −32 0 μA VA = 3.8V,VB = 1.2V 0 32 μA IB DriverHigh-ImpedanceOutputCurrent VA = 0V or2.4V,VB = 1.2V −20 20 μA VA = −1.4V,VB = 1.2V −32 0 μA IAB DriverHigh-ImpedanceOutputDifferentialCurent VA = VB,−1.4V≤ V ≤ 3.8V −4 4 μA(IA − IB) IA(OFF) DriverHigh-ImpedanceOutputPower-OffCurrent VA = 3.8V,VB = 1.2V DE = 0V 0 32 μA 0V ≤ VDD ≤ 1.5V VA = 0V or2.4V,VB = 1.2V DE = 0V −20 20 μA 0V ≤ VDD ≤ 1.5V VA = −1.4V,VB = 1.2V DE = 0V −32 0 μA 0V ≤ VDD ≤ 1.5V IB(OFF) DriverHigh-ImpedanceOutputPower-OffCurrent VA = 3.8V,VB = 1.2V DE = 0V 0 32 μA 0V ≤ VDD ≤ 1.5V VA = 0V or2.4V,VB = 1.2V DE = 0V −20 20 μA 0V ≤ VDD ≤ 1.5V VA = −1.4V,VB = 1.2V DE = 0V −32 0 μA 0V ≤ VDD ≤ 1.5V (1) The ElectricalCharacteristicstableslistensuredspecificationsunderthelistedRecommended OperatingConditionsexceptas otherwisemodifiedorspecifiedby theElectricalCharacteristicsConditionsand/orNotes.Typicalspecificationsareestimationsonlyand arenotensured. (2) Currentintodevicepinsisdefinedas positive.Currentoutofdevicepinsisdefinedas negative.Allvoltagesarereferencedtoground exceptVOD and ΔVOD . (3) Typicalvaluesrepresentmost likelyparametricnorms forVDD = +3.3V and TA = +25°C, and attheRecommended OperatingConditions atthetimeofproductcharacterizationand arenotensured. (4) C L includesfixturecapacitanceand C D includesprobecapacitance. (5) Specificationisspecifiedby characterizationand isnottestedinproduction. (6) Outputshortcircuitcurrent(IOS )isspecifiedas magnitudeonly,minus signindicatesdirectiononly.

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www.ti.com SNLS145E –JUNE 2008–REVISED APRIL 2013 DC ELECTRICAL CHARACTERISTICS (1)(2)(3)(4)(continued) Over supplyvoltageand operatingtemperatureranges,unlessotherwisespecified. Symbol Parameter Conditions Min Typ Max Units IAB(OFF) DriverHigh-ImpedanceOutputPower-OffCurrent VA = VB,−1.4V≤ V ≤ 3.8V (IA(OFF) − IB(OFF)) DE = 0V −4 4 μA 0V ≤ VDD ≤ 1.5V C A DriverOutputCapacitance 7.8 pF C B DriverOutputCapacitance 7.8 pF VDD = 0V C AB DriverOutputDifferentialCapacitance 3 pF C A/B DriverOutputCapacitanceBalance(CA/CB) 1 ICC Power SupplyCurrent R L = 50Ω (AllOutputs) DI = VDD orGND (AllInputs) 65 75 mADE = VDD ,DE = GND f= 125 MHz ICCZ TRI-STATE Power SupplyCurrent R L = 50Ω (AllOutputs) DI = VDD orGND (AllInputs) 19 24 mA DE = GND, DE = VDD SWITCHING CHARACTERISTICS (1)(2)(3) Over supplyvoltageand operatingtemperatureranges,unlessotherwisespecified. Symbol Parameter Conditions Min Typ Max Units tPHL DifferentialPropagationDelayHightoLow 1.5 3.1 5.0 ns tPLH DifferentialPropagationDelayLow toHigh 1.5 3.1 5.0 ns tSKD1 DifferentialPulseSkew |tPHL − tPLH |(4)(5) 0 70 140 ps R L = 50ΩtSKD2 Channel-to-ChannelSkew (4)(6) 0 70 200 ps C L = 5 pF, tSKD3 DifferentialPart-to-PartSkew (4)(7) C D = 0.5pF 0 0.8 1.5 ns(ConstantTA and VDD ) See Figure6 and Figure7 tSKD4 DifferentialPart-to-PartSkew (8) 0 3.5 ns tTLH RiseTime(4) 1.1 2.0 3.0 ns tTHL FallTime(4) 1.1 2.0 3.0 ns tPHZ DisableTime HightoZ 7 12.5 nsR L = 50Ω tPLZ DisableTime Low toZ 7 12.5 nsC L = 5 pF, C D = 0.5pFtPZH EnableTime Z toHigh 7 12.5 ns See Figure8 and Figure9tPZL EnableTime Z toLow 7 12.5 ns fMAX Maximum OperatingFrequency See (4) 125 MHz (1) The ElectricalCharacteristicslistensuredspecificationsunderthelistedRecommended OperatingConditionsexceptas otherwise modifiedorspecifiedby theElectricalCharacteristicsConditionsand/orNotes.Typicalspecificationsareestimationsonlyand arenot ensured. (2) Typicalvaluesrepresentmost likelyparametricnorms forVDD = +3.3V and TA = +25°C, and attheRecommended OperatingConditions atthetimeofproductcharacterizationand arenotensured. (3) C L includesfixturecapacitanceand C D includesprobecapacitance. (4) Specificationisspecifiedby characterizationand isnottestedinproduction. (5) tSKD1 ,|tPLHD − tPHLD |,PulseSkew, isthemagnitudedifferenceindifferentialpropagationdelaytimebetween thepositivegoingedge and thenegativegoingedge ofthesame channel. (6) tSKD2 ,Channel-to-ChannelSkew, isthedifferenceinpropagationdelay(tPLHD ortPHLD )among alloutputchannels. (7) tSKD3 ,Part-to-PartSkew, isdefinedas thedifferencebetween theminimum and maximum differentialpropagationdelays.This specificationappliestodevicesatthesame VDD and within5°C ofeach otherwithintheoperatingtemperaturerange. (8) tSKD4 ,Part-to-PartSkew, isthedifferentialchannel-to-channelskew ofany eventbetween devices.Thisspecificationappliestodevices overrecommended operatingtemperatureand voltageranges,and acrossprocessdistribution.tSKD4 isdefinedas |Max − Min| differentialpropagationdelay. Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:DS91M047

A B ~ 1.9V ~ 1.3V 'VOS(SS) VOS(PP)VOS DS91M047 SNLS145E –JUNE 2008–REVISED APRIL 2013 www.ti.com PARAMETER MEASUREMENT INFORMATION Figure1. DifferentialDriverTestCircuit Figure2. DifferentialDriverWaveforms Figure3. DifferentialDriverFullLoad TestCircuit

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www.ti.com SNLS145E –JUNE 2008–REVISED APRIL 2013 PARAMETER MEASUREMENT INFORMATION (continued) Figure4. DifferentialDriverDC Open TestCircuit Figure5. DifferentialDriverShort-CircuitTestCircuit Figure6. DriverPropagationDelay and TransitionTime TestCircuit Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:DS91M047

SNLS145E –JUNE 2008–REVISED APRIL 2013 www.ti.com PARAMETER MEASUREMENT INFORMATION (continued) Figure7. DriverPropagationDelay and TransitionTime Waveforms Figure8. DriverTRI-STATE Delay TestCircuit

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www.ti.com SNLS145E –JUNE 2008–REVISED APRIL 2013 PARAMETER MEASUREMENT INFORMATION (continued) Figure9. DriverTRI-STATE Delay Waveforms Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:DS91M047

4.5 4.0 3.5 3.0 2.5 2.0 1.5 -50 -10 30 70 110 150 f = 125 MHz DRIVER PROPAGATION DELAY (tPHLD) (ns) TEMPERATURE (° C) VCC = 3.0V VCC = 3.3V VCC = 3.6V 180 150 120 0 25 50 75 100 125 VCC = 3.3V TA = 25° C R L = 50: On all CH) DE = H DE* = L POWER SUPPLY CURRENT (mA) FREQUENCY (MHz) 900 750 600 450 300 150 0 25 50 75 100 125 f = 1 MHz VCC = 3.3V TA = 25° C VOD - DRIVER OUTPUT AMPLITUDE (mV) RESISTIVE LOAD (:) 4.5 4.0 3.5 3.0 2.5 2.0 1.5 -50 -10 30 70 110 150 f = 125 MHz DRIVER PROPAGATION DELAY (tPLHD) (ns) TEMPERATURE (° C) VCC = 3.0V VCC = 3.3V VCC = 3.6V 2.8 2.5 2.2 1.9 1.6 1.3 1.0 -50 -10 30 70 110 150 f = 125 MHz DRIVER RISE TIME (10-90%) (ns) TEMPERATURE (° C) VCC = 3.0V VCC = 3.3V VCC = 3.6V 2.8 2.5 2.2 1.9 1.6 1.3 1.0 -50 -10 30 70 110 150 f = 125 MHz DRIVER FALL TIME (10-90%) (ns) TEMPERATURE (° C) VCC = 3.0V VCC = 3.3V VCC = 3.6V DS91M047 SNLS145E –JUNE 2008–REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS Figure10.DriverRise Time as a FunctionofTemperature Figure11.DriverFallTime as a FunctionofTemperature Figure12.DriverOutput SignalAmplitude as a Functionof Figure13.DriverPropagationDelay (tPLHD)as a Function ResistiveLoad ofTemperature Figure14.DriverPropagationDelay (tPHLD)as a Function Figure15.DriverPower Supply Currentas a Functionof ofTemperature Frequency

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www.ti.com SNLS145E –JUNE 2008–REVISED APRIL 2013

REVISION HISTORY

Changes from RevisionD (April2013)toRevisionE Page Copyright© 2008–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:DS91M047

www.ti.com 16-Apr-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Top-Side Markings (4) Samples DS91M047TMA/NOPB ACTIVE SOIC D 16 48 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 DS91M047 TMA DS91M047TMAX/NOPB ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 DS91M047 TMA (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 24-Apr-2013 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) DS91M047TMAX/NOPB SOIC D 16 2500 367.0 367.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 24-Apr-2013 Pack Materials-Page 2

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