DS91M047 NSC | Alldatasheet

Document overview

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Technical content

Features

■ DC - 125 MHz / 250 Mbps low jitter, low skew, low power operation ■ Conforms to TIA/EIA-899 M-LVDS Standard ■ Controlled transition times (2 ns typ) minimize reflections ■ 8 kV ESD on M-LVDS pins protects adjoining components ■ Flow-through pinout simplifies PCB layout ■ Industrial operating temperature range (−40°C to +85°C) ■ Available in a space saving SOIC-16 package

Applications

■ Multidrop / Multipoint clock and data distribution ■ High-Speed, Low Power, Short-Reach alternative to TIA/EIA-485/422 ■ Clock distribution in AdvancedTCA (ATCA) and MicroTCA (μTCA, uTCA) backplanes Typical Application 20024002 © 2009 National Semiconductor Corporation 200240 www.national.com DS91M047 125 MHz Quad M-LVDS Line Driver

Ordering Information

Operating Temperature Package Type / Number Order Number −40°C to +85°C SOIC/M16A DS91M047TMA Connection Diagrams 20024001 20024003 Pin Descriptions Pin No. Name Description 2, 3, 6, 7 DI Driver input pin, LVCMOS compatible. 10, 11, 14, 15 A Non-inverting driver output pin, M-LVDS levels. 9, 12, 13, 16 B Inverting driver output pin, M-LVDS levels. 1 DE Driver enable pin: When DE is low, the driver is disabled. When DE is high and DE is low or open, the driver is enabled. If both DE and DE are open circuit, then the driver is disabled. 8 DE Driver enable pin: When DE is high, the driver is disabled. When DE is low or open and DE is high, the driver is enabled. If both DE and DE are open circuit, then the driver is disabled. 4 VDD Power supply pin, +3.3V ± 0.3V

5 GND Ground pin

All other combinations of ENABLE inputs X Z Z www.national.com 2 DS91M047

Absolute Maximum Ratings (Note 4) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Power Supply Voltage −0.3V to +4V LVCMOS Input Voltage −0.3V to (VDD + 0.3V) M-LVDS Output Voltage −1.9V to +5.5V M-LVDS Output Short Circuit Current Duration Continuous Junction Temperature +140°C Storage Temperature Range −65°C to +150°C Lead Temperature Range Soldering (4 sec.) +260°C Maximum Package Power Dissipation @ +25°C Derate MA Package 19.2 mW/°C above +25°C Package Thermal Resistance (4-Layer, 2 oz. Cu, JEDEC) θJA +52°C/W θJC +19°C/W ESD Susceptibility HBM ≥8 kV MM ≥250V CDM ≥1250V Note 1: Human Body Model, applicable std. JESD22-A114C Note 2: Machine Model, applicable std. JESD22-A115-A Note 3: Field Induced Charge Device Model, applicable std. JESD22-C101-C Recommended OperatingConditions Min Typ Max Units Supply Voltage (VDD) +3.0 +3.3 +3.6 V Voltage at Any Bus Terminal −1.4 +3.8 V (Separate or Common-Mode) High Level Input Voltage (VIH) 2.0 VDD V Low Level Input Voltage (VIL) 0 0.8 V Operating Free Air Temperature (T A) −40 +25 +85 °C Over supply voltage and operating temperature ranges, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Units LVCMOS DC Specifications VIH High-Level Input Voltage 2.0 VDD V VIL Low-Level Input Voltage GND 0.8 V IIH High-Level Input Current VIH = 3.6V -15 ±1 15 μA IIL Low-Level Input Current VIL = 0V -15 ±1 15 μA VCL Input Clamp Voltage IIN = -18 mA -1.5 V M-LVDS DC Specifications |VAB| Differential Output Voltage Magnitude RL = 50Ω, CL = 5 pF Figures 1, 3 480 650 mV ΔVAB Change in Differential Output Voltage Magnitude Between Logic States −50 50 mV VOS(SS) Steady-State Common-Mode Output Voltage Figures 1, 2 RL = 50Ω 0.30 1.6 2.10 V |ΔVOS(SS)| Change in Steady-State Common-Mode Output Voltage Between Logic States 0 50 mV VA(OC) Maximum Steady-State Open-Circuit Output Voltage Figure 4 0 2.4 V VB(OC) Maximum Steady-State Open-Circuit Output Voltage 0 2.4 V VP(H) Voltage Overshoot, Low-to-High Level Output (Note 10) RL = 50Ω, CL = 5 pF CD = 0.5 pF, Figures 6, 7 1.2VSS V VP(L) Voltage Overshoot, High-to-Low Level Output (Note 10) −0.2VSS V IOS Output Short-Circuit Current (Note 8) Figure 5 -43 43 mA IA Driver High-Impedance Output Current VA = 3.8V, VB = 1.2V 0 32 μA VA = 0V or 2.4V, VB = 1.2V −20 20 μA VA = −1.4V, VB = 1.2V −32 0 μA IB Driver High-Impedance Output Current VA = 3.8V, VB = 1.2V 0 32 μA VA = 0V or 2.4V, VB = 1.2V −20 20 μA VA = −1.4V, VB = 1.2V −32 0 μA IAB Driver High-Impedance Output Differential Curent (IA − IB) VA = VB, −1.4V ≤ V ≤ 3.8V −4 4 μA 3 www.national.com DS91M047

Symbol Parameter Conditions Min Typ Max Units IA(OFF) Driver High-Impedance Output Power-Off Current VA = 3.8V, VB = 1.2V DE = 0V 0V ≤ VDD ≤ 1.5V 0 32 μA VA = 0V or 2.4V, VB = 1.2V DE = 0V 0V ≤ VDD ≤ 1.5V −20 20 μA VA = −1.4V, VB = 1.2V DE = 0V 0V ≤ VDD ≤ 1.5V −32 0 μA IB(OFF) Driver High-Impedance Output Power-Off Current VA = 3.8V, VB = 1.2V DE = 0V 0V ≤ VDD ≤ 1.5V 0 32 μA VA = 0V or 2.4V, VB = 1.2V DE = 0V 0V ≤ VDD ≤ 1.5V −20 20 μA VA = −1.4V, VB = 1.2V DE = 0V 0V ≤ VDD ≤ 1.5V −32 0 μA IAB(OFF) Driver High-Impedance Output Power-Off Current (IA(OFF) − IB(OFF)) VA = VB, −1.4V ≤ V ≤ 3.8V DE = 0V 0V ≤ VDD ≤ 1.5V −4 4 μA CA Driver Output Capacitance VDD = 0V 7.8 pF CB Driver Output Capacitance 7.8 pF CAB Driver Output Differential Capacitance 3 pF CA/B Driver Output Capacitance Balance (CA/CB) 1 ICC Power Supply Current RL = 50Ω (All Outputs) DI = VDD or GND (All Inputs) DE = VDD, DE = GND f = 125 MHz 65 75 mA ICCZ TRI-STATE Power Supply Current RL = 50Ω (All Outputs) DI = VDD or GND (All Inputs) DE = GND, DE = VDD 19 24 mA Note 4: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur, including inoperability and degradation of device reliability and/or performance. Functional operation of the device and/or non-degradation at the Absolute Maximum Ratings or other conditions beyond those indicated in the Recommended Operating Conditions is not implied. The Recommended Operating Conditions indicate conditions at which the device is functional and the device should not be operated beyond such conditions. Note 5: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed. Note 6: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except VOD and ΔVOD. Note 7: Typical values represent most likely parametric norms for VDD = +3.3V and TA = +25°C, and at the Recommended Operation Conditions at the time of product characterization and are not guaranteed. Note 8: Output short circuit current (IOS) is specified as magnitude only, minus sign indicates direction only. Note 9: CL includes fixture capacitance and CD includes probe capacitance. Note 10: Specification is guaranteed by characterization and is not tested in production. www.national.com 4 DS91M047

Switching Characteristics (Note 11, Note 12, Note 18) Over supply voltage and operating temperature ranges, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Units tPHL Differential Propagation Delay High to Low RL = 50Ω CL = 5 pF, CD = 0.5 pF Figures 6, 7 1.5 3.1 5.0 ns tPLH Differential Propagation Delay Low to High 1.5 3.1 5.0 ns tSKD1 Differential Pulse Skew |tPHL − tPLH| (Note 13, Note 14) 0 70 140 ps tSKD2 Channel-to-Channel Skew (Note 13, Note 15) 0 70 200 ps tSKD3 Differential Part-to-Part Skew (Note 13, Note 16) (Constant TA and VDD) 0 0.8 1.5 ns tSKD4 Differential Part-to-Part Skew (Note 17) 0 3.5 ns tTLH Rise Time (Note 13) 1.1 2.0 3.0 ns tTHL Fall Time (Note 13) 1.1 2.0 3.0 ns tPHZ Disable Time High to Z RL = 50Ω CL = 5 pF, CD = 0.5 pF Figures 8, 9 7 12.5 ns tPLZ Disable Time Low to Z 7 12.5 ns tPZH Enable Time Z to High 7 12.5 ns tPZL Enable Time Z to Low 7 12.5 ns fMAX Maximum Operating Frequency (Note 13) 125 MHz Note 11: The Electrical Characteristics tables list guaranteed specifications under the listed Recommended Operating Conditions except as otherwise modified or specified by the Electrical Characteristics Conditions and/or Notes. Typical specifications are estimations only and are not guaranteed. Note 12: Typical values represent most likely parametric norms for VDD = +3.3V and TA = +25°C, and at the Recommended Operation Conditions at the time of product characterization and are not guaranteed. Note 13: Specification is guaranteed by characterization and is not tested in production. Note 14: tSKD1, |tPLHD − tPHLD|, Pulse Skew, is the magnitude difference in differential propagation delay time between the positive going edge and the negative going edge of the same channel. Note 15: tSKD2, Channel-to-Channel Skew, is the difference in propagation delay (tPLHD or tPHLD) among all output channels. Note 16: tSKD3, Part-to-Part Skew, is defined as the difference between the minimum and maximum differential propagation delays. This specification applies to devices at the same VDD and within 5°C of each other within the operating temperature range. Note 17: tSKD4, Part-to-Part Skew, is the differential channel-to-channel skew of any event between devices. This specification applies to devices over recommended operating temperature and voltage ranges, and across process distribution. tSKD4 is defined as |Max − Min| differential propagation delay. Note 18: CL includes fixture capacitance and CD includes probe capacitance. 5 www.national.com DS91M047

Typical Performance Characteristics 20024050 Driver Rise Time as a Function of Temperature 20024051 Driver Fall Time as a Function of Temperature 20024058 Driver Output Signal Amplitude as a Function of Resistive Load 20024052 Driver Propagation Delay (tPLHD) as a Function of Temperature 20024053 Driver Propagation Delay (tPHLD) as a Function of Temperature 20024054 Driver Power Supply Current as a Function of Frequency 9 www.national.com DS91M047

Physical Dimensions inches (millimeters) unless otherwise noted 16-Lead (0.150″ Wide) Molded Small Outline Package, JEDEC Order Number DS91M047TMA www.national.com 10 DS91M047

11 www.national.com DS91M047

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