DS8880N

DS7880_11 TI1 | Alldatasheet

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DS7880,DS8880 DS7880 DS8880 High Voltage 7-Segment Decoder/Driver Literature Number: SNOSBN2A

DS7880/DS8880 High Voltage 7-Segment Decoder/Driver March 1988 DS7880/DS8880 High Voltage 7-Segment Decoder/Driver General Description The DS7880/DS8880 is custom designed to decode four lines of BCD and drive a gas-filled seven-segment display tube. Each output constitutes a switchable, adjustable current sink which provides constant current to the tube segment, even with high tube anode supply tolerance or fluctuation. These current sinks have a voltage compliance from 3V to at least 80V; typically the output current varies 1% for out- put voltage changes of 3 to 50V. Each bit line of the decod- er switches a current sink on or off as prescribed by the input code. Each current sink is ratioed to the b-output cur- rent as required for even illumination of all segments. Output currents may be varied over the 0.2 to 1.5 mA range for driving various tube types or multiplex operation. The output current is adjusted by connecting an external pro- gram resistor (R P) from V CC to the Program input in accord- ance with the programming curve. The circuit design pro- vides a one-to-one correlation between program input cur- rent and b-segment output current. The Blanking Input provides unconditional blanking of any output display, while the Ripple Blanking pins allow simple leading- or trailing-zero blanking.

Features

Y Adjustable output currentÐ0.2 to 1.5 mA Y High output breakdown voltageÐ110V typ Y Suitable for multiplex operation Y Blanking and Ripple Blanking provisions Y Low fan-in and low power Logic Diagram TL/F/5845–1 C1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A. Obsolete

Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. V CC 7V Input Voltage (Except BI) 6V Input Voltage (BI) V CC Segment Output Voltage 80V Power Dissipation 600 mW Maximum Power Dissipation * at 25 Cavity Package 1509 mW Molded Package 1476 mW *Derate cavity package 10.06 mW/ §C above 25 §C; derate molded package 11.81 mW/ §C above 25 §C. Transient Segment Output Current (Note 4) 50 mA Storage Temperature Range b65§Ct o a150§C Lead Temperature (Soldering, 4 sec.) 260 §C Operating Conditions Min Max Units Supply Voltage (V CC) DS7880 4.5 5.5 V DS8880 4.75 5.25 V Temperature (T DS7880 b55 a125 §C DS8880 0 a70 §C Electrical Characteristics (Notes 2 and 3) Symbol Parameter Conditions Min Typ Max Units VIH Logical ‘‘1’’ Input Voltage V CC e Min 2.0 V VIL Logical ‘‘0’’ Input Voltage V CC e Min 0.8 V VOH Logical ‘‘1’’ Output Voltage V CC e Min, I OUT eb 200 mA, RBO 2.4 3.7 V VOL Logical ‘‘0’’ Output Voltage V CC e Min, I OUT e 8 mA, RBO 0.13 0.4 V IIH Logical ‘‘1’’ Input Current V CC e Max, Except BI VIN e 2.4V 2 15 mA VIN e 5.5V 4 400 mA IIL Logical ‘‘0’’ Input Current V CC e Max, V IN e 0.4V Except BI b300 b600 mA BI b1.2 b2.0 mA ICC Power Supply Current V CC e Max, R p e 2.2k, All Inputs e 0V 27 43 mA VCD Input Diode Clamp Voltage V CC e Max, T A e 25§C, I IN e 12 mA b0.9 b1.5 V IO SEGMENT OUTPUTS All Outputs e 50V, Outputs a, f, and g 0.84 0.93 1.02 ‘‘ON’’ Current Ratio I OUTb e Ref. Outut c 1.12 1.25 1.38 Output d 0.90 1.00 1.10 Output e 0.99 1.10 1.21 Ib ON Output b ‘‘ON’’ Current V CC e 5V, V OUTb e 50V, Rp e 18.1k 0.15 0.20 0.25 mA All Other Outputs t 5V, Rp e 7.03k 0.45 0.50 0.55 mATA e 25§C Rp e 3.40k 0.90 1.00 1.10 mA Rp e 2.20k 1.35 1.50 1.65 mA VSAT Output Saturation Voltage V CC e Min, R p e 1kg5%, I OUTb e 2 mA, (Note 5) 0.8 2.5 V ICEX Output Leakage Current V OUT e 75V, BI e 0V, R p e 2.2k 0.003 3 mA VBR Output Breakdown Voltage I OUT e 250 mA, BI e 0V, R p e 2.2k 80 110 V tpd Propagation Delays BCD V CC e 5V, T A e 25§C 0.4 10 msInput to Segment Output BI to Segment Output 0.4 10 ms RBI to Segment Output 0.7 10 ms RBI to RBO 0.4 10 ms Note 1: ‘‘Absolute Maximum Rating’’ are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation. Note 2: Unless otherwise specified min/max limits apply across the b55§Ct o a125§C temperature range for the DS7880 and across the 0 §Ct o a70§C range for the DS8880. All typical values are for T A e 25§C and V CC e 5V. Note 3: All currents into device pins shown as positive, out of device pins as negative, all voltages referenced to ground unless otherwise noted. All values shown as max or min or absolute value basis. Note 4: In all applications transient segment output current must be limited to 50 mA. This may be accomplished in dc applications by connecting a 2.2k resistor from the anode-supply filter capacitor to the display anode, or by current limiting the anode driver in multiplex applications. Note 5: For saturation mode the segment output currents are externally limited and ratioed. Obsolete

TL/F/5845–2 Top View Order Number DS7880J, DS8880J or DS8880N See NS Package Number J16A or N16A Typical Performance Characteristics Output Current Programming On Currents vs Temperature Output Characteristic TL/F/5845–3 Obsolete

TL/F/5845–4 Truth Table TL/F/5845–5 Obsolete

Physical Dimensions inches (millimeters) Ceramic Dual-In-Line Package (J) Order Number DS7880J or DS8880J Obsolete

DS7880/DS8880 High Voltage 7-Segment Decoder/Driver Physical Dimensions inches (millimeters) (Continued) Molded Dual-In-Line Package (N) Order Number DS8880N LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.

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Arlington, TX 76017 Email: cnjwge @ tevm2.nsc.com Ocean Centre, 5 Canton Rd. Fax: 81-043-299-2408 Tel: 1(800) 272-9959 Deutsch Tel: ( a49) 0-180-530 85 85 Tsimshatsui, Kowloon Fax: 1(800) 737-7018 English Tel: ( a49) 0-180-532 78 32 Hong Kong Fran3ais Tel: ( a49) 0-180-532 93 58 Tel: (852) 2737-1600 Italiano Tel: ( a49) 0-180-534 16 80 Fax: (852) 2736-9960 National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications. Obsolete

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