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Technical content
WBFBP-02C Plastic-Encapsulate Diodes Schottky barrier Diode
DESCRIPTION
FEATURES
z Small surface mounting type z Low reverse current and low forward voltage z High reliability APPLICATION High speed switching for detection For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: 5 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limits Unit Peak reverse voltage VRM 40 V DC reverse voltage VR 30 V Mean rectifying current IO 30 mA Peak forward surge current IFSM 150 mA Electrical Ratings @Ta=25℃ Parameter Symbol Min Typ Max Unit Conditions Forward voltage VF 0.37 V I F=1mA Reverse current IR 0.5 μA V R=30V Capacitance between terminals CT 2 pF V R=1V,f=1MHZ WBFBP-02C (1.0×0.6×0.5) unit: mm Junction temperature Tj 15 ℃ Storage temperature Tstg -55~+150 ℃ Thermal Resistance from RθJA 1000 Junction to Ambient Power dissipation PD 100 mW ℃/ W DS751-40WB 2012-11 WILLAS ELECTRONIC CORP. Preliminary
Dimensions in inches and (millimeters) WBFBP-02C Rev.B .022(0.55) .026(0.65) .037(0.95) .010(0.25) .014(0.35) .018(0.45) .017(0.45)REF. .010(0.25) .014(0.35) .004(0.10) .000(0.01) .018(0.45) .022(0.55) 2012-11 WILLAS ELECTRONIC CORP. WBFBP-02C Plastic-Encapsulate Diodes DS751-40WB Preliminary