DS64EV100_15 TI1 | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 16

Technical content

www.ti.com SNLS232E –OCTOBER 2006–REVISED FEBRUARY 2013 DS64EV100ProgrammableSingleEqualizer Check forSamples: DS64EV100 1FEATURES DESCRIPTION The DS64EV100 programmable equalizerprovides 2• Equalizesup to24 dB lossat10 Gbps compensationfortransmissionmedium lossesand• Equalizesup to22 dB lossat6.4Gbps reduces the medium-induced deterministicjitterfor

  • 8 levelsofprogrammable equalization NRZ datachannel.The DS64EV100 isoptimizedfor operationup to 10 Gbps forboth cablesand FR4• Operates up to10 Gbps with30” FR4 traces traces.The equalizerchannel has eightlevelsof• Operates up to6.4Gbps with40” FR4 traces inputequalizationthatcan be programmed by three
  • 0.175UI residualdeterministicjitterat6.4 controlpins. Gbps with40” FR4 traces The equalizersupportsbothAC and DC-coupleddata• Single2.5Vor 3.3Vpower supply paths for long run lengthdata patternssuch as
  • Supports AC or DC-Coupling withwide input PRBS-31, and balancedcodes such as 8b/10b.The device uses differentialcurrent-modelogic(CML)common-mode
  • > 8 kV HBM ESD Rating
  • -40to85°C operatingtemperaturerange SimplifiedApplicationDiagram Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2006–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

BST_1 NC BST_2 GND OUT_+ OUT_- GND GND BST_0 DS64EV100 TOP VIEW DAP = GND DS64EV100 SNLS232E –OCTOBER 2006–REVISED FEBRUARY 2013 www.ti.com Pin Diagram Figure1. 14-PinWSON Package (3mm x 4 mm x 0.8mm, 0.5mm pitch) See Package Number NHK0014A Table1.Pin Descriptions I/O,Pin Name Pin # DescriptionType HIGH SPEED DIFFERENTIAL I/O IN+ 3 I,CML Invertingand non-invertingCML differentialinputstotheequalizer.An on-chip100Ω terminating IN− 4 resistorisconnectedbetween IN+ and IN-.RefertoFigure4. OUT+ 12 O, CML Invertingand non-invertingCML differentialoutputsfromtheequalizer.An on-chip50Ω OUT − 11 terminatingresistorconnectsOUT+ toVDD and OUT- toVDD . EQUALIZATION CONTROL BST_2 14 I,CMOS BST_2, BST_1, and BST_0 selecttheequalizerstrength.BST_2 isinternallypulledhigh.BST_1 BST_1 7 and BST_0 areinternallypulledlow. BST_0 8 POWER VDD 5 I,Power VDD = 2.5V±5% or3.3V±10%. VDD pinsshouldbe tiedtoVDD planethroughlowinductance path.A 0.01μF bypasscapacitorshouldbe connectedbetween each VDD pintoGND planes. GND 2,6,9,10, I,Power Ground reference.GND shouldbe tiedtoa solidgroundplanethrougha lowimpedance path. DAP PAD I,Power Ground reference.The exposed pad atthecenterofthepackage must be connectedtoground planeoftheboard. OTHER NC 1 Reserved.Do notconnect. These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates.

2 SubmitDocumentationFeedback Copyright© 2006–2013,Texas InstrumentsIncorporated

ProductFolderLinks:DS64EV100

www.ti.com SNLS232E –OCTOBER 2006–REVISED FEBRUARY 2013 AbsoluteMaximum Ratings (1)(2) SupplyVoltage(VDD ) −0.5Vto+4V CMOS InputVoltage −0.5Vto+4.0V CMOS OutputVoltage −0.5Vto+4.0V CML Input/OutputVoltage −0.5Vto+4.0V JunctionTemperature +150°C StorageTemperature −65°C to+150°C Lead Temperature Soldering,4 sec +260°C ESD Rating HBM, 1.5kΩ,100 pF > 8 kV EIAJ,0Ω,200 pF > 250 V ThermalResistance,θJA, No Airflow 40 °C/W (1) “AbsoluteMaximum Ratings”indicatelimitsbeyond whichdamage tothedevicemay occur,includinginoperabilityand degradationof devicereliabilityand/orperformance.Functionaloperationofthedeviceand/ornon-degradationattheAbsoluteMaximum Ratingsor otherconditionsbeyond thoseindicatedintheRecommended OperatingConditionsisnotimplied.The Recommended Operating Conditionsindicateconditionsatwhichthedeviceisfunctionaland thedeviceshouldnotbe operatedbeyond such conditions.Absolute Maximum Numbers areguaranteedfora junctiontemperaturerangeof–40°C to+125°C. Models arevalidatedtoMaximum Operating Voltagesonly. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsfor availabilityand specifications. Recommended OperatingConditions MIN TYP MAX UNIT SupplyVoltage(1) VDD2.5 toGND 2.375 2.5 2.625 V VDD3.3 toGND 3.0 3.3 3.6 V AmbientTemperature −40 25 +85 °C ElectricalCharacteristics Over recommended operatingsupplyand temperaturerangesunlessotherspecified.(1)(2) PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT POWER VDD3.3 140 200 mWPower SupplyP Consumption VDD2.5 100 150 mW

50 Hz – 100 Hz 100 mV P-PSupplyNoiseToleranceN 100 Hz – 10 MHz 40 mV P-P(3)

10 MHz – 1.6GHz 10 mV P-P LVTTL DC SPECIFICATIONS VDD2.VDD2.5 1.6 V VIH HighLevelInputVoltage VDD3.VIL 2.0 V VIL Low LevelInputVoltage −0.3 0.8 V IOH = –3 mA, VDD3.3 2.4 V VOH HighLevelInputVoltage IIN 2.0 V VOL Low LevelInputVoltage IOL = 3 mA 0.4 V (1) Typicalvaluesrepresentmost likelyparametricnorms atVDD = 3.3Vor2.5V,TA = 25°C.,and attheRecommended Operation Conditionsatthetimeofproductcharacterizationand arenotguaranteed. (2) The ElectricalCharacteristicstableslistguaranteedspecificationsunderthelistedRecommended OperatingConditionsexceptas otherwisemodifiedorspecifiedby theElectricalCharacteristicsConditionsand/orNotes.Typicalspecificationsareestimationsonlyand arenotguaranteed. (3) Allowedsupplynoise(mV P-P sinewave) undertypicalconditions. Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:DS64EV100

SNLS232E –OCTOBER 2006–REVISED FEBRUARY 2013 www.ti.com ElectricalCharacteristics(continued) Over recommended operatingsupplyand temperaturerangesunlessotherspecified.(1)(2) PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT POWER VIN = VDD +1.8 +15 µA IIN InputCurrent VIN = GND −15 0 µA InputLeakage Current VIN = GND, withinternalpull-downresistors +95 µA IIN-P withInternalPull- VIN = GND, withinternalpull-upresistors –20 µADown/Up Resistors CML RECEIVER INPUTS (IN+,IN−) AC-Coupled orDC-Coupled Requirement,DifferentialSourceTransmitLaunchVTX measurement atpointA. 400 1600 mV P-PSignalLevel(INdiff) Figure1 Differentialmeasurement atpointB .VINTRE InputThresholdVoltage 120 mV P-PFigure1 SupplyVoltageofVDDTX DC-Coupled Requirement 1.6 VDD VTransmittertoEQ DC-Coupled RequirementDifferentialmeasurement atInputCommon-Mode VDDTVICMDC pointA. VDDTX -0.8 VVoltage X-0.2Figure1 (4) DifferentialInputReturnR LI 100 MHz – 3.2GHz, withfixture’s effectde-embedded 10 dBLoss R IN InputResistance DifferentialAcrossIN+ and IN-.Figure4 85 100 115 Ω CML OUTPUTS (OUT+, OUT −) Differentialmeasurement withOUT+ and OUT-OutputDifferentialVOD terminatedby 50Ω toGND, AC-Coupled 550 620 725 mV P-PVoltageLevel(OUT diff)Figure2 Single-endedmeasurement DC-Coupled with50ΩOutputCommon-Mode VDD -VOCM terminations VDD -0.2 VVoltage 0.1(5) 20% to80% ofdifferentialoutputvoltage,measured within1”fromoutputpins.tR ,tF TransitionTime 20 60 psFigure2 (5) R O OutputResistance Single-endedtoVDD 42 50 58 Ω DifferentialOutput 100 MHz – 1.6GHz, withfixture’s effectde-R LO 10 dBReturnLoss embedded. IN+ = statichigh. DifferentialLow toHigh Propagationdelaymeasurement at50% VOD betweentPLHD 240 psPropagationDelay inputtooutput,100 Mbps Figure3 (5) DifferentialHightoLowtPHLD 240 psPropagationDelay EQUALIZATION 30”of6 milmicrostripFR4, EQ Setting0x06,PRBS-7ResidualDeterministicDJ1 (27-1)pattern 0.20 UIP-PJitterat10 Gbps (6)(7) 40”of6 milmicrostripFR4, EQ Setting0x06,PRBS-7ResidualDeterministicDJ2 (27-1)pattern 0.17 0.26 UIP-PJitterat6.4Gbps (6)(7) 40”of6 milmicrostripFR4, EQ Setting0x07,PRBS-7ResidualDeterministicDJ3 (27-1)pattern 0.12 0.20 UIP-PJitterat5 Gbps (6)(7) 40”of6 milmicrostripFR4, EQ Setting0x07,PRBS-7ResidualDeterministicDJ4 (27-1)pattern 0.10 0.16 UIP-PJitterat2.5Gbps (6)(7) (4) Measured withclock-like{1111100000}pattern. (5) Measured withclock-like{1111100000}pattern. (6) Specificationisguaranteedby characterizationatoptimalboostsettingand isnottestedinproduction. (7) Deterministicjitterismeasured atthedifferentialoutputs(pointC ofFigure1),minus thedeterministicjitterbeforethetestchannel(point A ofFigure1).Random jitterisremoved throughtheuse ofaveragingorsimilarmeans.

4 SubmitDocumentationFeedback Copyright© 2006–2013,Texas InstrumentsIncorporated

ProductFolderLinks:DS64EV100

20% 80% 80% 20% OUT diff = (OUT+) ± (OUT-) tFtR DS64EV100 INPUT OUTPUT 6 mils Trace Width, FR4 Microstrip Test Channel SMA Connector SMA Connector Signal Source A B C DS64EV100 www.ti.com SNLS232E –OCTOBER 2006–REVISED FEBRUARY 2013 ElectricalCharacteristics(continued) Over recommended operatingsupplyand temperaturerangesunlessotherspecified.(1)(2) PARAMETER TEST CONDITIONS MIN TYP (1) MAX UNIT POWER RJ Random Jitter (5)(8) 0.5 psrms (8) Random jittercontributedby theequalizerisdefinedas sqrt(JOUT 2 – JIN2).JOUT istherandom jitteratequalizeroutputsinpsrms,see pointC ofFigure1;JIN istherandom jitterattheinputoftheequalizerinpsrms,see Figure1. TIMING DIAGRAMS Figure2.TestSetup Diagram Figure3.CML Output TransitionTimes Figure4.PropagationDelay Timing Diagram Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:DS64EV100

Termination Equalizer Limiting Amplifier DC Offset Correction 3 3 BST_0 : BST_2 BST CNTL OUT OUT IN+ -IN VDD 10k IN + EQ IN - VDD 10k DS64EV100 SNLS232E –OCTOBER 2006–REVISED FEBRUARY 2013 www.ti.com TIMING DIAGRAMS (continued) Figure5.SimplifiedReceiverInputTerminationCircuit DS64EV100 APPLICATIONS INFORMATION The DS64EV100 isa programmable equalizeroptimizedforoperationup to10 Gbps forbackplaneand cable applications.The equalizerchannelconsistsof an equalizerstage,a limitingamplifier,a DC offsetcorrection block,and a CML driveras shown inFigure5. Figure6. SimplifiedBlock Diagram EQUALIZER BOOST CONTROL The equalizerchannelsupportseightprogrammablelevelsofequalizationboost,and iscontrolledby theBoost Set pins(BST_[2:0])inaccordancewithTable2.The eightlevelsofboostsettingsenablestheDS64EV100 to addressa widerangeofmedia lossand datarates. Table2. EQ Boost ControlTable 6 milMicrostripFR4 24 AWG Twin-AX Cable Channel Loss at3.2GHz Channel Loss at5 GHz BST_N Trace Length (in) Length (m) (db) (dB) [2,1,0] 0 0 0 0 0 0 0 5 2 5 6 0 0 1 10 3 7.5 10 0 1 0 15 4 10 14 0 1 1 20 5 12.5 18 1 0 0 (Default) 25 6 15 21 1 0 1 30 7 17 24 1 1 0 40 10 22 30 1 1 1 GENERAL RECOMMENDATIONS The DS64EV100 isa high performancecircuitcapableof deliveringexcellentperformance.Carefulattention must be paidtothedetailsassociatedwithhigh-speeddesignas wellas providinga cleanpower supply.Refer totheLVDS Owner ’s Manual formore detailedinformationon high-speeddesigntipstoaddresssignalintegrity designissues.

6 SubmitDocumentationFeedback Copyright© 2006–2013,Texas InstrumentsIncorporated

ProductFolderLinks:DS64EV100

www.ti.com SNLS232E –OCTOBER 2006–REVISED FEBRUARY 2013 PCB LAYOUT CONSIDERATIONS FOR DIFFERENTIAL PAIRS The CML inputsand outputsmust have a controlleddifferentialimpedance of100Ω.ItispreferabletorouteCML linesexclusivelyon one layeroftheboard,particularlyfortheinputtraces.The use ofviasshouldbe avoidedif possible.Ifviasmust be used,theyshouldbe used sparinglyand must be placedsymmetricallyforeach sideof a givendifferentialpair.Route theCML signalsaway fromothersignalsand noisesourceson theprintedcircuit board.See AN-1187 foradditionalinformationon WSON packages. POWER SUPPLY BYPASSING Two approachesarerecommended toensurethattheDS64EV100 isprovidedwithan adequatepower supply. First,thesupply(VDD )and ground(GND) pinsshouldbe connectedtopower planesroutedon adjacentlayersof the printedcircuitboard.The layerthicknessof the dielectricshouldbe minimizedso thatthe VDD and GND planes createa low inductancesupply with distributedcapacitance.Second, carefulattentionto supply bypassingthroughthe properuse of bypass capacitorsis required.A 0.01μF bypass capacitorshould be connectedtoeach VDD pinsuch thatthecapacitorisplacedas closeas possibletotheDS64EV100. Smaller body size capacitorscan help facilitateproper component placement.Additionally,three capacitorswith capacitanceintherange of2.2μF to10 μF shouldbe incorporatedinthepower supplybypassingdesignas well.These capacitorscan be eithertantalumor an ultra-lowESR ceramicand shouldbe placedas closeas possibletotheDS64EV100. DC COUPLING The DS64EV100 supportsbothAC couplingwithexternalac couplingcapacitor,and DC couplingtoitsupstream driver,ordownstream receiver.WithDC coupling,usersmust ensuretheinputsignalcommon mode iswithinthe rangeoftheelectricalspecificationVICMDC and thedeviceoutputisterminatedwith50 Ω toVDD . TYPICAL PERFORMANCE EYE DIAGRAMS AND CURVES Figure7.EqualizedSignal Figure8.EqualizedSignal (40inFR4, 2.5Gbps, PRBS7, 0x07 Setting) (40inFR4, 5 Gbps, PRBS7, 0x07 Setting) Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:DS64EV100

SNLS232E –OCTOBER 2006–REVISED FEBRUARY 2013 www.ti.com Figure9.EqualizedSignal Figure10.EqualizedSignal (40inFR4, 6.4Gbps, PRBS7, 0x06 Setting) (40inFR4, 6.4Gbps, PRBS31, 0x06 Setting) Figure11.EqualizedSignal Figure12.EqualizedSignal (30inFR4, 10 Gbps, PRBS7, 0x06 Setting) (10m 24 AWG Twin-AX Cable,6.4Gbps, PRBS7, 0x06 Setting) Figure13.EqualizedSignal (32inTyco XAUI Backplane,6.25Gbps, PRBS7, 0x06 Setting)

8 SubmitDocumentationFeedback Copyright© 2006–2013,Texas InstrumentsIncorporated

ProductFolderLinks:DS64EV100

001 010 011 100 101 110 111 EQ SETTING (BST_2, BST_1, BST_0) 0.1 0.2 0.3 0.4 0.5 DJ (UI 000 40 in 30 in 20 in 10 in 6 in DS64EV100 www.ti.com SNLS232E –OCTOBER 2006–REVISED FEBRUARY 2013 Copyright© 2006–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:DS64EV100

SNLS232E –OCTOBER 2006–REVISED FEBRUARY 2013 www.ti.com

REVISION HISTORY

Changes from RevisionD (February2013)toRevisionE Page

10 SubmitDocumentationFeedback Copyright© 2006–2013,Texas InstrumentsIncorporated

ProductFolderLinks:DS64EV100

www.ti.com 8-Oct-2015 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish (6) MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples DS64EV100SD/NOPB ACTIVE WSON NHK 14 1000 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 D64E1SD (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

www.ti.com 8-Oct-2015 Addendum-Page 2

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 2-Sep-2015 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) DS64EV100SD/NOPB WSON NHK 14 1000 210.0 185.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 2-Sep-2015 Pack Materials-Page 2

www.ti.com SDA14A (Rev A)

Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment. TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily performed. TI assumes no liability for applications assistance or the design of Buyers’products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’products and applications, Buyers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from TI under the patents or other intellectual property of TI. Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice. TI is not responsible or liable for any such statements. Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use of any TI components in safety-critical applications. In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and requirements. Nonetheless, such components are subject to these terms. No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties have executed a special agreement specifically governing such use. Only those TI components which TI has specifically designated as military grade or “enhanced plastic”are designed and intended for use in military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and regulatory requirements in connection with such use. TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of non-designated products, TI will not be responsible for any failure to meet ISO/TS16949. Products Applications Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps DSP dsp.ti.com Energy and Lighting www.ti.com/energy Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial Interface interface.ti.com Medical www.ti.com/medical Logic logic.ti.com Security www.ti.com/security Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video RFID www.ti-rfid.com OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com Wireless Connectivity www.ti.com/wirelessconnectivity Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265 Copyright © 2015, Texas Instruments Incorporated