DS36277TMX TI1 | Alldatasheet

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www.ti.com SNLS086E –JULY 1998–REVISED APRIL 2013 DominantModeMultipointTransceiver Check forSamples: DS36277 1FEATURES DESCRIPTION The DS36277 Dominant Mode MultipointTransceiver 2• FAILSAFE Receiver,RO = HIGH for: is designed for use on bi-directionaldifferential– OPEN Inputs busses.Itisoptimalforuse on Interfacesthatutilize – TerminatedInputs Society of Automotive Engineers (SAE) J1708 ElectricalStandard.– SHORTED Inputs

  • OptimalforUse inSAE J1708 Interfaces The device is similarto standard TIA/EIA-485 transceivers,but differsin enablingscheme. The• Compatible withPopularInterfaceStandards: Driver'sInputisnormallyexternallytiedLOW, thus– TIA/EIA-485and TIA/EIA-422-A providingonlytwo states:Active(LOW), or Disabled – CCITT Recommendation V.11 (OFF).When thedriverisactive,thedominantmode isLOW, conversely,when thedriverisdisabled,the• Bi-DirectionalTransceiver bus ispulledHIGH by externalbiasresistors.– Designed forMultipointTransmission The receiverprovides a FAILSAFE featurethat• Wide Bus Common Mode Range ensuresa known outputstatewhen theInterfaceisin– (−7V to+12V) the followingconditions:FloatingLine,IdleLine(no
  • AvailableinPDIP and SOIC Packages activedrivers),and Line FaultConditions(open or short).The receiveroutputisHIGH forthe following conditions:Open Inputs,TerminatedInputs(50Ω),or Shorted Inputs.FAILSAFE is a highlydesirable feature when the transceiversare used with AsynchronousControllerssuch as UARTs. Connection and Logic Diagram See Package Number D (R-PDSO-G8) or P (R-PDIP-T8) Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 1998–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SNLS086E –JULY 1998–REVISED APRIL 2013 www.ti.com TruthTable Driver Inputs Outputs DE DI DO/RI DO /RI L L L H L H H L H X Z Z Receiver Inputs Output RE DO/RI–DO /RI RO L ≥ 0 mV H L ≤ −500 mV L L SHORTED H L OPEN H H X Z These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. AbsoluteMaximum Ratings(1)(2) Value Unit SupplyVoltage(VCC ) 7 V InputVoltage(DE ,RE ,and DI) 5.5 V DriverOutputVoltage/ReceiverInputVoltage −10V to+15 V ReceiverOutputVoltage(RO) 5.5 V Maximum Package Power Dissipation@ +25°C P Package (derate9.3mW/ °C above +25°C) 1168 mW D Package (derate5.8mW/ °C above +25°C) 726 mW StorageTemperatureRange −65°C to+150 °C Lead Temperature(Soldering4 sec.) 260 °C ESD Rating(HBM, 1.5kΩ,100 pF) 7.0 kV (1) “AbsoluteMaximum Ratings”arethosevaluesbeyond whichthesafetyofthedevicecannotbe specified.They arenotmeant toimply thatthedevicesshouldbe operatedattheselimits.The tablesof“ElectricalCharacteristics”specifyconditionsfordeviceoperation. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. Recommended OperatingConditions Min Max Units SupplyVoltage,VCC 4.75 5.25 V Bus Voltage −7 +12 V OperatingTemperature(TA)DS36277T −40 +85 °C

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www.ti.com SNLS086E –JULY 1998–REVISED APRIL 2013 ElectricalCharacteristics(1)(2) Over recommended SupplyVoltageand OperatingTemperatureranges,unlessotherwisespecified. Symbol Parameter Conditions Min Typ Max Units DRIVER CHARACTERISTICS VOD DifferentialOutputVoltage IO = 0 mA (No Load) 1.5 3.6 6 V VoDO OutputVoltage IO = 0 mA (OutputtoGND) 0 6 V VoDO OutputVoltage 0 6 V VT1 DifferentialOutputVoltage R L = 54Ω (485) (Figure1) 1.3 2.2 5.0 V (TerminationLoad) R L = 100Ω (422) 1.7 2.6 5.0 V ΔVT1 BalanceofVT1 R L = 54Ω See (3) −0.2 0.2 V |VT1 − VT1 | R L = 100Ω −0.2 0.2 V VOS DriverCommon Mode R L = 54Ω (Figure1) 0 2.5 3.0 V OutputVoltage R L = 100Ω 0 2.5 3.0 V ΔVOS BalanceofVOS R L = 54Ω See (3) −0.2 0.2 V |VOS − VOS | R L = 100Ω −0.2 0.2 V VOH OutputVoltageHigh IOH = −22 mA (Figure2) 2.7 3.7 V VOL OutputVoltageLow IOL = +22 mA 1.3 2 V IOSD DriverShort-Circuit VO = +12V (Figure3) 92 290 mA OutputCurrent VO = −7V −187 −290 mA RECEIVER CHARACTERISTICS VTH DifferentialInputHigh VO = VOH ,IO = −0.4mA −0.150 0 V ThresholdVoltage(4) −7V ≤ VCM ≤ +12V VTL DifferentialInputLow VO = VOL ,IO = 8.0mA −0.5 −0.230 V ThresholdVoltage(4) −7V ≤ VCM ≤ +12V VHST Hysteresis(5) VCM = 0V 80 mV IIN LineInputCurrent OtherInput= 0V VI= +12V 0.5 1.5 mA (VCC = 4.75V,5.25V,0V) DE = VIH (6) VI= −7V −0.5 −1.5 mA IOSR ShortCircuitCurrent VO = 0V RO −15 −32 −85 mA IOZ TRI-STATE Leakage Current VO = 0.4to2.4V −20 1.4 +20 μA VOH OutputHighVoltage VID = 0V,IOH = −0.4mA 2.3 3.7 V (Figure12) VID = OPEN, IOH = −0.4mA 2.3 3.7 V VOL OutputLow Voltage VID = −0.5V,IOL = +8 mA 0.3 0.7 V (Figure12) VID = −0.5V,IOL = +16 mA 0.3 0.8 V R IN InputResistance 10 20 kΩ DEVICE CHARACTERISTICS VIH HighLevelInputVoltage DE , 2.0 VCC V RE ,VIL Low LevelInputVoltage GND 0.8 Vor IIH HighLevelInputCurrent VIH = 2.4V 20 μADI IIL Low LevelInputCurrent VIL= 0.4V −100 μA VCL InputClamp Voltage ICL = −18 mA −0.7 −1.5 V ICC OutputLow Voltage DE = 0V,RE = 0V,DI = 0V 39 60 mA SupplyCurrentICCR DE = 3V,RE = 0V,DI = 0V 24 50 mA(No Load) ICCD DE = 0V,RE = 3V,DI = 0V 40 75 mA ICCX DE = 3V,RE = 3V,DI = 0V 27 45 mA (1) Currentintodevicepinsisdefinedas positive.Currentoutofdevicepinsisdefinedas negative.Allvoltagesarereferencedtoground unlessotherwisespecified. (2) AlltypicalsaregivenforVCC = 5.0Vand TA = +25°C. (3) Δ |VT1|and Δ |VOS |arechanges inmagnitudeofVT1 and VOS ,respectively,thatoccurwhen theinputchanges state. (4) Thresholdparameterlimitsspecifiedas an algebraicvalueratherthanby magnitude. (5) Hysteresisdefinedas VHST = VTH − VTL. (6) IIN includesthereceiverinputcurrentand driverTRI-STATE leakagecurrent. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:DS36277

SNLS086E –JULY 1998–REVISED APRIL 2013 www.ti.com SwitchingCharacteristics(1) Over recommended SupplyVoltageand OperatingTemperatureranges,unlessotherwisespecified. Symbol Parameter Conditions Min Typ Max Units DRIVER CHARACTERISTICS tPLHD Diff.Prop.DelayLow toHigh R L = 54Ω 8 17 60 ns tPHLD Diff.Prop.DelayHightoLow C L = 50 pF 8 19 60 ns tSKD Diff.Skew (|tPLHD –tPHLD |) C D = 50 pF 2 10 ns tr Diff.RiseTime (Figure4 and Figure5) 11 60 ns tf Diff.FallTime 11 60 ns tPLH Prop.DelayLow toHigh R L = 27Ω,C L = 15 pF 22 85 ns (Figure6 and Figure7)tPHL Prop.DelayHightoLow 25 85 ns tPZH EnableTime Z toHigh R L = 110Ω 25 60 ns C L = 50 pFtPZL EnableTime Z toLow 30 60 ns(Figure8 – Figure11 ) tPHZ DisableTime HightoZ 16 60 ns tPLZ DisableTime Low toZ 11 60 ns RECEIVER CHARACTERISTICS tPLH Prop.DelayLow toHigh VID = −1.5Vto+1.5V 15 37 90 ns C L = 15 pFtPHL Prop.DelayHightoLow 15 43 90 ns(Figure13 and Figure14) tSK Skew (|tPLH –tPHL |) 6 15 ns tPZH EnableTime Z toHigh C L = 15 pF 12 60 ns (Figure15 and Figure16)tPZL EnableTime Z toLow 28 60 ns tPHZ DisableTime HightoZ 20 60 ns tPLZ DisableTime Low toZ 10 60 ns (1) AlltypicalsaregivenforVCC = 5.0Vand TA = +25°C.

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www.ti.com SNLS086E –JULY 1998–REVISED APRIL 2013 PARAMETER MEASUREMENT INFORMATION Figure1. DriverVT1 and VOS TestCircuit Figure2. DriverVOH and VOL TestCircuit Figure3. DriverShortCircuitTestCircuit C L includesprobeand straycapacitance The inputpulseissuppliedby a generatorhavingthefollowingcharacteristics:f=1.0MHz, 50% dutycycle,Tr and tf<6.0ns,Zo=50Ω Figure4. DriverDifferentialPropagationDelay and TransitionTime TestCircuit Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:DS36277

SNLS086E –JULY 1998–REVISED APRIL 2013 www.ti.com Figure5. DriverDifferentialPropagationDelays and TransitionTimes C L includesprobeand straycapacitance The inputpulseissuppliedby a generatorhavingthefollowingcharacteristics:f=1.0MHz, 50% dutycycle,Tr and tf<6.0ns,Zo=50Ω Figure6. DriverPropagationDelay TestCircuit Figure7. DriverPropagationDelays

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www.ti.com SNLS086E –JULY 1998–REVISED APRIL 2013 S1 toDO forDI = 3V S1 toDO forDI = 0V C L includesprobeand straycapacitance The inputpulseissuppliedby a generatorhavingthefollowingcharacteristics:f=1.0MHz, 50% dutycycle,Tr and tf<6.0ns,Zo=50Ω Figure8. DriverTRl-STATE TestCircuit(tPZH ,tPHZ ) Figure9. DriverTRI-STATE Delays (tPZH ,tPHZ ) S1 toDO forDI = 0V S1 toDO forDI = 3V C L includesprobeand straycapacitance The inputpulseissuppliedby a generatorhavingthefollowingcharacteristics:f=1.0MHz, 50% dutycycle,Tr and tf<6.0ns,Zo=50Ω Figure10. DriverTRI-STATE TestCircuit(tPZL ,tPLZ ) Figure11. DriverTRl-STATE Delays (tPZL ,tPLZ ) Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:DS36277

SNLS086E –JULY 1998–REVISED APRIL 2013 www.ti.com Figure12. ReceiverVOH and VOL CL includesprobeand straycapacitance The inputpulseissuppliedby a generatorhavingthefollowingcharacteristics:f=1.0MHz, 50% dutycycle,Tr and tf<6.0ns,Zo=50Ω Figure13. ReceiverPropagationDelay TestCircuit Figure14. ReceiverPropagationDelays C L includesprobeand straycapacitance The inputpulseissuppliedby a generatorhavingthefollowingcharacteristics:f=1.0MHz, 50% dutycycle,Tr and tf<6.0ns,Zo=50Ω Diodesare1N916 orequivalent. Figure15. ReceiverTRI-STATE Delay TestCircuit

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www.ti.com SNLS086E –JULY 1998–REVISED APRIL 2013 S1 1.5V S2 OPEN S3 CLOSED S1 1.5V S2 CLOSED S3 CLOSED S1 −1.5V S2 CLOSED S3 OPEN S1 −1.5V S2 CLOSED S3 CLOSED Figure16. ReceiverEnable and DisableTiming Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:DS36277

SNLS086E –JULY 1998–REVISED APRIL 2013 www.ti.com TypicalPerformance Characteristics DifferentialOutput Voltage DifferentialOutput Voltage vs Output Current vs Output Current Figure17. Figure18. DriverVOH DriverVOH vs vs IOH IOH vs vs VCC Temperature Figure19. Figure20. DriverVOL DriverVOL vs vs IOL IOL vs vs VCC Temperature Figure21. Figure22.

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www.ti.com SNLS086E –JULY 1998–REVISED APRIL 2013 TypicalPerformance Characteristics(continued) ReceiverVOH ReceiverVOH vs vs IOH IOH vs vs VCC Temperature Figure23. Figure24. ReceiverVOL ReceiverVOL vs vs IOL IOL vs vs VCC Temperature Figure25. Figure26. Supply Current Supply Current vs vs Supply Voltage Temperature Figure27. Figure28. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:DS36277

SNLS086E –JULY 1998–REVISED APRIL 2013 www.ti.com TypicalPerformance Characteristics(continued) VoltageOutput vs VoltageInput(Hysteresis) Figure29. TYPICAL APPLICATIONS INFORMATION Figure30. SAE J1708 Node withExternalBias Resistorsand Filters

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www.ti.com SNLS086E –JULY 1998–REVISED APRIL 2013

REVISION HISTORY

Changes from RevisionD (April2013)toRevisionE Page Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 13 ProductFolderLinks:DS36277

www.ti.com 7-Oct-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Device Marking (4/5) Samples DS36277TMX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 DS362 77TM (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 11-Oct-2013 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) DS36277TMX/NOPB SOIC D 8 2500 367.0 367.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 11-Oct-2013 Pack Materials-Page 2

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