DS32W SEMIPOWER | Alldatasheet

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Technical content

Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A

FEATURES

  • Metal silicon junction, majority carrier conduction
  • For surface mounted applications
  • Low power loss, high efficiency
  • High forward surge current capability
  • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications MECHANICAL DATA
  • Case: SOD-123FL
  • Terminals: Solderable per MIL-STD-750, Method 2026
  • Approx. Weight:15mg 0.00048oz PINNING PIN

DESCRIPTION

Marking Code: DS32W ---S32 DS34W ---S34 DS36W ---S36 DS38W ---S38 DS310W ---S310 DS312W ---S312 DS315W ---S315 DS320W ---S320 Simplified outline SOD-123FL and symbol Maximum DC Blocking Voltage Parameter Maximum Repetitive Peak Reverse Voltage Maximum RMS voltage Maximum Average Forward Rectified Current Typical Junction Capacitance 20 40 V 14 28 V V 3.0 0.5 -55 ~ +150 A A V mA pF Units Absolute Maximum Ratings and Electrical characteristics Ratings at ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % 25 °C 20 40 Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Max Instantaneous Forward Voltage at 3 A Maximum DC Reverse Current at Rated DC Reverse Voltage Operating Junction Temperature Range DS32W DS34W DS36W DS38W DS310W DS312W DS315W DS320W T = 25°Ca T =100°Ca VRRM VRMS VDC IF(AV) IFSM VF IR Cj Tj Symbols TstgStorage Temperature Range 100 100 0.55 0.70 0.85 250 -55 ~ +150 °C 120 120 150 105 150 200 140 200 0.95 0.3 160 80Typical Thermal Resistance RθJA °C/W 7080 70 84 DS32W THRU DS320W Page 1 of 3 1 2 （1） （2） Measured at 1 MHz and applied reverse voltage of 4 V D.C （2） （1） Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0

Fig.2 Typical Reverse Characteristics Instaneous Current ( μA)Reverse 20 40 60 800 T =25J °C Percent of Rated Peak Reverse Voltage（%） 100 100 101 102 103 104 T =75J °C Fig.4 Typical Junction Capacitance 0.1 Junction Capacitance ( pF) Reverse Voltage (V) 100 200 500 1001 DS32W/DS34W DS36W-DS320W T =25J °C 0.1 0 0.4 1.4 Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forward Voltage (V) 1.0 Fig.1 Forward Current Derating Curve 0.5 1.0 1.5 2.0 2.5 3.0 0.0 25 50 75 100 125 150 Average Forward Current (A) DS32W/DS34W DS36W-DS320W DS32W/DS34W DS36W/DS38W DS310W/DS312W DS315W/DS320W 0.01 100 100 Fig.6- Typical Transient Thermal Impedance Transient Thermal Impedance（ /W）°C t, Pulse Duration（sec） 0.1 1 10 200 10 100 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles at 60Hz 8.3 ms Single Half Sine Wave (JEDEC Method) 100 DS32W~DS38W DS310W~DS312W Single phase half-wave 60 Hz resistive or inductive load 3.5 Page 2 of 3 Case Temperature (°C) T =100J °C DS32W THRU DS320W Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0

Plastic surface mounted package; 2 leads SOD-123FL A A C ∠ALL ROUND V AM e UNIT mm max min mil max min 7.9 4.7 114 102 150 138 A C D E HE ∠ 1.1 0.8 e Bottom View HE ∠ALL ROUND E D E g pad pad Top View 0.9 0.7 g g The recommended mounting pad size 2.0 (79) 1.2 (47) mm (mil)Unit： 1.2 (47) 1.2 (47) Page 3 of 3 DS32W THRU DS320W Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 2016 Rev 1.0