DS32W_V01 YFWDIODE | Alldatasheet
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DS32W THRU DS320W SOD123FL 1 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current – 3.0 A
FEATURES
Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Lead free in comply with EU RoHS 2011/65/EU directives MECHANICAL DATA Case: SOD-123FL Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 15mg / 0.000 48oz Pinning 1.Cathode 2.Anode 1 2 SOD123FL Absolute Maximum Ratings and Electrical characteristics Ratings at 25 ° ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % Parameter Symbols DS32W DS34W DS36W DS38W DS310W DS312W DS315W DS320W Units Maximum Repetitive Peak Reverse Voltage VRRM 20 40 60 80 100 120 150 200 V Maximum RMS voltage VRMS 14 28 42 56 70 84 105 140 V Maximum DC Blocking Voltage VDC 20 40 60 80 100 120 150 200 V Maximum Average Forward Rectified Current IF(AV) 3.0 A Peak Forward Surge Current, 8.3ms Single Half Sine- wave Superimposed On Rated Load (JEDEC method) IFSM 80 70 A Maximum Instantaneous Forward Voltage at 3 A VF 0.55 0.70 0.85 0.95 V Maximum Instantaneous Reverse Current TA = 25°C at Rated DC Reverse Voltage TA = 100°C IR 0.5 0.3 5 mA Typical Junction Capacitance（1） Cj 250 160 pF Typical Thermal Resistance （2） RθJA 80 °C/W Operating Junction Temperature Range Tj -55 ~ +150 °C Storage Temperature Range Tstg -55 ~ +150 °C （1）Measured at 1 MHz and applied reverse voltage of 4 V D.C Marking Code DS32W K32 S32 DS34W K34 S34 DS36W K36 S36 DS38W K38 S38 DS310W K310 S310 DS312W K312 S312 DS315W K315 S315 DS320W K320 S320
DS32W THRU DS320W SOD123FL 2 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Fig.2 Typical Reverse Characteristics Instaneous Current ( μA)Reverse 20 40 60 800 T =25J °C Percent of Rated Peak Reverse Voltage（%） 100 100 101 102 103 104 T =75J °C Fig.4 Typical Junction Capacitance 0.1 Junction Capacitance ( pF) Reverse Voltage (V) 100 200 500 1001 DS32W/DS34W DS36W-DS320W T =25J °C 0.1 0 0.4 1.4 Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forward Voltage (V) 1.0 Fig.1 Forward Current Derating Curve 0.5 1.0 1.5 2.0 2.5 3.0 0.0 25 50 75 100 125 150 Average Forward Current (A) DS32W/DS34W DS36W-DS320W DS32W/DS34W DS36W/DS38W DS310W/DS312W DS315W/DS320W 0.01 100 100 Fig.6- Typical Transient Thermal Impedance Transient Thermal Impedance（ /W）°C t, Pulse Duration（sec） 0.1 1 10 200 10 100 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles at 60Hz 8.3 ms Single Half Sine Wave (JEDEC Method) 100 DS32W~DS38W DS310W~DS312W Single phase half-wave 60 Hz resistive or inductive load 3.5 Case Temperature (°C) T =100J °C
DS32W THRU DS320W SOD123FL 3 / 3 www.yfwdiode.com Dongguan YFW Electronics Co, Ltd. Package Outline Plastic surface mounted package; 2leads SOD-123FL The recommended mounting pad size Summary of Packing Options Package Packing Description Packing Quantity Industry Standard Tape/Reel,13”reel 10000 EIA-481-1 SOD-123FL Tape/Reel,7”reel 3000 EIA-481-1 A A C ∠ALL ROUND V AM e UNIT mm max min mil max min 7.9 4.7 114 102 150 138 A C D E HE ∠ 1.1 0.8 e Bottom View HE ∠ALL ROUND E D E g pad pad Top View 0.9 0.7 g g 2.0 (79) 1.2 (47) mm (mil)Unit： 1.2 (47) 1.2 (47)