DS32W YFWDIODE | Alldatasheet

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Technical content

K K K K K K K K DS32W THRU DS320W Surface Mount Schottky Barrier Rectifier Reverse Voltage - 20 to 200 V Forward Current - 3.0A

FEATURES

  • Metal silicon junction, majority carrier conduction
  • For surface mounted applications
  • Low power loss, high efficiency
  • High forward surge current capability
  • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications MECHANICAL DATA
  • Case: SOD-123FL
  • Terminals: Solderable per MIL-STD-750, Method 2026
  • Approx. Weight:15m g 0.00048oz PINNING PIN

DESCRIPTION

Marking Code: DS32W --- 32 DS34W --- 34 DS36W --- 36 DS38W --- 38 DS310W --- 310 DS312W --- 312 DS315W --- 315 DS320W --- 320 Simplified outline SOD-123FL and symbol 1 2 S 3 2 0 Maximum DC Blocking Voltage Parameter Maximum Repetitive Peak Revers e Voltage Maximum RMS voltage Maximum Average Forward Rectified Current 1）Typical Junction Capacitance 20 40 V 14 28 V V 3.0 0.5 -55 ~ +125 A A V mA pF Units Absolute Maximum Ratings and Electrical characteristics Ratings at ambient temperature unless otherwise specified.Sing le phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 % 25 °C 20 40 Peak Forward Surge Current,8.3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) Max Instantaneous Forwar d Voltage at 3 A Maximum DC Reverse Current at Rated DC Reverse Voltage Operating Junction Temperature Range DS32W DS34W DS36W DS38W DS310W DS312W DS315W DS320W T = 25 °Ca T =100 °Ca VRRM VRMS VDC IF(AV) IFSM VF IR Cj Tj Symbols TstgStorage Temperature Range 100 100 0.55 0.70 0.85 250 -55 ~ +150 °C 120 120 150 105 150 200 140 200 0.95 0.3 160 2） 40Typical Thermal Resistance RθJA °C/W 1） Measured at 1MHz and applied reverse voltage of 4 V D.C. 7080 70 84

Fig.2 Typical Reverse Characteristics Instaneous Curren t ( μA)Reverse 20 40 60 800 T= 2 5J °C T= 1 0 0J °C Percent of Rated Peak Reverse Voltage （%） 100 10 0 101 10 2 10 3 10 4 T= 7 5J °C Fig.4 Typical Junction Capacitance 0.1 Junction Capacitance ( p F ) Reverse Voltage (V) 100 200 500 1001 DS32W/DS34W DS36W-DS320W T= 2 5J °C 0.1 0 0.4 1.4 Fig.3 Typical Forward Characteristic Instaneous Forward Current (A) Instaneous Forwar d Voltage (V) 1.0 Fig.1 Forward Current Derating Curve 0.5 1.0 1.5 2.0 2.5 3.0 0.0 25 50 75 100 125 150 Average Forward Current (A) Ambient Temperature ( °C) DS32W/DS34W DS36W-DS320W DS32W/DS34W DS36W/DS38W DS310W/DS312W DS315W/DS320W 0.01 100 100 Fig.6- Typical Transient Thermal Impedance Transient Thermal Impedance （ /W）°C t, Pulse Duration （sec） 0.1 1 10 200 10 100 Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Peak A)Forward Surage Current ( Number of Cycles at 60Hz 8.3 ms Single Half Sine Wave (JEDEC Method) 100 DS32W~DS38W DS310W~DS312W Single phase half-wave 60 Hz resistive or inductive load 3.5 100LFM DS32W THRU DS320W

K K K K K K K K Marking Type number Marking code DS32W DS34W DS36W DS38W DS310W DS312W DS315W DS320W 310 312 315 320 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123FL A A C ∠ALL ROUND VAM e UNIT mm max min mil max min 7.9 4.7 114 102 150 138 ACDE HE ∠ 1.1 0.8 e Bottom View HE ∠ALL ROUND E D E gpad pad Top View 0.9 0.7 g g The recommended mounting pad size 2.0 (79) 1.2 (47) mm (mil)Unit ： 1.2 (47) 1.2 (47) DS32W THRU DS320W