DS26C31M

DS26C31M TI | Alldatasheet

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DS26C31M,DS26C31T www.ti.com SNLS375B –JUNE 1998–REVISED APRIL 2013 DS26C31T/DS26C31MCMOS QuadTRI-STATE® DifferentialLineDriver Check forSamples: DS26C31M ,DS26C31T 1FEATURES DESCRIPTION The DS26C31 is a quad differentialline driver 23• TTL InputCompatible designedfordigitaldata transmissionover balanced• TypicalPropagationDelays:6 ns lines.The DS26C31T meets allthe requirementsof

• TypicalOutput Skew: 0.5ns EIA standardRS-422 whileretainingthe low power characteristicsof CMOS. The DS26C31M is• Outputs WillNot Load Linewhen VCC = 0V compatiblewithEIA standardRS-422; however,one• DS26C31T Meets theRequirements ofEIA exceptionin test methodology is taken (1). ThisStandard RS-422 enables the constructionof serialand terminal
• Operationfrom Single5V Supply interfaces while maintaining minimal power consumption.• TRI-STATE Outputs forConnection toSystem Buses The DS26C31 acceptsTTL orCMOS inputlevelsand translatesthese to RS-422 outputlevels.This part• Low QuiescentCurrent uses specialoutputcircuitrythatenablesthe drivers• AvailableinSurfaceMount to power down withoutloadingdown the bus. This• Mil-Std-883CCompliant devicehas enableand disablecircuitrycommon toall fourdrivers.The DS26C31 ispincompatibleto the AM26LS31 and theDS26LS31. All inputsare protectedagainstdamage due to electrostaticdischargeby diodestoVCC and ground. (1) The DS26C31M (−55°C to+125°C) istestedwithVOUT between +6V and 0V whileRS-422A conditionis+6V and −0.25V. Connection Diagrams Figure1. Dual-In-LinePackage, Top View See Package Number D0016A or NFG0016E For Complete MilitaryProduct Specifications, refertotheappropriateSMD or MDS. See Package Number NAJ0020A, NFE0016A or NAD0016A Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2TRI-STATE isa registeredtrademarkofTexas Instruments. 3Allothertrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 1998–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

DS26C31M,DS26C31T SNLS375B –JUNE 1998–REVISED APRIL 2013 www.ti.com Figure2. 20-Lead Ceramic LeadlessChip Carrier(NAJ) TruthTable(1) ENABLE ENABLE Input Non-Inverting Inverting Output Output L H X Z Z Allother L L H combinationsof H H L enableinputs (1) L = Low logicstate X = Irrelevant H = Highlogicstate Z = TRI-STATE (highimpedance)

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DS26C31M,DS26C31T www.ti.com SNLS375B –JUNE 1998–REVISED APRIL 2013 These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates. AbsoluteMaximum Ratings(1)(2)(3) SupplyVoltage(VCC ) −0.5Vto7.0V DC InputVoltage(VIN) −1.5VtoVCC +1.5V DC OutputVoltage(VOUT ) −0.5Vto7V Clamp DiodeCurrent(IIK,IOK ) ±20 mA DC OutputCurrent,perpin(IOUT ) ±150 mA DC VCC orGND Current,perpin(ICC ) StorageTemperatureRange (TSTG ) −65°C to+150°C Max. Power Dissipation(PD )@25 °C (4) Ceramic“NFE ”Pkg. 2419 mW Plastic“NFG ”Pkg. 1736 mW SOIC “D ”Pkg. 1226 mW Ceramic“NAD ”Pkg. 1182 mW Ceramic“NAJ ”Pkg. 2134 mW Lead Temperature(TL) (Soldering,4 sec.) 260°C Thisdevicedoes notmeet 2000V ESD Rating.(5) (1) Unlessotherwisespecified,allvoltagesarereferencedtoground.Allcurrentsintodevicepinsarepositive,allcurrentsoutofdevice pinsarenegative. (2) AbsoluteMaximum Ratingsarethosevaluesbeyond whichthesafetyofthedevicecannotbe verified.They arenotmeant toimplythat thedeviceshouldbe operatedattheselimits.The tableof“ElectricalCharacteristics”provideconditionsforactualdeviceoperation. (3) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTexas InstrumentsSalesOffice/Distributorsforavailabilityand specifications. (4) Ratingsapplytoambienttemperatureat25°C. Above thistemperaturederateNFG package at13.89mW/ °C, NFE package 16.13 mW/ °C, D package 9.80mW/ °C, NAJ package 12.20mW/ °C, and NAD package 6.75mW/ °C. (5) ESD Rating:HBM (1.5kΩ,100 pF);Inputs≥ 1500V;Outputs≥ 1000V;EIAJ (0Ω,200 pF)≥ 350V OperatingConditions Min Max Units SupplyVoltage(VCC ) 4.50 5.50 V DC InputorOutputVoltage (VIN,VOUT ) 0 VCC V OperatingTemperatureRange (TA) DS26C31T −40 +85 °C DS26C31M −55 +125 °C InputRiseorFallTimes (tr,tf) 500 ns Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:DS26C31M DS26C31T

DS26C31M,DS26C31T SNLS375B –JUNE 1998–REVISED APRIL 2013 www.ti.com DC ElectricalCharacteristics VCC = 5V ± 10% (unlessotherwisespecified)(1) Symbol Parameter Conditions Min Typ Max Units VIH HighLevelInputVoltage 2.0 V VIL Low LevelInputVoltage 0.8 V VOH HighLevelOutputVoltage VIN = VIH orVIL, 2.5 3.4 V IOUT = −20 mA VOL Low LevelOutputVoltage VIN = VIH orVIL, 0.3 0.5 V IOUT = 20 mA VT DifferentialOutputVoltage R L = 100Ω 2.0 3.1 V See (2) |VT|− |VT | DifferenceInDifferentialOutput R L = 100Ω 0.4 V See (2) VOS Common Mode OutputVoltage R L = 100Ω 1.8 3.0 V See (2) |VOS − VOS | DifferenceInCommon Mode R L = 100Ω 0.4 V Output See (2) IIN InputCurrent VIN = VCC ,GND, VIH,orVIL ±1.0 μA ICC QuiescentSupplyCurrent(3) DS26C31T VIN = VCC orGND 200 500 μA IOUT = 0 μA VIN = 2.4Vor0.5V(3) 0.8 2.0 mA DS26C31M VIN = VCC orGND 200 500 μA IOUT = 0 μA VIN = 2.4Vor0.5V(3) 0.8 2.1 mA IOZ TRI-STATE OutputLeakage VOUT = VCC orGND Current ENABLE = VIL ±0.5 ±5.0 μA ENABLE = VIH ISC OutputShortCircuitCurrent VIN = VCC orGND (2)(4) −30 −150 mA IOFF OutputLeakage CurrentPower DS26C31T VOUT = 6V 100 μA Off(2) VCC = 0V VOUT = −0.25V −100 μA DS26C31M VOUT = 6V 100 μA VCC = 0V VOUT = 0V (5) −100 μA (1) Unlessotherwisespecified,min/max limitsapplyacrosstherecommended operatingtemperaturerange.AlltypicalsaregivenforVCC = 5V and TA = 25°C. (2) See EIA SpecificationRS-422 forexacttestconditions. (3) Measured perinput.AllotherinputsatVCC orGND. (4) Thisisthecurrentsourcedwhen a highoutputisshortedtoground.Onlyone outputata timeshouldbe shorted. (5) The DS26C31M (−55°C to+125°C) istestedwithVOUT between +6V and 0V whileRS-422A conditionis+6V and −0.25V. SwitchingCharacteristics VCC = 5V ±10%, tr ≤ 6 ns,tf ≤ 6 ns (Figure3,Figure4,Figure5,Figure6)(1) Symbol Parameter Conditions Min Typ Max Units DS26C31T CS26C31M tPLH ,tPHL PropagationDelaysInputtoOutput S1 Open 2 6 11 14 ns Skew (2) S1 Open 0.5 2.0 3.0 ns tTLH ,tTHL DifferentialOutputRiseAnd Fall S1 Open 6 10 14 ns Times tPZH OutputEnableTime S1 Closed 11 19 22 ns tPZL OutputEnableTime S1 Closed 13 21 28 ns (1) Unlessotherwisespecified,min/max limitsapplyacrosstherecommended operatingtemperaturerange.AlltypicalsaregivenforVCC = 5V and TA = 25°C. (2) Skew isdefinedas thedifferenceinpropagationdelaysbetween complementaryoutputsatthe50% point.

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DS26C31M,DS26C31T www.ti.com SNLS375B –JUNE 1998–REVISED APRIL 2013 SwitchingCharacteristics(continued) VCC = 5V ±10%, tr ≤ 6 ns,tf ≤ 6 ns (Figure3,Figure4,Figure5,Figure6)(1) Symbol Parameter Conditions Min Typ Max Units DS26C31T CS26C31M tPHZ OutputDisableTime(3) S1 Closed 5 9 12 ns tPLZ OutputDisableTime(3) S1 Closed 7 11 14 ns C PD Power DissipationCapacitance(4) 50 pF C IN InputCapacitance 6 pF (3) OutputdisabletimeisthedelayfromENABLE orENABLE beingswitchedtotheoutputtransistorsturningoff.The actualdisabletimes arelessthanindicateddue tothedelayadded by theRC timeconstantoftheload. (4) C PD determinestheno loaddynamicpower consumption,PD = C PD VCC 2 f+ ICC VCC ,and theno loaddynamiccurrentconsumption,IS = C PD VCC f+ ICC . Comparison TableofSwitchingCharacteristicsinto“LS-Type” Load VCC = 5V,TA = 25°C, tr ≤ 6 ns,tf ≤ 6 ns (Figure4,Figure6,Figure7,Figure8) (1) DS26C31T DS26LS31C Symbol Parameter Conditions Units Typ Max Typ Max tPLH ,tPHL PropagationDelaysInputtoOutput C L = 30 pF S1 Closed 6 8 10 15 ns S2 Closed Skew See (2) C L = 30 pF S1 Closed 0.5 1.0 2.0 6.0 ns S2 Closed tTHL ,tTLH DifferentialOutputRiseand Fall C L = 30 pF Times S1 Closed 4 6 ns S2 Closed tPLZ OutputDisableTime(3) C L = 10 pF S1 Closed 6 9 15 35 ns S2 Open tPHZ OutputDisableTime(3) C L = 10 pF S1 Open 4 7 15 25 ns S2 Closed tPZL OutputEnableTime C L = 30 pF S1 Closed 14 20 20 30 ns S2 Open tPZH OutputEnableTime C L = 30 pF S1 Open 11 17 20 30 ns S2 Closed (1) Thistableisprovidedforcomparisonpurposesonly.The valuesinthistablefortheDS26C31 reflecttheperformanceofthedevicebut arenottestedorverified. (2) Skew isdefinedas thedifferenceinpropagationdelaysbetween complementaryoutputsatthe50% point. (3) OutputdisabletimeisthedelayfromENABLE orENABLE beingswitchedtotheoutputtransistorsturningoff.The actualdisabletimes arelessthanindicateddue tothedelayadded by theRC timeconstantoftheload. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:DS26C31M DS26C31T

DS26C31M,DS26C31T SNLS375B –JUNE 1998–REVISED APRIL 2013 www.ti.com Logic Diagram AC TestCircuitand SwitchingTime Waveforms Note:C1 = C2 = C3 = 40 pF (IncludingProbe and JigCapacitance),R1 = R2 = 50Ω,R3 = 500Ω. Figure3. AC TestCircuit Figure4. PropagationDelays Figure5. Enable and DisableTimes

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DS26C31M,DS26C31T www.ti.com SNLS375B –JUNE 1998–REVISED APRIL 2013 Inputpulse;f= 1 MHz, 50%; tr ≤ 6 ns,tf≤ 6 ns Figure6. DifferentialRise and FallTimes Figure7. Load AC TestCircuitfor“LS-Type” Load Figure8. Enable and DisableTimes for“LS-Type” Load TypicalApplications *RT isoptionalalthoughhighlyrecommended toreducereflection. Figure9. Two-Wire Balanced System, RS-422 Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:DS26C31M DS26C31T

DS26C31M,DS26C31T SNLS375B –JUNE 1998–REVISED APRIL 2013 www.ti.com TypicalPerformance Characteristics DifferentialPropagationDelay DifferentialPropagationDelay vs Temperature vs Power Supply Voltage Figure10. Figure11. DifferentialSkew vs DifferentialSkew vs Power Temperature Supply Voltage Figure12. Figure13. DifferentialTransitionTime DifferentialTransitionTime vs Temperature vs Power Supply Voltage Figure14. Figure15.

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DS26C31M,DS26C31T www.ti.com SNLS375B –JUNE 1998–REVISED APRIL 2013 TypicalPerformance Characteristics(continued) Complementary Skew vs Complementary Skew vs Temperature Power Supply Voltage Figure16. Figure17. DifferentialOutput Voltage DifferentialOutput Voltage vs Output Current vs Output Current Figure18. Figure19. Output High Voltagevs Output High Voltagevs Output High Current Output High Current Figure20. Figure21. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:DS26C31M DS26C31T

DS26C31M,DS26C31T SNLS375B –JUNE 1998–REVISED APRIL 2013 www.ti.com TypicalPerformance Characteristics(continued) Output Low Voltagevs Output Low Voltagevs Output Low Current Output Low Current Figure22. Figure23. Supply Current Output Low Voltagevs vs Temperature Output Low Current Figure24. Figure25. Output Low Voltagevs Supply Current Output Low Current vs Temperature Figure26. Figure27.

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DS26C31M,DS26C31T www.ti.com SNLS375B –JUNE 1998–REVISED APRIL 2013 TypicalPerformance Characteristics(continued) Supply Currentvs No Load Supply Current Power Supply Voltage vs Data Rate Figure28. Figure29. Loaded Supply Current Output ShortCircuitCurrent vs Data Rate vs Temperature Figure30. Figure31. Output ShortCircuitCurrent vs Power Supply Voltage Figure32. Copyright© 1998–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:DS26C31M DS26C31T

DS26C31M,DS26C31T SNLS375B –JUNE 1998–REVISED APRIL 2013 www.ti.com

REVISION HISTORY

Changes from RevisionA (April2013)toRevisionB Page

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www.ti.com 15-Apr-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Top-Side Markings (4) Samples DS26C31TM ACTIVE SOIC D 16 48 TBD Call TI Call TI -40 to 85 DS26C31TM DS26C31TM/NOPB ACTIVE SOIC D 16 48 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 DS26C31TM DS26C31TMX ACTIVE SOIC D 16 2500 TBD Call TI Call TI -40 to 85 DS26C31TM DS26C31TMX/NOPB ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU SN Level-1-260C-UNLIM -40 to 85 DS26C31TM DS26C31TN ACTIVE PDIP NFG 16 25 TBD Call TI Call TI -40 to 85 DS26C31TN DS26C31TN/NOPB ACTIVE PDIP NFG 16 25 Green (RoHS & no Sb/Br) CU SN Level-1-NA-UNLIM -40 to 85 DS26C31TN (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

www.ti.com 15-Apr-2013 Addendum-Page 2 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 24-Apr-2013 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) DS26C31TMX SOIC D 16 2500 367.0 367.0 35.0 DS26C31TMX/NOPB SOIC D 16 2500 367.0 367.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 24-Apr-2013 Pack Materials-Page 2

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