DS25BR120 TI | Alldatasheet

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www.ti.com SNLS256E –MARCH 2007–REVISED APRIL 2013 DS25BR1203.125GbpsLVDSBufferwithTransmitPre-Emphasis Check forSamples: DS25BR120 1FEATURES DESCRIPTION The DS25BR120 is a singlechannel 3.125 Gbps 2• DC -3.125Gbps Low Jitter,High Noise LVDS buffer optimized for high-speed signalImmunity,Low Power Operation transmissionover lossyFR-4 printedcircuitboard• Four LevelsofTransmitPre-Emphasis Drive backplanes and balanced metalliccables. Fully Lossy Backplanes and Cables differentialsignalpaths ensure exceptionalsignal integrityand noiseimmunity.• On-Chip 100Ω Inputand Output Termination MinimizesInsertionand Return Losses, The DS25BR120 featuresfourlevelsofpre-emphasisReduces Component Count,and Minimizes (PE) foruse as an optimizeddriverdevice.Other Board Space LVDS deviceswithsimilarIO characteristicsinclude thefollowingproducts.The DS25BR110 featuresfour• 7 kV ESD on LVDS I/OpinsProtectsAdjoining levelsofequalizationforuse as an optimizedreceiverComponents device,while the DS25BR100 featuresboth pre-• Small 3 mm x 3 mm 8-WSON Space Saving emphasis and equalizationforuse as an optimizedPackage repeaterdevice.The DS25BR150 isa buffer/repeater with the lowestpower consumption and does not APPLICATIONS feature transmit pre-emphasis nor receive equalization.• Clock and Data Buffering

  • MetallicCable Driving Wide inputcommon mode range allowsthereceiver to accept signalswith LVDS, CML and LVPECL• FR-4 Driving levels;the outputlevelsare LVDS. A very small package footprintrequiresminimal space on the boardwhiletheflow-throughpinoutallowseasy board layout.The differentialinputs and outputs are internallyterminatedwitha 100Ω resistorto lower device input and output return losses, reduce component countand furtherminimizeboardspace. TypicalApplication Pleasebe aware thatan importantnoticeconcerningavailability,standardwarranty,and use incriticalapplicationsof Texas Instrumentssemiconductorproductsand disclaimerstheretoappearsattheend ofthisdatasheet. 2Alltrademarksarethepropertyoftheirrespectiveowners. PRODUCTION DATA informationiscurrentas ofpublicationdate. Copyright© 2007–2013,Texas InstrumentsIncorporatedProductsconform to specificationsper the terms of the Texas Instrumentsstandardwarranty.Productionprocessingdoes not necessarilyincludetestingofallparameters.

SNLS256E –MARCH 2007–REVISED APRIL 2013 www.ti.com Block Diagram Pin Diagram PIN DESCRIPTIONS Pin Name Pin Name Pin Type Pin Description PE1 1 Input Pre-emphasisselectpin. IN+ 2 Input Non-invertingLVDS inputpin. IN- 3 Input InvertingLVDS inputpin. PE0 4 Input Pre-emphasisselectpin. NC 5 NA "NO CONNECT" pin. OUT- 6 Output InvertingLVDS outputpin. OUT+ 7 Output Non-invertingLVDS Outputpin. VCC 8 Power Power supplypin. GND DAP Power Ground pad (DAP -dieattachpad) Pre-Emphasis TruthTable PE1 PE0 Pre-emphasis Level 0 0 Off 0 1 Low (Approx.3 dB at1.56GHz) 1 0 Medium (Approx.6 dB at1.56GHz) 1 1 High(Approx.9 dB at1.56GHz) These deviceshave limitedbuilt-inESD protection.The leadsshouldbe shortedtogetherorthedeviceplacedinconductivefoam duringstorageorhandlingtopreventelectrostaticdamage totheMOS gates.

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www.ti.com SNLS256E –MARCH 2007–REVISED APRIL 2013 AbsoluteMaximum Ratings(1)(2) SupplyVoltage(VCC ) −0.3Vto+4V LVCMOS InputVoltage(PE0,PE1) −0.3Vto(VCC + 0.3V) LVDS InputVoltage(IN+,IN−) −0.3Vto+4V DifferentialInputVoltage|VID| 1.0V LVDS OutputVoltage(OUT+, OUT −) −0.3Vto(VCC + 0.3V) LVDS DifferentialOutputVoltage((OUT+)-(OUT −)) 0V to1.0V LVDS OutputShortCircuitCurrentDuration 5 ms JunctionTemperature +150°C StorageTemperatureRange −65°C to+150°C Lead TemperatureRange Soldering(4sec.) +260°C Maximum Package Power Dissipationat25°C DerateNGQ Package 16.7mW/ °C above +25°C Package ThermalResistance θJA +60.0°C/W θJC +12.3°C/W ESD Susceptibility HBM (3) ≥7 kV MM (4) ≥250V CDM (5) ≥1250V (1) “AbsoluteMaximum Ratings”indicatelimitsbeyond whichdamage tothedevicemay occur,includinginoperabilityand degradationof devicereliabilityand/orperformance.Functionaloperationofthedeviceand/ornon-degradationattheAbsoluteMaximum Ratingsor otherconditionsbeyond thoseindicatedintheRecommended OperatingConditionsisnotimplied.The Recommended Operating Conditionsindicateconditionsatwhichthedeviceisfunctionaland thedeviceshouldnotbe operatedbeyond such conditions. (2) IfMilitary/Aerospacespecifieddevicesarerequired,pleasecontacttheTISalesOffice/Distributorsforavailabilityand specifications. (3) Human Body Model,applicablestd.JESD22-A114C (4) Machine Model,applicablestd.JESD22-A115-A (5) FieldInducedCharge DeviceModel,applicablestd.JESD22-C101-C Recommended OperatingConditions Min Typ Max Units SupplyVoltage(VCC ) 3.0 3.3 3.6 V ReceiverDifferentialInputVoltage(VID) 0 1.0 V OperatingFreeAirTemperature(TA) −40 +25 +85 °C ElectricalCharacteristics Over recommended operatingsupplyand temperaturerangesunlessotherwisespecified.(1)(2)(3) Symbol Parameter Conditions Min Typ Max Units LVCMOS INPUT DC SPECIFICATIONS (PE0,PE1) VIH HighLevelInputVoltage 2.0 VCC V VIL Low LevelInputVoltage GND 0.8 V IIH HighLevelInputCurrent VIN = 3.6V 0 ±10 μA VCC = 3.6V IIL Low LevelInputCurrent VIN = GND 0 ±10 μA VCC = 3.6V (1) The ElectricalCharacteristicstableslistensuredspecificationsunderthelistedRecommended OperatingConditionsexceptas otherwisemodifiedorspecifiedby theElectricalCharacteristicsConditionsand/orNotes.Typicalspecificationsareestimationsonlyand arenotensured. (2) Currentintodevicepinsisdefinedas positive.Currentoutofdevicepinsisdefinedas negative.Allvoltagesarereferencedtoground exceptVOD and ΔVOD . (3) Typicalvaluesrepresentmost likelyparametricnorms forVCC = +3.3V and TA = +25°C, and attheRecommended OperationConditions atthetimeofproductcharacterizationand arenotensured. Copyright© 2007–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 3 ProductFolderLinks:DS25BR120

SNLS256E –MARCH 2007–REVISED APRIL 2013 www.ti.com ElectricalCharacteristics(continued) Over recommended operatingsupplyand temperaturerangesunlessotherwisespecified.(1)(2)(3) Symbol Parameter Conditions Min Typ Max Units VCL InputClamp Voltage ICL = −18 mA, VCC = 0V -0.9 −1.5 V LVDS OUTPUT DC SPECIFICATIONS (OUT+, OUT-) VOD DifferentialOutputVoltage 250 350 450 mV R L = 100ΩΔVOD Change inMagnitudeofVOD forComplimentary -35 35 mVOutputStates VOS OffsetVoltage 1.05 1.2 1.375 V R L = 100ΩΔVOS Change inMagnitudeofVOS forComplimentary -35 35 mVOutputStates IOS OutputShortCircuitCurrent(4) OUT toGND -35 -55 mAPE0 = PE1 = 0 OUT toVCC 7 55 mAPE0 = PE1 = 0 C OUT OutputCapacitance Any LVDS OutputPintoGND 1.2 pF R OUT OutputTerminationResistor Between OUT+ and OUT- 100 Ω LVDS INPUT DC SPECIFICATIONS (IN+,IN-) VID InputDifferentialVoltage 0 1 V VTH DifferentialInputHighThreshold VCM = +0.05V orVCC -0.05V 0 +100 mV VTL DifferentialInputLow Threshold −100 0 mV VCMR Common Mode VoltageRange VID = 100 mV 0.05 VCC - V 0.05 VIN = 3.6Vor0V ±1 ±10 μAIIN InputCurrent VCC = 3.6Vor0V C IN InputCapacitance Any LVDS InputPintoGND 1.7 pF R IN InputTerminationResistor Between IN+ and IN- 100 Ω SUPPLY CURRENT ICC SupplyCurrent PE0 = 0,PE1 = 0 35 43 mA (4) Outputshortcircuitcurrent(IOS )isspecifiedas magnitudeonly,minus signindicatesdirectiononly. AC ElectricalCharacteristics(1) Over recommended operatingsupplyand temperaturerangesunlessotherwisespecified.(2)(3) Symbol Parameter Conditions Min Typ Max Units LVDS OUTPUT AC SPECIFICATIONS (OUT+, OUT-) tPHLD DifferentialPropagationDelayHightoLow 350 465 ps R L = 100Ω tPLHD DifferentialPropagationDelayLow toHigh 350 465 ps tSKD1 PulseSkew |tPLHD − tPHLD |(4) 45 100 ps tSKD2 ParttoPartSkew (5) 45 150 ps tLHT RiseTime 80 150 ps R L = 100Ω tHLT FallTime 80 150 ps (1) Specificationisensuredby characterizationand isnottestedinproduction. (2) The ElectricalCharacteristicstableslistensuredspecificationsunderthelistedRecommended OperatingConditionsexceptas otherwisemodifiedorspecifiedby theElectricalCharacteristicsConditionsand/orNotes.Typicalspecificationsareestimationsonlyand arenotensured. (3) Typicalvaluesrepresentmost likelyparametricnorms forVCC = +3.3V and TA = +25°C, and attheRecommended OperationConditions atthetimeofproductcharacterizationand arenotensured. (4) tSKD1 ,|tPLHD − tPHLD |,isthemagnitudedifferenceindifferentialpropagationdelaytimebetween thepositivegoingedge and thenegative goingedge ofthesame channel. (5) tSKD2 ,ParttoPartSkew, isdefinedas thedifferencebetween theminimum and maximum specifieddifferentialpropagationdelays.This specificationappliestodevicesatthesame VCC and within5°C ofeach otherwithintheoperatingtemperaturerange.

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www.ti.com SNLS256E –MARCH 2007–REVISED APRIL 2013 AC ElectricalCharacteristics(1)(continued) Over recommended operatingsupplyand temperaturerangesunlessotherwisespecified.(2)(3) Symbol Parameter Conditions Min Typ Max Units JITTER PERFORMANCE WITH PE = OFF PE0 = 0,PE1 = 0 tDJ1A VID = 350 mV 2.5Gbps 9 31 ps DeterministicJitter(PeaktoPeak) VCM = 1.2VtDJ2A No TestChannels(7) K28.5(NRZ) 3.125Gbps 16 40 ps PE0 = 0,PE1 = 0 tTJ1A VID = 350 mV 2.5Gbps 0.05 0.13 UIP-P TotalJitter(PeaktoPeak) VCM = 1.2VtTJ2A No TestChannels(8) PRBS-23 (NRZ) 3.125Gbps 0.09 0.16 UIP-P PE0 = 0,PE1 = 0 JITTER PERFORMANCE WITH PE = LOW (Figure5 and Figure6) tRJ1B VID = 350 mV 2.5Gbps 0.5 1.3 ps Random Jitter(RMS Value) VCM = 1.2VtRJ2B TestChannelA (6) Clock(RZ) 3.125Gbps 0.5 1.3 ps PE0 = 1,PE1 = 0 tDJ1B VID = 350 mV 2.5Gbps 17 31 ps DeterministicJitter(PeaktoPeak) VCM = 1.2VtDJ2B TestChannelA (7) K28.5(NRZ) 3.125Gbps 18 40 ps PE0 = 1,PE1 = 0 tTJ1B VID = 350 mV 2.5Gbps 0.09 0.14 UIP-P TotalJitter(PeaktoPeak) VCM = 1.2VtTJ2B TestChannelA (8) PRBS-23 (NRZ) 3.125Gbps 0.12 0.19 UIP-P PE0 = 1,PE1 = 0 JITTER PERFORMANCE WITH PE = MEDIUM (Figure5 and Figure6) tRJ1C VID = 350 mV 2.5Gbps 0.5 1.2 ps Random Jitter(RMS Value) VCM = 1.2VtRJ2C TestChannelB (6) Clock(RZ) 3.125Gbps 0.5 1.2 ps PE0 = 0,PE1 = 1 tDJ1C VID = 350 mV 2.5Gbps 21 44 ps DeterministicJitter(PeaktoPeak) VCM = 1.2VtDJ2C TestChannelB (7) K28.5(NRZ) 3.125Gbps 27 48 ps PE0 = 0,PE1 = 1 tTJ1C VID = 350 mV 2.5Gbps 0.09 0.16 UIP-P TotalJitter(PeaktoPeak) VCM = 1.2VtTJ2C TestChannelB (8) PRBS-23 (NRZ) 3.125Gbps 0.13 0.23 UIP-P PE0 = 0,PE1 = 1 JITTER PERFORMANCE WITH PE = HIGH (Figure5 and Figure6) tRJ1D VID = 350 mV 2.5Gbps 0.5 1.2 ps Random Jitter(RMS Value) VCM = 1.2VtRJ2D TestChannelC (6) Clock(RZ) 3.125Gbps 0.5 1.2 ps PE0 = 1,PE1 = 1 tDJ1D VID = 350 mV 2.5Gbps 30 65 ps DeterministicJitter(PeaktoPeak) VCM = 1.2VtDJ2D TestChannelC (7) K28.5(NRZ) 3.125Gbps 30 58 ps PE0 = 1,PE1 = 1 tTJ1D VID = 350 mV 2.5Gbps 0.09 0.20 UIP-P TotalJitter(PeaktoPeak) VCM = 1.2VtTJ2D TestChannelC (8) PRBS-23 (NRZ) 3.125Gbps 0.13 0.22 UIP-P PE0 = 1,PE1 = 1 (6) Measured on a clockedge witha histogramand an accumulationof1500 histogramhits.Inputstimulusjitterissubtractedgeometrically. (7) Testedwitha combinationofthe1100000101 (K28.5+character)and 0011111010 (K28.5-character)patterns.Inputstimulusjitteris subtractedalgebraically. (8) Measured on an eye diagramwitha histogramand an accumulationof3500 histogramhits.Inputstimulusjitterissubtracted. Copyright© 2007–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 5 ProductFolderLinks:DS25BR120

50: MS 50: MS 50: MS 50: MS L=4" L=4" L=4" L=4" TEST CHANNEL CHARACTERIZATION BOARD DS25BR120 PATTERN GENERATOR OSCILLOSCOPE R L OUT+ OUT- IN+ IN- Signal Generator R D R D R L VOL OUT+ OUT- IN+ IN- Power Supply Power Supply VOH DS25BR120 SNLS256E –MARCH 2007–REVISED APRIL 2013 www.ti.com

APPLICATION INFORMATION

Figure1. DifferentialDriverDC TestCircuit AC TEST CIRCUITS AND TIMING DIAGRAMS Figure2. DifferentialDriverAC TestCircuit Figure3. PropagationDelay Timing Diagram Figure4. LVDS Output TransitionTimes PRE-EMPHASIS TEST CIRCUITS Figure5. Pre-emphasis Performance TestCircuit

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100: Differential T-Line LVDS 50: MS 50: MS 50: MS 50: MS L=1" L=1" L=1"L=1" L = A, B or C 100: Diff. Stripline DS25BR120 www.ti.com SNLS256E –MARCH 2007–REVISED APRIL 2013 Figure6. TestChannel Description TestChannel Loss Characteristics The testchannelwas fabricatedwithPolycladPCL-FR-370-Laminate/PCL-FRP-370Prepregmaterials(Dielectric constantof3.7and Loss Tangentof0.02).The edge coupleddifferentialstriplineshave thefollowinggeometries: TraceWidth(W) = 5 mils,Gap (S)= 5 mils,Height(B)= 16 mils. TestChannel Length InsertionLoss (dB) (inches) 500 MHz 750 MHz 1000 MHz 1250 MHz 1500 MHz 1560 MHz Device Operation INPUT INTERFACING The DS25BR120 acceptsdifferentialsignalsand allowssimpleAC or DC coupling.With a wide common mode range,theDS25BR120 can be DC-coupledwithallcommon differentialdrivers(i.e.LVPECL, LVDS, CML). The followingthreefiguresillustratetypicalDC-coupled interfaceto common differentialdrivers.Note thatthe DS25BR120 inputsareinternallyterminatedwitha 100Ω resistor. Figure7. TypicalLVDS DriverDC-Coupled InterfacetoDS25BR120 Input Copyright© 2007–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 7 ProductFolderLinks:DS25BR120

100: 100: Differential T-Line DS25BR120 OUT+ OUT- 150-250: 100: Differential T-Line LVDS Receiver IN+ IN- 100: LVPECL Driver 150-250: OUT+ OUT- DS25BR120 IN+ IN- 50:50: VCC CML3.3V or CML2.5V 100: Differential T-Line DS25BR120 SNLS256E –MARCH 2007–REVISED APRIL 2013 www.ti.com Figure8. TypicalCML DriverDC-Coupled InterfacetoDS25BR120 Input Figure9. TypicalLVPECL DriverDC-Coupled InterfacetoDS25BR120 Input OUTPUT INTERFACING The DS25BR120 outputssignalscompliantto the LVDS standard.Itcan be DC-coupled to most common differentialreceivers.The followingfigureillustratestypicalDC-coupledinterfacetocommon differentialreceivers and assumes thatthereceivershave highimpedance inputs.Whilemost differentialreceivershave a common mode inputrange thatcan accommodate LVDS compliantsignals,itisrecommended to check the respective receiver'sdatasheetpriortoimplementingthesuggestedinterfaceimplementation. Figure10. TypicalDS25BR120 Output DC-Coupled Interfacetoan LVDS, CML or LVPECL Receiver

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4.50 3.75 3.00 2.25 1.50 0.75 0 6 12 18 24 30 VCC = 3.3V TA =25° C NRZ PRBS-7 TJ = 0.5 UI Maximum Data Rate (Gbps) CAT5e LENGTH (m) w/ PE and/or EQ w/o PE and EQ VCC = 3.3V TA = 25° C SUPPLY CURRENT (mA) FREQUENCY (GHz) PE = Off PE = Low PE = Medium PE = High 4.50 3.75 3.00 2.25 1.50 0.75 0 3 6 9 12 15 VCC = 3.3V TA = 25° C NRZ PRBS-7 TJ = 0.25 UI MAXIMUM DATA RATE (Gbps) CAT7 LENGTH (m) w/o PE w/ PE 4.50 3.75 3.00 2.25 1.50 0.75 0 6 12 18 24 30 VCC = 3.3V TA = 25° C NRZ PRBS-7 TJ = 0.25 UI MAXIMUM DATA RATE (Gbps) CAT5e LENGTH (m) w/ PE and/or EQ w/o PE and EQ 4.50 3.75 3.00 2.25 1.50 0.75 0 3 6 9 12 15 VCC = 3.3V TA = 25° C NRZ PRBS-7 TJ = 0.25 UI MAXIMUM DATA RATE (Gbps) CAT5e LENGTH (m) w/o PE w/ PE DS25BR120 www.ti.com SNLS256E –MARCH 2007–REVISED APRIL 2013 TYPICAL PERFORMANCE CHARACTERISTICS Figure11.Maximum Data Rate as a FunctionofCAT5e Figure12.Maximum Data Rate as a FunctionofCAT5e (Belden1700A) Length (Belden1700A) Length DS25BR120 Used as a Driver DS25BR110 Used as a Receiver Figure13.Power Supply Currentas a Functionof Figure14.Maximum Data Rate as a FunctionofCAT7 Frequency (Siemon Tera)Length Figure15.Maximum Data Rate as a FunctionofCAT5e (Belden1700A) Length DS25BR120 Used as a Driver DS25BR110 Used as a Receiver Copyright© 2007–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 9 ProductFolderLinks:DS25BR120

SNLS256E –MARCH 2007–REVISED APRIL 2013 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) Figure16.A 2.5Gbps NRZ PRBS-7 After40" Figure17.A 3.125Gbps NRZ PRBS-7 After40" DifferentialFR-4 Stripline DifferentialFR-4 Stripline V:125 mV /DIV,H:75 ps /DIV V:125 mV /DIV,H:50 ps /DIV Figure18.An Equalized(withPE) 2.5Gbps NRZ PRBS-7 Figure19.An Equalized(withPE) 3.125Gbps NRZ PRBS-7 After40" After40" DifferentialFR-4 Stripline DifferentialFR-4 Stripline V:125 mV /DIV,H:75 ps /DIV V:125 mV /DIV,H:50 ps /DIV

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www.ti.com SNLS256E –MARCH 2007–REVISED APRIL 2013

REVISION HISTORY

Changes from RevisionD (April2013)toRevisionE Page Copyright© 2007–2013,Texas InstrumentsIncorporated SubmitDocumentationFeedback 11 ProductFolderLinks:DS25BR120

www.ti.com 15-Apr-2013 Addendum-Page 1 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3) Op Temp (°C) Top-Side Markings (4) Samples DS25BR120TSD/NOPB ACTIVE WSON NGQ 8 1000 Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 2R120 DS25BR120TSDX/NOPB ACTIVE WSON NGQ 8 4500 Green (RoHS & no Sb/Br) CU SN Level-3-260C-168 HR -40 to 85 2R120 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Top-Side Marking for that device. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Reel Diameter (mm) Reel Width W1 (mm) (mm) (mm) (mm) (mm) W (mm) Pin1 Quadrant PACKAGE MATERIALS INFORMATION www.ti.com 24-Apr-2013 Pack Materials-Page 1

*All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) DS25BR120TSD/NOPB WSON NGQ 8 1000 213.0 191.0 55.0 DS25BR120TSDX/NOPB WSON NGQ 8 4500 367.0 367.0 35.0 PACKAGE MATERIALS INFORMATION www.ti.com 24-Apr-2013 Pack Materials-Page 2

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