DS2030Y-100

DS2030Y MAXIM | Alldatasheet

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Technical content

Features

♦ Single-Piece, Reflowable, 27mm2 PBGA Package Footprint ♦ Internal ML Battery and Charger ♦ Unconditionally Write-Protects SRAM when VCC is Out-of-Tolerance ♦ Automatically Switches to Battery Supply when VCC Power Failures Occur ♦ Internal Power-Supply Monitor Detects Power Fail at 5% or 10% Below Nominal VCC (5V) ♦ Reset Output can be used as a CPU Supervisor for a Microprocessor ♦ Industrial Temperature Range (-40°C to +85°C) ♦ UL Recognized DS2030Y/AB DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM Rev 2; 1/05 For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.

Ordering Information

Pin Configuration appears at end of data sheet. PART TEMP RANGE PIN-PACKAGE SPEED (ns) SUPPLY TOLERANCE (%) DS2030AB-70 -40°C to +85°C 256 Ball 27mm 2 BGA Module 70 5 DS2030AB-100 -40°C to +85°C 256 Ball 27mm 2 BGA Module 100 5 DS2030Y-70 -40°C to +85°C 256 Ball 27mm 2 BGA Module 70 10 DS2030Y-100 -40°C to +85°C 256 Ball 27mm 2 BGA Module 100 10 Typical Operating Circuit FROM EXTERNAL DECODE LOGIC P3.6 P3.7 PSEN P0.0–7 ALE P2.0–6 P1.5 RST A8–14 A0–7 DQ0–7 OE WE CE

7 BITS

8 BITS8 BITS

D0–7 LE Q0–7 AND (WR) (RD) (INT3) 8051 MICROPROCESSOR DS2030 32k x 8 NV SRAM

DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM ABSOLUTE MAXIMUM RATINGS RECOMMENDED OPERATING CONDITIONS (TA = -40°C to +85°C) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specificatio ns is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS DS2030AB 4.75 5.25Supply Voltage V CC DS2030Y 4.50 5.50 V Input Logic 1 V IH 2.2 VCC V Input Logic 0 V IL 0 0.8 V CAPACITANCE (TA = +25°C) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Capacitance C IN Not tested 7 pF Input/Output Capacitance C OUT Not tested 7 pF DC ELECTRICAL CHARACTERISTICS (VCC = 5V ±5% for DS2030AB, VCC = 5V ±10% for DS2030Y, TA = -40°C to +85°C.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Leakage Current I IL -1.0 +1.0 µA I/O Leakage Current I IO CE = VCC -1.0 +1.0 µA Output-Current High I OH At 2.4V -1.0 mA Output-Current Low I OL At 0.4V 2.0 mA Output-Current Low RST IOL RST At 0.4V (Note 1) 10.0 mA ICCS1 CE = 2.2V 0.5 7Standby Current ICCS2 CE = VCC - 0.5V 0.2 5 mA Operating Current I CCO1 tRC = 200ns, outputs open 85 mA V

DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM POWER-DOWN/POWER-UP TIMING (TA = -40°C to +85°C) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS VCC Fail Detect to CE and WE Inactive t PD (Note 7) 1.5 µs VCC Slew from VTP to 0V t F 150 µs VCC Slew from 0V to VTP tR 150 µs VCC Valid to CE and WE Inactive t PU 2m s VCC Valid to End of Write Protection t REC 125 ms VCC Fail Detect to RST Active t RPD (Note 1) 3.0 µs VCC Valid to RST Inactive t RPU (Note 1) 225 350 525 ms DATA RETENTION (TA = +25°C) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Expected Data-Retention Time (Per Charge) t DR (Note 8) 2 3 years AC ELECTRICAL CHARACTERISTICS (VCC = 5V ±5% for DS2030AB, VCC = 5V ±10% for DS2030Y, TA = -40°C to +85°C.) DS2030AB-70 DS2030Y-70 DS2030AB-100 DS2030Y-100PARAMETER SYMBOL CONDITIONS MIN MAX MIN MAX UNITS Read Cycle Time tRC 70 100 ns Access Time tACC 70 100 ns OE to Output Valid tOE 35 50 ns CE to Output Valid tCO 70 100 ns OE or CE to Output Active tCOE (Note 2) 5 5 ns Output High Impedance from Deselection tOD (Note 2) 25 35 ns Output Hold from Address Change tOH 55 n s Write Cycle Time tWC 70 100 ns Write Pulse Width tWP (Note 3) 55 75 ns Address Setup Time tAW 00 n s tWR1 (Note 4) 5 5Write Recovery Time tWR2 (Note 5) 15 15 ns Output High Impedance from WE tODW (Note 2) 25 35 ns Output Active from WE tOEW (Note 2) 5 5 ns Data Setup Time tDS (Note 6) 30 40 ns tDH1 (Note 4) 0 0Data Hold Time tDH2 (Note 5) 10 10 ns

DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM Read Cycle OUTPUT DATA VALID tRC tACC tCO tOE tOH tOD tODtCOE tCOE VIH VIH VIL VOH VOL VOH VOL VIL VIH ADDRESSES CE OE DOUT (SEE NOTE 9.) VIH VIH VIH VIH VIL VIL VIL

DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM Write Cycle 1 DATA IN STABLE ADDRESSES CE WE DOUT DIN tWC VIH VIH VIH VIH VIL VIL VIL HIGH IMPEDANCE VIH VIH VIL VIL VIH VIL VIL VIL VIL tAW tWP tOEW tDH1tDS tODW tWR1 (SEE NOTES 2, 3, 4, 6, 10–13.) Write Cycle 2 tWC tAW tDH2tDS tCOE tODW tWP tWR2 VIH VIL VIHADDRESSES CE WE DOUT DIN VIL VIH VIL VIH VIL VIL VIL VIL VIH VIH VIL VIH DATA IN STABLE VIL VIH VIL (SEE NOTES 2, 3, 5, 6, 10–13.)

DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM Power-Down/Power-Up Condition tDR tPU tF tPD tRPUtRPD SLEWS WITH VCC tR VOL VIH VOL tREC VCC VTP ~2.7V CE, WE RST BACKUP CURRENT SUPPLIED FROM LITHIUM BATTERY (SEE NOTES 1, 7.) Note 1: RST is an open-drain output and cannot source current. An external pullup resistor should be connected to this pin to real- ize a logic-high level. Note 2: These parameters are sampled with a 5pF load and are not 100% tested. Note 3: tWP is specified as the logical AND of CE and WE. tWP is measured from the latter of CE or WE going low to the earlier of CE or WE going high. Note 4: tWR1 and tDH1 are measured from WE going high. Note 5: tWR2 and tDH2 are measured from CE going high. Note 6: tDS is measured from the earlier of CE or WE going high. Note 7: In a power-down condition, the voltage on any pin can not exceed the voltage on VCC. Note 8: The expected tDR is defined as accumulative time in the absence of VCC starting from the time power is first applied by the user. Minimum expected data-retention time is based on a maximum of two 230°C convection solder reflow exposures, followed by a fully charged cell. Full charge occurs with the initial application of V CC for a minimum of 96 hours. This para- meter is assured by component selection, process control, and design. It is not measured directly in production testing. Note 9: WE is high for a read cycle. Note 10: OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high-impedance state. Note 11: If the CE low transition occurs simultaneously with or latter than the WE low transition, the output buffers remain in a high- impedance state during this period. Note 12: If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain in a high- impedance state during this period. Note 13: If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high-impedance state during this period. Note 14: DS2030 BGA modules are recognized by Underwriters Laboratory (UL) under file E99151.

DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM SUPPLY CURRENT vs. OPERATING FREQUENCY DS2030 toc01 VCC (V) SUPPLY CURRENT (mA) 5.55.04.5 4.0 6.0 5MHz 100% DUTY CYCLE 5MHz 50% DUTY CYCLE 1MHz 100% DUTY CYCLE 1MHz 50% DUTY CYCLE TA = +25°C SUPPLY CURRENT vs. SUPPLY VOLTAGE DS2030 toc02 VCC (V) SUPPLY CURRENT (µA) 5.55.04.5 160 170 180 190 200 210 220 230 240 250 150 4.0 6.0 TA = +25°C BATTERY CHARGER CURRENT vs. BATTERY VOLTAGE DS2030 toc03 DELTA BELOW VCHRG (V) BATTERY CHARGER CURRENT, ICHRG (mA) 0.6 0.80.40.2 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 01 . 0 VCC = CE = 5.0V VCHRG = 3.03V VCHRG PERCENT CHANGE vs. TEMPERATURE DS2030 toc04 TEMPERATURE (°C) VCHRG PERCENT CHANGE FROM +25°C (%) 807050 60-10 0 10 20 30 40-30 -20 -0.4 -0.3 -0.2 -0.1 0.1 0.2 0.3 0.4 0.5 -0.5 -40 VCC = 5.0V VBAT = VCHRG VTP vs. TEMPERATURE DS2030 toc05 TEMPERATURE (°C) WRITE PROTECT, VTP (V) 806020 400-20 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 4.70 4.75 4.25 -40 DS2030AB DS2030Y DQ VOH vs. DQ IOH DS2030 toc06 IOH (mA) VOH (V) -1-2-3-4 3.7 3.9 4.1 4.3 4.5 4.7 4.9 3.5 -5 0 VCC = 4.5V DQ VOL vs. DQ IOL DS2030 toc07 IOL (mA) VOL (V) 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0 5.0 VCC = 4.5V RST OUTPUT-VOLTAGE LOW vs. OUTPUT-CURRENT LOW DS2030 toc08 IOL (mA) VOL (V) 15105 0.1 0.2 0.3 0.4 0.5 02 0 VCC = 4.25V RST VOLTAGE vs. VCC DURING POWER-UP DS2030 toc09 VCC POWER-UP (V) RST VOLTAGE W/PULLUP RESISTOR (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 05 . 5 DS2030AB TA = +25°C Typical Operating Characteristics (VCC = +5.0V, TA = +25°C, unless otherwise noted.)

DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM BALLS NAME DESCRIPTION A1, A2, A3, A4 GND Ground B1, B2, B3, B4 N.C. No Connection C1, C2, C3, C4 N.C. No Connection D1, D2, D3, D4 N.C. No Connection E1, E2, E3, E4 RST Open-Drain Reset Output F1, F2, F3, F4 V CC Supply Voltage G1, G2, G3, G4 WE Write Enable Input H1, H2, H3, H4 OE Output Enable Input J1, J2, J3, J4 CE Chip Enable Input K1, K2, K3, K4 DQ7 Data Input/Output 7 L1, L2, L3, L4 DQ6 Data Input/Output 6 M1, M2, M3, M4 DQ5 Data Input/Output 5 N1, N2, N3, N4 DQ4 Data Input/Output 4 P1, P2, P3, P4 DQ3 Data Input/Output 3 R1, R2, R3, R4 DQ2 Data Input/Output 2 T1, T2, T3, T4 DQ1 Data Input/Output 1 U1, U2, U3, U4 DQ0 Data Input/Output 0 V1, V2, V3, V4 GND Ground W1, W2, W3, W4 GND Ground Y1, Y2, Y3, Y4 GND Ground A17, A18, A19, A20 GND Ground B17, B18, B19, B20 N.C. No Connection C17, C18, C19, C20 N.C. No Connection D17, D18, D19, D20 A14 Address Input 14 E17, E18, E19, E20 A13 Address Input 13 F17, F18, F19, F20 A12 Address Input 12 G17, G18, G19, G20 A11 Address Input 11 H17, H18, H19, H20 A10 Address Input 10 J17, J18, J19, J20 A9 Address Input 9 K17, K18, K19, K20 A8 Address Input 8 L17, L18, L19, L20 A7 Address Input 7 M17, M18, M19, M20 A6 Address Input 6 BALLS NAME DESCRIPTION N17, N18, N19, N20 A5 Address Input 5 P17, P18, P19, P20 A4 Address Input 4 R17, R18, R19, R20 A3 Address Input 3 T17, T18, T19, T20 A2 Address Input 2 U17, U18, U19, U20 A1 Address Input 1 V17, V18, V19, V20 A0 Address Input 0 W17, W18, W19, W20 GND Ground Y17, Y18, Y19, Y20 GND Ground A5, B5, C5, D5 N.C. No Connection A6, B6, C6, D6 N.C. No Connection A7, B7, C7, D7 N.C. No Connection A8, B8, C8, D8 N.C. No Connection A9, B9, C9, D9 N.C. No Connection A10, B10, C10, D10 N.C. No Connection A11, B11, C11, D11 N.C. No Connection A12, B12, C12, D12 N.C. No Connection A13, B13, C13, D13 N.C. No Connection A14, B14, C14, D14 N.C. No Connection A15, B15, C15, D15 N.C. No Connection A16, B16, C16, D16 N.C. No Connection U5, V5, W5, Y5 N.C. No Connection U6, V6, W6, Y6 N.C. No Connection U7, V7, W7, Y7 N.C. No Connection U8, V8, W8, Y8 N.C. No Connection U9, V9, W9, Y9 N.C. No Connection U10, V10, W10, Y10 N.C. No Connection U11, V11, W11, Y11 N.C. No Connection U12, V12, W12, Y12 N.C. No Connection U13, V13, W13, Y13 N.C. No Connection U14, V14, W14, Y14 N.C. No Connection U15, V15, W15, Y15 N.C. No Connection U16, V16, W16, Y16 N.C. No Connection Pin Description

DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM Functional Diagram CURRENT-LIMITING RESISTOR BATTERY-CHARGING/SHORTING PROTECTION CIRCUITRY (UL RECOGNIZED) REDUNDANT LOGIC DELAY TIMING CIRCUITRY CHARGER CURRENT-LIMITING RESISTOR VTP REF VSW REF GND ML CE RST CE REDUNDANT SERIES FET SRAM DQ0–7OE WE VCC VCC UNINTERRUPTED POWER SUPPLY FOR THE SRAM DS2030 OE WE A0–A14 Detailed Description The DS2030 is a 256kb (32kb x 8 bits) fully static, NV memory similar in function and organization to the DS1230 NV SRAM, but containing a rechargeable ML battery. The DS2030 NV SRAM constantly monitors V CC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. There is no limit to the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing. This device can be used in place of SRAM, EEPROM, or flash components. The DS2030 assembly consists of a low-power SRAM, an ML battery, and an NV controller with a battery charg- er, integrated on a standard 256-ball, 27mm

2 BGA sub-

strate. Unlike other surface-mount NV memory modules that require the battery to be removable for soldering, the internal ML battery can tolerate exposure to con- vection reflow soldering temperatures allowing this sin- gle-piece component to be handled with standard BGA assembly techniques. Two versions of the DS2030 are available that provide either a 5% (DS2030AB) or 10% (DS2030Y) power-moni- toring trip point. The DS2030 also contains a power-sup- ply monitor output, RST, which can be used as a CPU supervisor for a microprocessor.

The DS2030 executes a read cycle whenever WE (write enable) is inactive (high) and CE (chip enable) is active (low). The unique address specified by the 15 address inputs (A0 to A14) defines which of the 32,768 bytes of data is to be accessed. Valid data will be available to the eight data output drivers within t ACC (access time) after the last address input signal is stable, providing that CE and OE (output enable) access times are also satisfied. If CE and OE access times are not satisfied, then data access must be measured from the later occurring sig- nal (CE or OE) and the limiting parameter is either t CO for CE or tOE for OE rather than address access. Write Mode The DS2030 executes a write cycle whenever the CE and WE signals are active (low) after address inputs are stable. The later-occurring falling edge of CE or WE will determine the start of the write cycle. The write cycle is terminated by the earlier rising edge of CE or WE. All address inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time (t WR) before another cycle can be initiated. The OE control signal should be kept inac- tive (high) during write cycles to avoid bus contention. However, if the output drivers have been enabled ( CE and OE active) then WE will disable the outputs in t ODW from its falling edge. Data-Retention Mode The DS2030AB provides full functional capability for VCC greater than 4.75V and write-protects at 4.5V. The DS2030Y provides full functional capability for V CC greater than 4.5V and write-protects at 4.25V. Data is maintained in the absence of V CC without additional support circuitry. The NV static RAM constantly moni- tors V CC. Should the supply voltage decay, the NV SRAM automatically write-protects itself. All inputs become “don’t care”, and all data outputs become high impedance. As V CC falls below approximately 2.7V (VSW), the power-switching circuit connects the lithium energy source to the RAM to retain data. During power- up, when V CC rises above V SW, the power-switching circuit connects external V CC to the RAM and discon- nects the lithium energy source. Normal RAM operation can resume after V CC exceeds V TP for a minimum duration of tREC. Battery Charging When V CC is greater than V TP, an internal regulator charges the battery. The UL-approved charger circuit includes short-circuit protection and a temperature-sta- bilized voltage reference for on-demand charging of the internal battery. Typical data-retention expectations of 3 years per charge cycle are achievable. A maximum of 96 hours of charging time is required to fully charge a depleted battery. System Power Monitoring When the external V CC supply falls below the selected out-of-tolerance trip point, the output RST is forced active (low). Once active, the RST is held active until the VCC supply has fallen below that of the internal bat- tery. On power-up, the RST output is held active until the external supply is greater than the selected trip point and one reset timeout period (t RPU) has elapsed. This is sufficiently longer than t REC to ensure that the SRAM is ready for access by the microprocessor. Freshness Seal and Shipping The DS2030 is shipped from Dallas Semiconductor with the lithium battery electrically disconnected, guarantee- ing that no battery capacity has been consumed during transit or storage. As shipped, the lithium battery is ~60% charged, and no preassembly charging opera- tions should be attempted. When V CC is first applied at a level greater than V TP, the lithium battery is enabled for backup operation. A 96 hour initial battery charge time is recommended for new system installations. DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM Memory Operation Truth Table X = Don’t care. WE CE OE MODE I CC OUTPUTS

100 Read Active Active

101 Read Active High Impedance

00 XW rite Active High Impedance

X1 X Standby Standby High Impedance

Recommended Cleaning Procedures The DS2030 may be cleaned using aqueous-based cleaning solutions. No special precautions are needed when cleaning boards containing a DS2030 module. Removal of the topside label violates the environmen- tal integrity of the package and voids the warranty of the product. Applications Information Power-Supply Decoupling To achieve the best results when using the DS2030, decouple the power supply with a 0.1µF capacitor. Use a high-quality, ceramic surface-mount capacitor if pos- sible. Surface-mount components minimize lead induc- tance, which improves performance, while ceramic capacitors have adequately high frequency response for decoupling applications. Using the Open-Drain RST Output The RST output is open drain, and therefore requires a pullup resistor to realize a high logic output level. Pullup resistor values between 1kΩ and 10kΩ are typical. Battery Charging/Lifetime The DS2030 charges an ML battery to maximum capacity in approximately 96 hours of operation when V CC is greater than V TP. Once the battery is charged, its lifetime depends primarily on the V CC duty cycle. The DS2030 can maintain data from a single, initial charge for up to 3 years. Once recharged, this deep- discharge cycle can be repeated up to 20 times, pro- ducing a worst-case service life of 60 years. More typical duty cycles are of shorter duration, enabling the DS2030 to be charged hundreds of times, therefore extending the service life well beyond 60 years. DS2030Y/AB DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM Note: All temperatures refer to top side of the package, mea- sured on the package body surface. PROFILE FEATURE Sn-Pb EUTECTIC ASSEMBLY Average ramp-up rate L to TP) 3°C/second max Preheat - Temperature min (TSmin) - Temperature max (TSmax) - Time (min to max) (ts) 100°C 150°C 60 to 120 seconds TSmax to TL - Ramp-up rate Time maintained above: - Temperature (TL) - Time (tL) 183°C 60 to 150 seconds Peak temperature (TP) 225 +0/-5°C Time within 5°C of actual peak temperature (TP) 10 to 30 seconds Ramp-down rate 6 °C/second max Time 25°C to peak temperature 6 minutes max Recommended Reflow Temperature Profile

DS2030Y/AB Single-Piece 256kb Nonvolatile SRAM Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circu it patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. 12 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 © 2005 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products. is a registered trademark of Dallas Semiconductor Corporation.

Package Information

For the latest package outline information, go to www.maxim-ic.com/DallasPackInfo. Pin Configuration A 12 34 789 05 6 7 8 90 1 2 34 56 1 2 34 1 1 1 25 678 9 1 1 1 1 1 1 1 11 1 21 1 1 11 1 1 7 8 9 00 1 2 3 4 5 6 DS2030 B C D E F G H J K L M N P R T U V W Y A B C D E F G H J K L M N P R T U V W Y TOP VIEW GND N.C. N.C. N.C. RST VCC WE OE CE DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1 DQ0 GND GND GND GND N.C. N.C. A14 A13 A12 A11 A10 GND GND N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C. N.C.