DS2016

DS2016 MAXIM | Alldatasheet

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Technical content

FEATURES

/g167/g32Low-power CMOS design /g167/g32Standby current /g45/g3250nA max at tA = +25°C VCC = 3.0V /g45/g32100nA max at tA = +25°C VCC = 5.5V /g45/g321µA max at tA = +60°C VCC = 5.5V /g167/g32Full operation for VCC = 5.5V to 2.7V /g167/g32Data retention voltage = 5.5V to 2.0V /g167/g32Fast 5V access time /g45/g32DS2016-100 100ns /g167/g32Reduced-speed 3V access time /g45/g32DS2016-100 250ns /g167/g32Operating temperature range of -40°C to +85°C /g167/g32Full static operation /g167/g32TTL compatible inputs and outputs over voltage range of 5.5V to 2.7V /g167/g32Available in 24-pin DIP and 24-pin SO packages /g167/g32Suitable for both battery operated and battery backup applications PIN ASSIGNMENT PIN DESCRIPTION A0 to A10 - Address Inputs DQ0 to DQ7 - Data Input/Output CE - Chip Enable Input WE - Write Enable Input OE - Output Enable Input VCC - Power Supply Input 2.7V - 5.5V GND - Ground

DESCRIPTION

The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single power supply with a voltage input between 2.7V and 5.5V. The chip enable input ( CE ) is used for device selection and can be used in order to achieve the minimum standby current mode, which facilitates both battery operated and battery backup applications. The device provides access times as fast as 100ns when operated from a 5V power supply input and also pr ovides relatively good performance of 250ns access while operating from a 3V input. The device main tains TTL-level inputs and outputs over the input voltage range of 2.7V to 5.5V. The DS2016 is most su itable for low-power applications where battery operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8 SRAM and is pin-compatible with ROM and EPROM of similar density. DS2016 2k x 8 3V/5V Operation Static RAM www.maxim-ic.com 12 13 V CC WE OE A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 DQ0 DQ1 DQ2 GND DS2016 24-Pin DIP (600mil) DS2016R 24-Pin SO (300mil)

MODE CE OE WE A0-A10 DQ-DQ7 POWER READ L L H STABLE DATA OUT I CCO WRITE L X L STABLE DATA IN I CCO DESELECT L H H X HIGH-Z I CCO STANDBY H X X X HIGH-Z I CCS ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER RATING VCC Power Supply Voltage -0.3V to +7.0V VIN , VI/O Input, Input/Output Voltage -0.3 to V CC +0.3V TSTG Storage Temperature -55°C to +125°C TOPR Operating Temperature -40°C to +85°C TSOLDER Soldering Temperature/Time IPC/JEDEC J-STD-020 CAPACITANCE (T A= +25°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Input Capacitance C IN 5 10 pF Input/Output Capacitance C I/O 5 12 pF +5-VOLT OPERATION RECOMMENDED DC OPERATING CONDITIONS (T A= -40°C to +85°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Power Supply Voltage V CC 4.5 5.0 5.5 V Input High Voltage V IH 2.0 V CC + 0.3 V Input Low Voltage V IL -0.3 0.8 V Data Retention Voltage V DR 2.0 5.5 V DC CHARACTERISTICS (T A= -40°C to +85°C; VCC = 5V ±10%) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Leakage Current I IL 0V /g163 VIN /g163 VCC /g1770.1 µA I/O Leakage Current I LO CE = VIH, 0V /g163 VIO /g163 VCC /g1770.5 µA Output High Current I OH V OH = 2.4V -1.0 mA Output Low Current I OL V OL = 0.4V 4.0 mA Standby Current I CCS1 CE = 2.0V 0.3 mA Standby Current I CCS2 CE /g179 VCC - 0.5V, tA = +60°C 1 µA Standby Current I CCS2 CE /g179 VCC - 0.5V, tA = +25°C 100 nA Operating Current I CCO CE = 0.8V, 200ns cycle 55 mA

AC CHARACTERISTICS READ CYCLE (T A= -40°C to +85°C; VCC = 5V ±10%) DS2016-100 PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Read Cycle Time t RC 100 ns Access Time t ACC 100 ns OE to Output Valid tOE 50 ns CE to Output Valid tCO 100 ns CE or OE to Output Active tCOE 5 ns Output High-Z from Deselection tOD 5 35 ns Output Hold from Address Change tOH 5 ns AC CHARACTERISTICS WRITE CYCLE (T A= -40°C to +85°C; VCC = 5V ±10%) DS2016-100 PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Write Cycle Time t WC 100 ns Write Pulse Width t WP 75 ns Address Setup Time t AW 0 ns Write Recovery Time tWR 10 ns Output High-Z from WE tODW 35 ns Output Active from WE tOEW 5 ns Data Setup Time t DS 40 ns Data Hold Time t DH 0 ns DATA RETENTION CHARACTERISTICS (T A = -40°C to +85°C) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Data Retention Supply Voltage VDR CE /g179 VCC - 0.5V 2.0 5.5 V Data Retention Current at 5.5V ICCR1 CE /g179 VCC - 0.5V 0.1* 1 µA Data Retention Current at 2.0V ICCR2 CE /g179 VCC - 0.5V 50* 750 nA Chip Deselect to Data Retention tCDR 0 µs Recovery Time t R 2 ms * Typical values are at +25°C

+3-VOLT OPERATION RECOMMENDED DC OPERATING CONDITIONS (T A = -40°C to +85°C) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Power Supply Voltage V CC 2.7 3.0 3.5 V Input High Voltage V IH 2.0 V CC + 0.3 V Input Low Voltage V IL -0.3 0.6 V Data Retention Voltage V DR 2.0 3.5 V DC CHARACTERISTICS (T A = -40°C to +85°C; VCC = 2.7V to 3.5V) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Input Leakage Current I IL 0V /g163 VIN /g163 VCC ±0.1 µA I/O Leakage Current I LO CE = VIH, 0V /g163 VIO /g163 VCC ±0.5 µA Output High Current I OH V OH = 2.2V -0.5 mA Output Low Current I OL V OL = 0.4V 4.0 mA Standby Current I CCS1 CE = 2.0V 0.1 mA Standby Current I CCS2 CE /g179 VCC - 0.3V, TA = +60°C 500 nA Standby Current I CCS2 CE /g179 VCC - 0.3V, TA = +25°C 50 nA Operating Current I CCO CE = 0.6V min cycle 25 mA AC CHARACTERISTICS READ CYCLE (T A = -40°C to +85°C; VCC = 2.7V to 3.5V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Read Cycle Time t RC 250 ns Access Time t ACC 250 ns OE to Output Valid tOE 120 ns CE to Output Valid tCO 250 ns CE or OE to Output Active tCOE 15 ns Output High-Z from Deselection tOD 5 100 ns Output Hold from Address Change tOH 15 ns

AC CHARACTERISTICS WRITE CYCLE (T A = -40°C to +85°C; VCC = 2.7V to 3.5V) PARAMETER SYMBOL MIN TYP MAX UNITS NOTES Write Cycle Time t WC 250 ns Write Pulse Width t WP 190 ns Address Setup Time t AW 0 ns Write Recovery Time t WR 25 ns Output High-Z from WE tODW 90 ns Output Active from WE tOEW 5 ns Data Setup Time t DS 100 ns Data Hold Time t DH 0 ns DATA RETENTION CHARACTERISTICS (T A = -40°C to +85°C) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Data Retention Supply Voltage VDR CE /g179 VCC - 0.3V 2.0 3.5 V Data Retention Current at 3.5V ICCR1 CE /g179 VCC - 0.3V 50* 1000 nA Data Retention Current at 2.0V ICCR2 CE /g179 VCC - 0.3V 50* 750 nA Chip Deselect to Data Retention tCDR 0 µs Recovery Time t R 2 ms * Typical values are at +25°C TIMING DIAGRAM: READ CYCLE SEE NOTE 1

TIMING DIAGRAM: WRITE CYCLE 1 SEE NOTES 2, 3, 4, 5, 6, AND 7 TIMING DIAGRAM: WRITE CYCLE 2 SEE NOTES 2, 3, 4, 5, 6, AND 7

TIMING DIAGRAM: DATA RETENTION - POWER-UP, POWER-DOWN Figure 1 SEE NOTE 8 NOTES: 1) WE is high for read cycles. 2) OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high impedance state. 3) t WP is specified as the logical AND of CE and WE . tWP is measured from the latter of CE or WE going low to the earlier of CE or WE going high. 4) t DH and tDS are measured from the earlier of CE or WE going high. 5) If the CE low transition occurs simultaneously with or later than the WE low transition, the output buffers remain in a high impedance state. 6) If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain in a high impedance state. 7) If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high impedance state. 8) If the V IH level of CE is 2.0V during the period that V CC voltage is going down from 4.5V to 2.7V, ICCS1 current flows. 9) The DS2016 maintains full operation from 5.5V to 2.7V. The electrical characteristics tables show two tested and guaranteed points of operation. For operation between 4.5V and 3.5V, use the composite worst case characteristics from both 5V and 3V operation for design purposes. DC TEST CONDITIONS Outputs Open All voltages are referenced to ground. AC TEST CONDITIONS Output Load: 100pF + 1TTL Gate Input Pulse Levels: 0V - 3.0V Timing Measurement Reference Levels Input: 1.5V Output: 1.5V Input Pulse Rise and Fall Times: 5ns

PACKAGE INFORMATION

For the latest package outline information, go to www.maxim-ic.com/DallasPackInfo.