DS2004TN

DS2004 NSC | Alldatasheet

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Y Seven high gain Darlington pairs Y High output voltage (V CE e 50V) Y High output current (I C e 350 mA) Y TTL, PMOS, CMOS compatible Y Suppression diodes for inductive loads Y Extended temperature range Connection Diagram 16-Lead DIP TL/F/9647–1 Top View Order Numbers J Package N Package M Package Number Number Number J16A N16E M16A DS2003 DS2003MJ DS2003TN DS2003TM DS9667 DS2003TJ DS2003CN DS2003CM DS2003CJ DS9667TN DS9667MJ DS9667CN DS9667TJ DS9667CJ DS2004 DS2004MJ DS2004TN DS2004TM DS2004TJ DS2004CN DS2004CM DS2004CJ C1996 National Semiconductor Corporation RRD-B30M66/Printed in U. S. A.

Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Storage Temperature Range Ceramic DIP b65§Ct o a175§C Molded DIP b65§Ct o a150§C Operating Temperature Range DS2003M/DS9667M b55§Ct o a125§C DS2004M b55§Ct o a125§C DS2003T/DS9667T b40§Ct o a105§C DS2004T b40§Ct o a105§C DS2003C/DS9667C 0 §Ct o a85§C DS2004C 0 §Ct o a85§C Lead Temperature Ceramic DIP (Soldering, 60 seconds) 300 §C Molded DIP (Soldering, 10 seconds) 265 §C Maximum Power Dissipation * at 25 §C Cavity Package 2016 mW Molded Package 1838 mW S.O. Package 926 mW *Derate cavity package 16.13 mW/ §C above 25 §C; derate molded DIP pack- Input Voltage 30V Output Voltage 55V Emitter-Base Voltage 6.0V Continuous Collector Current 500 mA Continuous Base Current 25 mA Electrical Characteristics TA e 25§C, unless otherwise specified (Note 2) Symbol Parameter Conditions Min Typ Max Units ICEX Output Leakage T A e 25§C, V CE e 50V (Figure 1a) 20 Current TA e 85§C, V CE e 50V (Figure 1a) for Commercial Grade 100 mA TA e 25§C, V CE e 50V, V I e 1.0V (Figure 1b) DS2004 500 VCE(Sat) Collector-Emitter I C e 350 mA, I B e 500 mA (Figure 2) (Note 3) 1.25 1.6 Saturation Voltage IC e 200 mA, I B e 350 mA (Figure 2) 1.1 1.3 V IC e 100 mA, I B e 250 mA (Figure 2) 0.9 1.1 II(ON) Input Current V I e 3.85V (Figure 3) DS2003/DS9667 0.93 1.35 mA VI e 5.0V (Figure 3) DS2004 0.35 0.5 VI e 12V (Figure 3) 1.0 1.45 II(OFF) Input Current T A e 85§C for Commercial 50 100 mA(Note 4) I C e 500 mA (Figure 4) VI(ON) Input Voltage V CE e 2.0V, I C e 200 mA (Figure 5) DS2003/DS9667 2.4 (Note 5) VCE e 2.0V, I C e 250 mA (Figure 5) 2.7 VCE e 2.0V, I C e 300 mA (Figure 5) 3.0 V VCE e 2.0V, I C e 125 mA (Figure 5) DS2004 5.0 VCE e 2.0V, I C e 200 mA (Figure 5) 6.0 VCE e 2.0V, I C e 275 mA (Figure 5) 7.0 VCE e 2.0V, I C e 350 mA (Figure 5) 8.0 CI Input Capacitance 15 30 pF tPLH Turn-On Delay 0.5 V I to 0.5 V O 1.0 ms tPHL Turn-Off Delay 0.5 V I to 0.5 V O 1.0 ms IR Clamp Diode V R e 50V (Figure 6) TA e 25§C5 0 mA Leakage Current T A e 85§C 100 mA VF Clamp Diode I F e 350 mA (Figure 7) 1.7 2.0 V Forward Voltage Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The tables of ‘‘Electrical Characteristics’’ provide conditions for actual device operation. Note 2: All limits apply to the complete Darlington series except as specified for a single device type. Note 3: Under normal operating conditions these units will sustain 350 mA per output with V CE (Sat) e 1.6V at 70 §C with a pulse width of 20 ms and a duty cycle of 30%. Note 4: The I I(OFF) current limit guaranteed against partial turn-on of the output. Note 5: The V I(ON) voltage limit guarantees a minimum output sink current per the specified test conditions. http:/ /www.national.com 2

Typical Performance Characteristics Saturation Voltage Collector Current vs Input Current Collector Current vs Input Voltage Input Current vs DS2003/DS9667 Input Voltage Input Current vs DS2004 Outputs (Molded Package) Duty Cycle and Number of Peak Collector Current vs Outputs (Ceramic Package) Duty Cycle and Number of Peak Collector Current vs TL/F/9647–6 http:/ /www.national.com3

Buffer for Higher Current Loads TL/F/9647–16 TL/F/9647–17 http:/ /www.national.com5

http:/ /www.national.com 6

Physical Dimensions inches (millimeters) unless otherwise noted Ceramic Dual-In-Line Package (J) Order Number DS2003CJ, DS9667CJ, DS2003MJ, D9667MJ, DS2003TJ, DS9667TJ, DS2004CJ, DS2004MJ or DS2004TJ Surface Mount Package (M) Order Number DS2003CM, DS9667CM, DS2003TM, DS9667TM, DS2004CM or DS2004TM http:/ /www.national.com7

DS2003/DS9667/DS2004 High Current/Voltage Darlington Drivers Physical Dimensions inches (millimeters) unless otherwise noted (Continued) Molded Dual-In-Line Package (N) Order Number DS2003CN, DS9667CN, DS2003TN, DS9667TN, DS2004CN or DS2004TN LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant support device or system whose failure to perform can into the body, or (b) support or sustain life, and whose be reasonably expected to cause the failure of the life failure to perform, when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can effectiveness. be reasonably expected to result in a significant injury to the user. National Semiconductor National Semiconductor National Semiconductor National Semiconductor Corporation Europe Hong Kong Ltd. Japan Ltd.

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