DS2003 NSC | Alldatasheet
Document overview
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Technical content
Features
n Seven high gain Darlington pairs n High output voltage (VCE = 50V) n High output current (IC = 350 mA) n TTL, PMOS, CMOS compatible n Suppression diodes for inductive loads n Extended temperature range Connection Diagram Order Numbers N Package Number N16E M Package Number M16A DS2003TN DS2003TM DS2003CN DS2003CM 16-Lead DIP DS009647-1 Top View January 2000 DS2003 High Current/Voltage Darlington Drivers © 2000 National Semiconductor Corporation DS009647 www.national.com
Absolute Maximum Ratings(Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Storage Temperature Range −65˚C to +150˚C Operating Temperature Range DS2003TN, DS2003TM −40˚C to +105˚C DS2003CN, DS2003CM 0˚C to +85˚C Lead Temperature Soldering, 10 seconds 265˚C Maximum Power Dissipation * at TA = 25˚C Input Voltage 30V Output Voltage 55V Emitter-Base Voltage 6.0V Continuous Collector Current 500 mA Continuous Base Current 25 mA Note:*Derate N16E package 13.3 mW/˚C for TA above 25˚C. Derate M16A package 7.7 mW/˚C for TA above 25˚C.
Electrical Characteristics
TA = 25˚C, unless otherwise specified (Note 2) Symbol Parameter Conditions Min Typ Max Units ICEX Output Leakage Current TA = 25˚C, VCE = 50V (Figure 1 ) 20 TA = 85˚C, VCE = 50V (Figure 1 )for DS2003CN, DS2003CM 100 µA TA = 105˚C, VCE = 50V (Figure 1 )for DS2003TN, DS2003TM 150 VCE(Sat) Collector-Emitter Saturation Voltage IC = 350 mA, IB = 500 µA (Figure 3 )(Note 3) 1.25 1.6 VIC = 200 mA, IB = 350 µA (Figure 3 ) 1.1 1.3 IC = 100 mA, IB = 250 µA (Figure 3 ) 0.9 1.1 II(ON) Input Current V I = 3.85V (Figure 4 ) 0.93 1.35 mA II(OFF) Input Current (Note 4) TA = 85˚C for DS2003CN, DS2003CM IC = 500 µA (Figure 5 ) 50 100 µA VI(ON) Input Voltage (Note 5) VCE = 2.0V, IC = 200 mA (Figure 6 ) 2.4 VVCE = 2.0V, IC = 250 mA (Figure 6 ) 2.7 VCE = 2.0V, IC = 300 mA (Figure 6 ) 3.0 C I Input Capacitance 15 30 pF tPLH Turn-On Delay 0.5 V I to 0.5 VO 1.0 µs tPHL Turn-Off Delay 0.5 V I to 0.5 VO 1.0 µs IR Clamp Diode Leakage Current VR = 50V (Figure 7 )TA = 25˚C 50 µA TA = 85˚C 100 µA VF Clamp Diode Forward Voltage IF = 350 mA (Figure 8 ) 1.7 2.0 V Note 1:“Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The tables of “Electrical Characteristics” provide conditions for actual device operation. Note 2:All limits apply to the complete Darlington series except as specified for a single device type. Note 3:Under normal operating conditions these units will sustain 350 mA per output with VCE (Sat)= 1.6V at 70˚C with a pulse width of 20 ms and a duty cycle of 30% . Note 4:The II(OFF)current limit guaranteed against partial turn-on of the output. Note 5:The VI(ON)voltage limit guarantees a minimum output sink current per the specified test conditions. DS2003 www.national.com 2
Typical Performance Characteristics Equivalent Circuits Collector Current vs Saturation Voltage DS009647-18 Collector Current vs Input Current DS009647-19 Input Current vs Input Voltage DS009647-20 Peak Collector Current vs Duty Cycle and Number of Outputs (Molded Package) DS009647-22 Peak Collector Current vs Duty Cycle and Number of Outputs (Ceramic Package) DS009647-23 DS009647-3 DS2003 www.national.com3
Physical Dimensionsinches (millimeters) unless otherwise noted Surface Mount Package (M) Order Number DS2003CM, DS2003TM Molded Dual-In-Line Package (N) Order Number DS2003CN, DS2003TN DS2003 www.national.com5
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. National Semiconductor Corporation Americas Tel: 1-800-272-9959 Fax: 1-800-737-7018 Email: support@nsc.com National Semiconductor Europe Fax: +49 (0) 1 80-530 85 86 Email: europe.support@nsc.com Deutsch Tel: +49 (0) 1 80-530 85 85 English Tel: +49 (0) 1 80-532 78 32 Français Tel: +49 (0) 1 80-532 93 58 Italiano Tel: +49 (0) 1 80-534 16 80 National Semiconductor Asia Pacific Customer Response Group Tel: 65-2544466 Fax: 65-2504466 Email: sea.support@nsc.com National Semiconductor Japan Ltd. Tel: 81-3-5639-7560 Fax: 81-3-5639-7507 www.national.com DS2003 High Current/Voltage Darlington Drivers National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.